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SURFACE MOUNT RF & Microwave Amplifiers 393

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC637BPM5E by Analog Devices

HMC637BPM5E

Analog Devices

Analog Devices' HMC637BPM5E is a GAAS RF amplifier with 12.5 dB gain, operating from 0 to 7500 MHz. It has a max input power of 25 dBm and VSWR of 7, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount construction and operating temperatures from -55°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC637BPM5ETR by Analog Devices

HMC637BPM5ETR

Analog Devices

Analog Devices' HMC637BPM5ETR is a GAAS RF amplifier with 12.5 dB gain, 50 ohm impedance, and 25 dBm CW input power. It operates from 0 to 7500 MHz, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount design and high VSWR tolerance of 7, it's ideal for various communication and radar systems.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

MMZ25332B4T1 by NXP Semiconductors

MMZ25332B4T1

NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

50 ohm

COMPONENT

23.5 dB

30 dBm

e3

SURFACE MOUNT

1

24

2700 MHz

1500 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND MEDIUM POWER

415 mA

HYBRID

TIN

AFIC31025NR1 by NXP Semiconductors

AFIC31025NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; No. of Functions: 2;

50 ohm

COMPONENT

30.5 dB

20 dBm

e3

SURFACE MOUNT

2

17

3100 MHz

2400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMZ38333BT1 by NXP Semiconductors

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 5;

50 ohm

COMPONENT

36.3 dB

30 dBm

e3

SURFACE MOUNT

1

24

3800 MHz

3400 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

NARROW BAND LOW POWER

1200 mA

HYBRID

TIN

1.58

HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

A3I35D025WGNR1 by NXP Semiconductors

A3I35D025WGNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

26.5 dB

28 dBm

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

10

A3I35D025WNR1 by NXP Semiconductors

A3I35D025WNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3200 MHz;

50 ohm

COMPONENT

26.5 dB

28 dBm

e3

SURFACE MOUNT

1

17

4000 MHz

3200 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

BGU8062J by NXP Semiconductors

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

20 dBm

e4

SURFACE MOUNT

1

10

2700 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC10,.12SQ,20

5

WIDE BAND LOW POWER

IEC-60134

85 mA

NICKEL PALLADIUM GOLD

1.43

BGU8051,118 by NXP Semiconductors

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 20 dBm;

50 ohm

COMPONENT

17 dB

20 dBm

SURFACE MOUNT

1

8

1500 MHz

300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

60 mA

1.07

A2I09VD050GNR1 by NXP Semiconductors

A2I09VD050GNR1

NXP Semiconductors

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

35 dB

20 dBm

e3

SURFACE MOUNT

1

12

960 MHz

575 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

48

WIDE BAND HIGH POWER

LDMOS

TIN

10

CMPA5259050F by Wolfspeed

CMPA5259050F

Wolfspeed

The Wolfspeed CMPA5259050F is a ceramic RF amplifier with 31dB gain, operating b/w 5200-5900 MHz. It features PHEMT technology, 50 ohm impedance, and can handle up to 28V power supplies. Ideal for wideband high-power applications requiring surface mounting in temperatures ranging from -40 to 105°C.

50 ohm

COMPONENT

31 dB

SURFACE MOUNT

1

6

5900 MHz

5200 MHz

105 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

1000 mA

PHEMT

3

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

A3I20X050NR1 by NXP Semiconductors

A3I20X050NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 7; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

28 dB

20 dBm

e3

SURFACE MOUNT

1

7

2200 MHz

1800 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

2.15/28

NARROW BAND HIGH POWER

LDMOS

TIN

HMC1022A by Analog Devices

HMC1022A

Analog Devices

Analog Devices' HMC1022A is a GAAS RF amplifier with 1.08 VSWR, 9.5 dB gain, and 50 ohm impedance. Ideal for wideband medium power applications from 0 to 48000 MHz, it features surface mounting and requires a 10V power supply.

50 ohm

COMPONENT

9.5 dB

SURFACE MOUNT

1

8

48000 MHz

0 MHz

DIE OR CHIP

10

WIDE BAND MEDIUM POWER

GAAS

1.08

ADPA7007CHIP by Analog Devices

ADPA7007CHIP

Analog Devices

ADPA7007CHIP by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating from 18-44 GHz. It has a max input power of 18 dBm and requires a 5V power supply, drawing up to 1400 mA. Ideal for wide band medium power applications in RF & microwave systems.

50 ohm

COMPONENT

18 dB

18 dBm

SURFACE MOUNT

1

10

44000 MHz

18000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

1400 mA

PHEMT

ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

ADPA7007AEHZ by Analog Devices

ADPA7007AEHZ

Analog Devices

ADPA7007AEHZ by Analog Devices is a RF amplifier with 27 dBm CW input power, 1.29 VSWR, and 18.5 dB gain. Ideal for wideband medium power applications in the frequency range of 20-44 GHz. Features GaAs technology, ceramic-metal package, and surface mounting option.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

MAAM-011252-DIE by M/a-com Technology Solutions

MAAM-011252-DIE

M/a-com Technology Solutions

MAAM-011252-DIE by M/a-com Technology Solutions is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 30 MHz to 8000 MHz, handling up to 24 dBm CW input power. Ideal for RF & microwave applications requiring high performance in compact designs.

50 ohm

COMPONENT

18 dB

24 dBm

SURFACE MOUNT

1

8

8000 MHz

30 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

1.67

ADL8104ACPZN by Analog Devices

ADL8104ACPZN

Analog Devices

ADL8104ACPZN by Analog Devices is a PHEMT RF amplifier with 10dB gain, 400-7500MHz frequency range, and 25dBm CW input power. Widely used in RF & microwave applications due to its wide band medium power capabilities and surface mounting feature.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADL8104ACPZN-R7 by Analog Devices

ADL8104ACPZN-R7

Analog Devices

ADL8104ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 10 dB gain, operating from 400 MHz to 7500 MHz. It has a max input power of 25 dBm and VSWR of 1.58, suitable for wideband medium-power applications. With a compact surface-mount construction and operating temperatures from -40 °C to 85°C, it's ideal for RF and microwave systems.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

ADPA1105ACGZN-R7 by Analog Devices

ADPA1105ACGZN-R7

Analog Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Technology: GAN; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 30 dBm;

50 ohm

COMPONENT

30.5 dB

30 dBm

e4

SURFACE MOUNT

1

32

1600 MHz

900 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

NARROW BAND HIGH POWER

GAN

NICKEL PALLADIUM GOLD

1.5

AFSC5G40E38T2 by NXP Semiconductors

AFSC5G40E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Power Supplies (V): 28;

50 ohm

COMPONENT

27.1 dB

SURFACE MOUNT

1

26

4000 MHz

3700 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

28

NARROW BAND HIGH POWER

LDMOS

AFSC5G35E38T2 by NXP Semiconductors

AFSC5G35E38T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Package Equivalence Code: LCC26,.24X.4,40;

50 ohm

COMPONENT

29.3 dB

e4

SURFACE MOUNT

1

26

3700 MHz

3400 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

30

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

A3M35TL039T2 by NXP Semiconductors

A3M35TL039T2

NXP Semiconductors

NXP Semiconductors A3M35TL039T2 is a 26V LDMOS RF amplifier with 26 terminals, operating from 3300-3700 MHz. It offers 26.5 dB gain and is ideal for narrowband high-power applications at temperatures up to 125°C. This surface-mount component has a characteristic impedance of 50 ohms, making it suitable for various RF and microwave systems.

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.5 dB

SURFACE MOUNT

1

26

3700 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

A3M37TL039T2 by NXP Semiconductors

A3M37TL039T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

26.1 dB

e4

SURFACE MOUNT

1

26

3800 MHz

3600 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,40

26

NARROW BAND HIGH POWER

LDMOS

NICKEL PALLADIUM GOLD

ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.

50 ohm

COMPONENT

17 dB

22 dBm

SURFACE MOUNT

1

24

26500 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

PHEMT

1.49

MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

16.5 dB

10 dBm

SURFACE MOUNT

1

8

20000 MHz

5000 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

140 mA

1.58

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

Matte Tin (Sn) - annealed

1.43

AFSC5G23E37T2 by NXP Semiconductors

AFSC5G23E37T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 2400 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

32 dB

SURFACE MOUNT

1

26

2400 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

28

NARROW BAND HIGH POWER

LDMOS

A3M40PD012T7 by NXP Semiconductors

A3M40PD012T7

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 2300 MHz; Power Supplies (V): 3.3;

50 ohm

COMPONENT

30 dB

25 dBm

SURFACE MOUNT

1

12

4200 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND MEDIUM POWER

300 mA

1.38

F1429MBNELI8 by Renesas Electronics

F1429MBNELI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Equivalence Code: LCC12,.08SQ,20; Gain: 18 dB; Construction: COMPONENT;

LOW NOISE

100 ohm

COMPONENT

18 dB

20 dBm

SURFACE MOUNT

1

12

4200 MHz

3000 MHz

115 Cel

-40 Cel

LCC12,.08SQ,20

3.3/5

WIDE BAND LOW POWER

86 mA

1.1

F6922AVRI8 by Renesas Electronics

F6922AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 21200 MHz; Minimum Operating Frequency: 17700 MHz;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6922AVRI by Renesas Electronics

F6922AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; No. of Functions: 2; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

21200 MHz

17700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI8 by Renesas Electronics

F6923AVRI8

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

F6923AVRI by Renesas Electronics

F6923AVRI

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 23; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

19.5 dB

0 dBm

e3

SURFACE MOUNT

2

23

17000 MHz

14000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA23,5X5,20

0.95

WIDE BAND LOW POWER

TIN

2

ADPA1107ACPZN by Analog Devices

ADPA1107ACPZN

Analog Devices

ADPA1107ACPZN by Analog Devices is a GAN technology RF amplifier with 27dB gain, operating b/w 4800-6000MHz. It has a max input power of 31dBm and VSWR of 1.54, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54

ADPA1107ACPZN-R7 by Analog Devices

ADPA1107ACPZN-R7

Analog Devices

ADPA1107ACPZN-R7 by Analog Devices is a GAN technology RF amplifier with 27dB gain, 50 ohm impedance, and 31dBm CW input power. It operates b/w 4800-6000MHz, suitable for wideband high-power applications in RF & microwave systems.

50 ohm

COMPONENT

27 dB

31 dBm

SURFACE MOUNT

1

40

6000 MHz

4800 MHz

85 Cel

-40 Cel

LCC40,.24SQ,20

WIDE BAND HIGH POWER

GAN

1.54

A3M34TL139T2 by NXP Semiconductors

A3M34TL139T2

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 26; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Minimum Operating Frequency: 3300 MHz;

I/P POWER-MAX (PEAK)=25DBM

50 ohm

COMPONENT

25.6 dB

SURFACE MOUNT

1

26

3580 MHz

3300 MHz

125 Cel

PLASTIC/EPOXY

LCC26,.24X.4,20

27

NARROW BAND HIGH POWER

LDMOS