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SURFACE MOUNT RF & Microwave Amplifiers 393

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
MGA-675T6-BLKG by Broadcom

MGA-675T6-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 4900 MHz;

50 ohm

COMPONENT

16.3 dB

12 dBm

e4

SURFACE MOUNT

1

6

6000 MHz

4900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

13 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-675T6-TR1G by Broadcom

MGA-675T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 12 dBm;

50 ohm

COMPONENT

16.3 dB

12 dBm

e4

SURFACE MOUNT

1

6

6000 MHz

4900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

13 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

UPC8236T6N-E2-A by Renesas Electronics

UPC8236T6N-E2-A

Renesas Electronics

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

COMPONENT

17 dB

10 dBm

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.06,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

8 mA

BIPOLAR

BGA2012,115 by NXP Semiconductors

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 10 mA;

50 ohm

COMPONENT

14 dB

e3

SURFACE MOUNT

1

6

150 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

Tin (Sn)

BGA2031/1,115 by NXP Semiconductors

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.4;

50 ohm

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

6

2500 MHz

800 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BIPOLAR

Tin (Sn)

1.4

BGA2748,115 by NXP Semiconductors

BGA2748,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Power Supplies (V): 3;

LOW NOISE

50 ohm

COMPONENT

18.5 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

8 mA

Tin (Sn)

BGA2771,115 by NXP Semiconductors

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

50 ohm

COMPONENT

20.8 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

BIPOLAR

Tin (Sn)

BGA6289,135 by NXP Semiconductors

BGA6289,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 8; Maximum Input Power (CW): 15 dBm;

50 ohm

COMPONENT

12 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

96 mA

Tin (Sn)

BGA6489,135 by NXP Semiconductors

BGA6489,135

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 2500 MHz;

50 ohm

COMPONENT

15 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

86 mA

Tin (Sn)

BGA6589,135 by NXP Semiconductors

BGA6589,135

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 89 mA; Minimum Operating Frequency: 850 MHz;

50 ohm

COMPONENT

15 dB

15 dBm

e3

SURFACE MOUNT

1

3

2500 MHz

850 MHz

PLASTIC/EPOXY

TO-243

9

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

89 mA

Tin (Sn)

BGS67A,112 by NXP Semiconductors

BGS67A,112

NXP Semiconductors

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Operating Frequency: 65 MHz;

LOW NOISE, HIGH RELIABILITY

75 ohm

COMPONENT

25 dB

SURFACE MOUNT

1

8

65 MHz

5 MHz

100 Cel

-20 Cel

PLASTIC/EPOXY

DILCC8,.46

12

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

95 mA

SA5209D,602 by NXP Semiconductors

SA5209D,602

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

e4

SURFACE MOUNT

16

850 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP16,.25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

55 mA

BIPOLAR

Nickel/Palladium/Gold (Ni/Pd/Au)

SA5219D,602 by NXP Semiconductors

SA5219D,602

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e4;

50 ohm

COMPONENT

e4

SURFACE MOUNT

16

700 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOP16,.25

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

50 mA

BIPOLAR

Nickel/Palladium/Gold (Ni/Pd/Au)

BGM1014,115 by NXP Semiconductors

BGM1014,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

LOW NOISE

50 ohm

COMPONENT

25 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

25 mA

BIPOLAR

Tin (Sn)

BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

LOW NOISE

50 ohm

COMPONENT

24 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

33 mA

BIPOLAR

Tin (Sn)

BGM1012,115 by NXP Semiconductors

BGM1012,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

16 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

19 mA

BIPOLAR

Tin (Sn)

BGA2717,115 by NXP Semiconductors

BGA2717,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Gain: 20 dB;

50 ohm

COMPONENT

20 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

Tin (Sn)

BGA2716,115 by NXP Semiconductors

BGA2716,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

50 ohm

COMPONENT

19 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

21 mA

BIPOLAR

Tin (Sn)

BGA2715,115 by NXP Semiconductors

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 18 dB;

50 ohm

COMPONENT

18 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin (Sn)

BGA2714,115 by NXP Semiconductors

BGA2714,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

2700 MHz

0 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.7 mA

BIPOLAR

Tin (Sn)

BGA2712,115 by NXP Semiconductors

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 100 MHz;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2709,115 by NXP Semiconductors

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 32 mA;

50 ohm

COMPONENT

18 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

32 mA

BIPOLAR

Tin (Sn)

ACPM-5002-TR1 by Broadcom

ACPM-5002-TR1

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 1850 MHz;

50 ohm

MODULE

7 dB

10 dBm

SURFACE MOUNT

1

10

1910 MHz

1850 MHz

85 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.11,24

3.4

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

580 mA

2.5

ACPM-5004-TR1 by Broadcom

ACPM-5004-TR1

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 1710 MHz; Maximum Operating Frequency: 1785 MHz;

50 ohm

MODULE

8 dB

10 dBm

SURFACE MOUNT

1

10

1785 MHz

1710 MHz

85 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.11,24

3.4

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

580 mA

2.5

AVT-50663-BLKG by Broadcom

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-50663-TR1G by Broadcom

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-52663-BLKG by Broadcom

AVT-52663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

AVT-52663-TR1G by Broadcom

AVT-52663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

MGA-645T6-TR1G by Broadcom

MGA-645T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-645T6-TR2G by Broadcom

MGA-645T6-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.

LOW NOISE

50 ohm

COMPONENT

23 dB

10 dBm

e4

SURFACE MOUNT

1

8

21000 MHz

7000 MHz

PLASTIC/EPOXY

LCC8(UNSPEC)

4

WIDE BAND LOW POWER

RF/Microwave Amplifiers

160 mA

Nickel/Gold (Ni/Au)

MAX2644EXT-T by Maxim Integrated

MAX2644EXT-T

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: TIN LEAD;

50 ohm

COMPONENT

15 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

TIN LEAD

MAX2130EUA by Maxim Integrated

MAX2130EUA

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e0; Gain: 7.1 dB;

75 ohm

COMPONENT

7.1 dB

15 dBm

e0

SURFACE MOUNT

1

8

878 MHz

44 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP8,.19

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

104 mA

TIN LEAD

2

MAX2371EGC by Maxim Integrated

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Maximum Input Power (CW): 5 dBm; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

174 MHz

136 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn85Pb15)

MAX2632EUS-T by Maxim Integrated

MAX2632EUS-T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

LOW NOISE

50 ohm

COMPONENT

11 dB

5 dBm

e0

SURFACE MOUNT

4

1000 MHz

800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

11 mA

BIPOLAR

Tin/Lead (Sn/Pb)

1.25

MAX2641EUT by Maxim Integrated

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 6.4 mA;

50 ohm

COMPONENT

12.4 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

1400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP6,.11,37

3/5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

6.4 mA

BIPOLAR

TIN LEAD

MAX2130EUA-T by Maxim Integrated

MAX2130EUA-T

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Gain: 7.1 dB; Package Equivalence Code: TSSOP8,.19;

75 ohm

COMPONENT

7.1 dB

15 dBm

e0

SURFACE MOUNT

1

8

878 MHz

44 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP8,.19

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

104 mA

Tin/Lead (Sn85Pb15)

2

MAX2373EGC-T by Maxim Integrated

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Package Equivalence Code: LCC12,.12SQ,20; Maximum Input Power (CW): 5 dBm;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

940 MHz

850 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn/Pb)

MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.

LOW NOISE

50 ohm

COMPONENT

17.3 dB

13 dBm

e0

SURFACE MOUNT

1

4

1100 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-253

3.8

WIDE BAND LOW POWER

RF/Microwave Amplifiers

TIN LEAD

1.6

CC2590RGVT by Texas Instruments

CC2590RGVT

Texas Instruments

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: NICKEL PALLADIUM GOLD;

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

WS1103-TR1 by Broadcom

WS1103-TR1

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;

50 ohm

COMPONENT

14 dB

10 dBm

SURFACE MOUNT

1

8

849 MHz

824 MHz

85 Cel

-30 Cel

PLASTIC/EPOXY

SOLCC8,.11,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

515 mA

2.5

CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

SKY65013-70LF by Skyworks Solutions

SKY65013-70LF

Skyworks Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 7000 MHz; Gain: 12.5 dB;

50 ohm

COMPONENT

12.5 dB

15 dBm

SURFACE MOUNT

1

3

7000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

3.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

2

SKY65015-92LF by Skyworks Solutions

SKY65015-92LF

Skyworks Solutions

SKY65015-92LF by Skyworks Solutions is a GAAS RF amplifier with 18dB gain, 50 ohm impedance, and 6000 MHz operating frequency. It's used in wideband low-power applications, offering a max input power of 15 dBm and VSWR of 2 for surface mounting at temperatures ranging from -45 to 85°C.

50 ohm

COMPONENT

18 dB

15 dBm

SURFACE MOUNT

1

3

6000 MHz

85 Cel

-45 Cel

PLASTIC/EPOXY

TO-243

4.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

2

AD8353ACP-R2 by Analog Devices

AD8353ACP-R2

Analog Devices

AD8353ACP-R2 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is housed in a plastic/epoxy package with surface mounting feature.

50 ohm

COMPONENT

15.6 dB

10 dBm

e0

SURFACE MOUNT

1

8

2700 MHz

1 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Tin/Lead (Sn85Pb15)

SMA661ASTR by STMicroelectronics

SMA661ASTR

STMicroelectronics

SMA661ASTR by STMicroelectronics is a wide-band low-power RF amplifier with 18 dB gain, operating b/w -40 °C and 85 °C. It features a 6-terminal surface mount design and requires a power supply of 2.7V. Ideal for RF applications in compact devices.

LOW NOISE

50 ohm

COMPONENT

18 dB

e4

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

FL6,.047,20

2.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

THS9000DRWR by Texas Instruments

THS9000DRWR

Texas Instruments

THS9000DRWR by Texas Instruments is a wide band medium power RF amplifier with 15.7 dB gain, operating from 50 MHz to 400 MHz. It has a max supply current of 100 mA and operates in temperatures ranging from -40°C to 85°C. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

50 ohm

COMPONENT

15.7 dB

e4

SURFACE MOUNT

1

6

400 MHz

50 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

5

WIDE BAND MEDIUM POWER

100 mA

NICKEL PALLADIUM GOLD SILVER

TRF1123IRTMTG3 by Texas Instruments

TRF1123IRTMTG3

Texas Instruments

TRF1123IRTMTG3 by Texas Instruments is a RF amplifier with 26dB gain, operating frequency range of 2100-2700MHz, and 20dBm max input power. Ideal for narrow band medium power applications requiring surface mounting feature and 50 ohm characteristic impedance.

50 ohm

COMPONENT

26 dB

20 dBm

e3

SURFACE MOUNT

1

32

2700 MHz

2100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

7

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

700 mA

Matte Tin (Sn)