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PLASTIC/EPOXY RF & Microwave Amplifiers 412

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
BGD702N,112 by NXP Semiconductors

BGD702N,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD704,112 by NXP Semiconductors

BGD704,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD714,112 by NXP Semiconductors

BGD714,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 410 mA; Gain: 20.8 dB; Maximum Operating Frequency: 750 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.8 dB

e4

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

Gold (Au)

BGD802,112 by NXP Semiconductors

BGD802,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Temperature: -20 Cel; Maximum Operating Frequency: 860 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD804,112 by NXP Semiconductors

BGD804,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; JESD-609 Code: e4; Maximum Operating Frequency: 860 MHz; Characteristic Impedance: 75 ohm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

e4

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

Gold (Au)

BGD812,112 by NXP Semiconductors

BGD812,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

19 dB

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD814,112 by NXP Semiconductors

BGD814,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.5 dB

21.25 dBm

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

410 mA

HYBRID

BGD885,112 by NXP Semiconductors

BGD885,112

NXP Semiconductors

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Gain: 16.5 dB; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Equivalence Code: SOT-115D;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

16.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115D

24

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

450 mA

HYBRID

BGD902,112 by NXP Semiconductors

BGD902,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Power Supplies (V): 24; Maximum Supply Current: 435 mA;

LOW NOISE

75 ohm

COMPONENT

18.2 dB

16.25 dBm

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

BGD904,112 by NXP Semiconductors

BGD904,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Terminal Finish: Gold (Au); Maximum Input Power (CW): 21.25 dBm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.5 dB

21.25 dBm

e4

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGD906,112 by NXP Semiconductors

BGD906,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Terminal Finish: Gold (Au); JESD-609 Code: e4; Construction: MODULE;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

22 dB

e4

900 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

435 mA

HYBRID

Gold (Au)

BGE788,112 by NXP Semiconductors

BGE788,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 750 MHz; Power Supplies (V): 24; Minimum Operating Temperature: -20 Cel;

LOW NOISE

75 ohm

MODULE

34 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

320 mA

HYBRID

BGE885,112 by NXP Semiconductors

BGE885,112

NXP Semiconductors

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Construction: MODULE; Minimum Operating Frequency: 40 MHz;

LOW NOISE

75 ohm

MODULE

16.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115D

24

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGF802-20,127 by NXP Semiconductors

BGF802-20,127

NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 869 MHz; Construction: COMPONENT; Minimum Operating Temperature: -20 Cel;

50 ohm

COMPONENT

28 dB

20 dBm

1

894 MHz

869 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

FLNG,1.6"H.SPACE

26

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

320 mA

HYBRID

2

BGR269,112 by NXP Semiconductors

BGR269,112

NXP Semiconductors

The NXP Semiconductors BGR269,112 is a wide band high power RF amplifier module with 35 dB gain. Operating from 5 MHz to 200 MHz, it requires a 24V power supply and draws a max current of 175 mA. Ideal for applications requiring high-power amplification in the RF and microwave domain.

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

35 dB

1

200 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

175 mA

HYBRID

BGS67A,112 by NXP Semiconductors

BGS67A,112

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Operating Frequency: 65 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

COMPONENT

25 dB

SURFACE MOUNT

1

8

65 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

DILCC8,.46

12

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

95 mA

BGY1085A,112 by NXP Semiconductors

BGY1085A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 240 mA; Maximum Operating Temperature: 100 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

1000 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY585A,112 by NXP Semiconductors

BGY585A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 550 MHz; Maximum Supply Current: 240 mA; Package Equivalence Code: SOT-115J;

LOW NOISE

75 ohm

MODULE

18.8 dB

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY588N,112 by NXP Semiconductors

BGY588N,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Temperature: 100 Cel; Construction: MODULE; Maximum Operating Frequency: 550 MHz;

LOW NOISE

75 ohm

MODULE

35 dB

550 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

BGY66B,112 by NXP Semiconductors

BGY66B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Input Power (CW): 16.25 dBm;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

24.5 dB

16.25 dBm

120 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

135 mA

HYBRID

BGY67A,112 by NXP Semiconductors

BGY67A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Input Power (CW): 16.25 dBm; Package Equivalence Code: SOT-115J; Additional Features: LOW NOISE;

LOW NOISE

75 ohm

MODULE

23.5 dB

16.25 dBm

200 MHz

5 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

230 mA

HYBRID

BGY68,112 by NXP Semiconductors

BGY68,112

NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Maximum Supply Current: 135 mA; Maximum Operating Frequency: 75 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

29.2 dB

6.25 dBm

75 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

135 mA

HYBRID

BGY785A,112 by NXP Semiconductors

BGY785A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Characteristic Impedance: 75 ohm; Minimum Operating Temperature: -20 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY787,112 by NXP Semiconductors

BGY787,112

NXP Semiconductors

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Package Equivalence Code: SOT-115J; Minimum Operating Temperature: -20 Cel;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

21.5 dB

750 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY883,112 by NXP Semiconductors

BGY883,112

NXP Semiconductors

WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Minimum Operating Temperature: -20 Cel; Power Supplies (V): 24;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

15 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

235 mA

HYBRID

BGY885A,112 by NXP Semiconductors

BGY885A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel; Maximum Supply Current: 240 mA;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

18.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

BGY885B,112 by NXP Semiconductors

BGY885B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 235 mA; Characteristic Impedance: 75 ohm; Terminal Finish: Gold (Au);

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20 dB

e4

1

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

235 mA

HYBRID

Gold (Au)

BGY887,112 by NXP Semiconductors

BGY887,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Supply Current: 235 mA; Package Equivalence Code: SOT-115J;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

21.5 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

235 mA

HYBRID

BGY887B,112 by NXP Semiconductors

BGY887B,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Characteristic Impedance: 75 ohm; Maximum Operating Frequency: 860 MHz;

LOW NOISE

75 ohm

MODULE

29 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

BGY888,112 by NXP Semiconductors

BGY888,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Maximum Supply Current: 340 mA; Maximum Operating Frequency: 860 MHz;

LOW NOISE

75 ohm

MODULE

34 dB

860 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

340 mA

HYBRID

CGD914,112 by NXP Semiconductors

CGD914,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; JESD-609 Code: e4; Package Equivalence Code: SOT-115J; Power Supplies (V): 24;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

20.2 dB

19.75 dBm

e4

1

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

375 mA

HYBRID

Gold (Au)

CGD923,112 by NXP Semiconductors

CGD923,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Terminal Finish: GOLD; Minimum Operating Frequency: 40 MHz; Package Equivalence Code: SOT-115J;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

19.5 dB

e4

1

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

490 mA

HYBRID

GOLD

CGY887A,112 by NXP Semiconductors

CGY887A,112

NXP Semiconductors

WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Gain: 25.7 dB; Additional Features: LOW NOISE, HIGH RELIABILITY;

LOW NOISE, HIGH RELIABILITY

75 ohm

MODULE

25.7 dB

e4

870 MHz

40 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

SOT-115J

24

WIDE BAND HIGH POWER

RF/Microwave Amplifiers

240 mA

HYBRID

GOLD

SA5209D,602 by NXP Semiconductors

SA5209D,602

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

e4

SURFACE MOUNT

16

850 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP16,.25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

55 mA

BIPOLAR

Nickel/Palladium/Gold (Ni/Pd/Au)

SA5219D,602 by NXP Semiconductors

SA5219D,602

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e4;

50 ohm

COMPONENT

e4

SURFACE MOUNT

16

700 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP16,.25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

50 mA

BIPOLAR

Nickel/Palladium/Gold (Ni/Pd/Au)

BGM1014,115 by NXP Semiconductors

BGM1014,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

LOW NOISE

50 ohm

COMPONENT

25 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

25 mA

BIPOLAR

Tin (Sn)

BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

LOW NOISE

50 ohm

COMPONENT

24 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

33 mA

BIPOLAR

Tin (Sn)

BGM1012,115 by NXP Semiconductors

BGM1012,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

16 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

19 mA

BIPOLAR

Tin (Sn)

BGA2717,115 by NXP Semiconductors

BGA2717,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Gain: 20 dB;

50 ohm

COMPONENT

20 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

Tin (Sn)

BGA2716,115 by NXP Semiconductors

BGA2716,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

50 ohm

COMPONENT

19 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

21 mA

BIPOLAR

Tin (Sn)

BGA2715,115 by NXP Semiconductors

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 18 dB;

50 ohm

COMPONENT

18 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin (Sn)

BGA2714,115 by NXP Semiconductors

BGA2714,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

2700 MHz

0 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.7 mA

BIPOLAR

Tin (Sn)

BGA2712,115 by NXP Semiconductors

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 100 MHz;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2709,115 by NXP Semiconductors

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 32 mA;

50 ohm

COMPONENT

18 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

32 mA

BIPOLAR

Tin (Sn)

ACPM-5002-TR1 by Broadcom

ACPM-5002-TR1

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 1850 MHz;

50 ohm

MODULE

7 dB

10 dBm

SURFACE MOUNT

1

10

1910 MHz

1850 MHz

85 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.11,24

3.4

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

580 mA

2.5

ACPM-5004-TR1 by Broadcom

ACPM-5004-TR1

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 1710 MHz; Maximum Operating Frequency: 1785 MHz;

50 ohm

MODULE

8 dB

10 dBm

SURFACE MOUNT

1

10

1785 MHz

1710 MHz

85 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.11,24

3.4

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

580 mA

2.5

AVT-50663-BLKG by Broadcom

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-50663-TR1G by Broadcom

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)