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PLASTIC/EPOXY RF & Microwave Amplifiers 412

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

BGU8062J by NXP Semiconductors

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dBm

e4

SURFACE MOUNT

1

10

2700 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC10,.12SQ,20

5

WIDE BAND LOW POWER

IEC-60134

85 mA

NICKEL PALLADIUM GOLD

1.43

BGU8051,118 by NXP Semiconductors

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

17 dB

20 dBm

SURFACE MOUNT

1

8

1500 MHz

300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

60 mA

1.07

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

50 ohm

COMPONENT

17 dB

22 dBm

SURFACE MOUNT

1

24

26500 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

PHEMT

1.49

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

Matte Tin (Sn) - annealed

1.43

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS

A3M40PD012T7 by NXP Semiconductors

A3M40PD012T7

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 2300 MHz; Power Supplies (V): 3.3;

50 ohm

COMPONENT

30 dB

25 dBm

SURFACE MOUNT

1

12

4200 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND MEDIUM POWER

300 mA

1.38

F6922AVRI8 by Renesas Electronics

F6922AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 21200 MHz; Minimum Operating Frequency: 17700 MHz;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6922AVRI by Renesas Electronics

F6922AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI8 by Renesas Electronics

F6923AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI by Renesas Electronics

F6923AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS

UPC2710TB-A by Renesas Electronics

UPC2710TB-A

Renesas Electronics

Renesas Electronics UPC2710TB-A is a wide band low power RF amplifier with 33 dB gain, operating up to 1000 MHz. It has a max input power of 10 dBm and VSWR of 1.67, suitable for RF applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

33 dB

10 dBm

SURFACE MOUNT

1

6

1000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

29 mA

BIPOLAR

1.67

TRF1208RPVR by Texas Instruments

TRF1208RPVR

Texas Instruments

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Gain: 16 dB;

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

NICKEL PALLADIUM GOLD

BTS6302UJ by NXP Semiconductors

BTS6302UJ

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 5000 MHz;

50 ohm

COMPONENT

33.8 dB

10 dBm

SURFACE MOUNT

1

16

5000 MHz

2300 MHz

115 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

IEC-60134

120 mA

1.67

TRF1208RPVT by Texas Instruments

TRF1208RPVT

Texas Instruments

TRF1208RPVT by Texas Instruments is a BICMOS RF amplifier with 16dB gain, operating from 10MHz to 11GHz. It has a max input power of 20dBm and operates on a 3.3V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 105°C.

100 ohm

COMPONENT

16 dB

20 dBm

e4

SURFACE MOUNT

1

12

11000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND LOW POWER

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)