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PLASTIC/EPOXY RF & Microwave Amplifiers 412

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
MGA-30989-BLKG by Broadcom

MGA-30989-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

50 ohm

COMPONENT

8.5 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

66 mA

GAAS

Tin (Sn)

MGA-30989-TR1G by Broadcom

MGA-30989-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

50 ohm

COMPONENT

8.5 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

66 mA

GAAS

Matte Tin (Sn)

MGA-43228-BLKG by Broadcom

MGA-43228-BLKG

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 2300 MHz;

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2500 MHz

2300 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-43228-TR1G by Broadcom

MGA-43228-TR1G

Broadcom

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

28

2500 MHz

2300 MHz

PLASTIC/EPOXY

LCC28,.2SQ,20

5

NARROW BAND HIGH POWER

RF/Microwave Amplifiers

GAAS

Tin (Sn)

MGA-53589-BLKG by Broadcom

MGA-53589-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 13 dBm; JESD-609 Code: e3;

LOW NOISE

50 ohm

COMPONENT

15.3 dB

13 dBm

e3

SURFACE MOUNT

1

3

3000 MHz

50 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Matte Tin (Sn)

MGA-53589-TR1G by Broadcom

MGA-53589-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; Terminal Finish: Matte Tin (Sn);

LOW NOISE

50 ohm

COMPONENT

15.3 dB

13 dBm

e3

SURFACE MOUNT

1

3

3000 MHz

50 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Matte Tin (Sn)

MGA-633P8-BLKG by Broadcom

MGA-633P8-BLKG

Broadcom

Broadcom's MGA-633P8-BLKG is a GAAS RF amplifier with 16.5 dB gain, operating from 450 MHz to 2000 MHz. It has a max input power of 20 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, this component features a surface-mount package with 8 terminals and requires a 5V power supply.

50 ohm

COMPONENT

16.5 dB

20 dBm

e3

SURFACE MOUNT

1

8

2000 MHz

450 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

67 mA

GAAS

Tin (Sn)

MGA-633P8-TR1G by Broadcom

MGA-633P8-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 450 MHz;

50 ohm

COMPONENT

16.5 dB

20 dBm

e3

SURFACE MOUNT

1

8

2000 MHz

450 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

67 mA

GAAS

Matte Tin (Sn)

SKY65116-21 by Skyworks Solutions

SKY65116-21

Skyworks Solutions

SKY65116-21 by Skyworks Solutions is a RF & Microwave Amplifier with 35dB Gain, operating b/w 390-500MHz. It has a max supply current of 1300mA and operates at temperatures ranging from -40 to 85°C. Ideal for wideband high-power applications, it features a surface mounting feature and gold terminal finish.

HIGH RELIABILITY

50 ohm

COMPONENT

35 dB

e4

SURFACE MOUNT

1

12

500 MHz

390 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.32SQ,75/64

3.6

WIDE BAND HIGH POWER

1300 mA

BIPOLAR

Gold (Au)

MGA-412P8-BLKG by Broadcom

MGA-412P8-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 55 mA;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-412P8-TR1G by Broadcom

MGA-412P8-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-412P8-TR2G by Broadcom

MGA-412P8-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 23 dB;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-635T6-BLKG by Broadcom

MGA-635T6-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12.5 dB;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR1G by Broadcom

MGA-635T6-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR2G by Broadcom

MGA-635T6-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

AMMP-6233-BLKG by Broadcom

AMMP-6233-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Frequency: 18000 MHz;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

AMMP-6233-TR1G by Broadcom

AMMP-6233-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 90 mA;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

AMMP-6233-TR2G by Broadcom

AMMP-6233-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 90 mA; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dB

10 dBm

SURFACE MOUNT

1

8

32000 MHz

18000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

90 mA

AFIC31025GNR1 by NXP Semiconductors

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

A3I35D012WGNR1 by NXP Semiconductors

A3I35D012WGNR1

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 4000 MHz;

50 ohm

COMPONENT

26.5 dB

26 dBm

SURFACE MOUNT

2

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

FLNG,.72"H.SPACE

28

NARROW BAND MEDIUM POWER

A3I20X050GNR1 by NXP Semiconductors

A3I20X050GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 2.15/28;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

HMC716ALP3ETR by Analog Devices

HMC716ALP3ETR

Analog Devices

HMC716ALP3ETR by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 50 ohm impedance. It has a max input power of 10 dBm and VSWR of 1.38, suitable for narrow band low power applications in the RF & Microwave field. The component is constructed using GaAs technology and can operate b/w -40 to 85 °C temperature range.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

MAX2644EXT by Maxim Integrated

MAX2644EXT

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

15 dB

5 dBm

e4

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

NICKEL PALLADIUM GOLD

UPC2746TB-E3-A by Renesas Electronics

UPC2746TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

28 dB

24 dBm

e3

SURFACE MOUNT

1

24

14000 MHz

8000 MHz

85 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.2SQ,25

6

WIDE BAND MEDIUM POWER

GAAS

Matte Tin (Sn) - annealed

ADL5723ACPZN-R7 by Analog Devices

ADL5723ACPZN-R7

Analog Devices

ADL5723ACPZN-R7 by Analog Devices is a RF amplifier with 24.1 dB gain, operating frequency range of 10.1-11.7 GHz, and characteristic impedance of 100 ohm. It is designed for wide band low power applications in RF & Microwave systems requiring surface mounting feature.

100 ohm

COMPONENT

24.1 dB

SURFACE MOUNT

1

8

11700 MHz

10100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

BIPOLAR

ADL5726ACPZN-R7 by Analog Devices

ADL5726ACPZN-R7

Analog Devices

ADL5726ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with gain of 22.5 dB. It operates b/w 21.2-23.6 GHz, suitable for RF & Microwave applications requiring surface mount package and 100 ohm impedance.

100 ohm

COMPONENT

22.5 dB

SURFACE MOUNT

1

8

23600 MHz

21200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

50 ohm

COMPONENT

11 dB

e3

SURFACE MOUNT

1

32

28000 MHz

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

300 mA

PHEMT

Matte Tin (Sn)

HMC1114LP5DETR by Analog Devices

HMC1114LP5DETR

Analog Devices

Analog Devices' HMC1114LP5DETR is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and requires a 28 V power supply, drawing up to 150 mA. This wideband high-power device is ideal for applications requiring surface mount construction in RF and microwave systems.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

MATTE TIN

1.43

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

MMZ25332B4T1 by NXP Semiconductors

MMZ25332B4T1

NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

50 ohm

COMPONENT

23.5 dB

30 dBm

e3

SURFACE MOUNT

1

24

2700 MHz

1500 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND MEDIUM POWER

415 mA

HYBRID

TIN

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMZ38333BT1 by NXP Semiconductors

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 5;

50 ohm

COMPONENT

36.3 dB

30 dBm

e3

SURFACE MOUNT

1

24

3800 MHz

3400 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

NARROW BAND LOW POWER

1200 mA

HYBRID

TIN

1.58