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SURFACE MOUNT RF & Microwave Amplifiers 393

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Total Dose (V) Maximum Voltage Standing Wave Ratio
HMC8412LP2FETR by Analog Devices

HMC8412LP2FETR

Analog Devices

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

ADPA7004CHIP-SX by Analog Devices

ADPA7004CHIP-SX

Analog Devices

ADPA7004CHIP-SX by Analog Devices is a PHEMT technology RF amplifier with 13dB gain, operating from 40-80GHz. It has a max input power of 18dBm and VSWR of 1.15, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13 dB

18 dBm

SURFACE MOUNT

1

16

80000 MHz

40000 MHz

85 Cel

-55 Cel

DIE OR CHIP

-0.4,3.5

WIDE BAND MEDIUM POWER

PHEMT

1.15

ADPA7009CHIP by Analog Devices

ADPA7009CHIP

Analog Devices

ADPA7009CHIP by Analog Devices is a PHEMT technology RF amplifier with 20 dBm CW input power, 1.17 VSWR, and 17.5 dB gain. It operates b/w -55 °C to 85°C, covering frequencies from 20 GHz to 54 GHz. Ideal for wideband medium-power applications requiring surface mounting feature.

50 ohm

COMPONENT

17.5 dB

20 dBm

SURFACE MOUNT

1

10

54000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

PHEMT

1.17

ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADPA1106ACGZN by Analog Devices

ADPA1106ACGZN

Analog Devices

ADPA1106ACGZN by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating from 2700 MHz to 3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

ADPA1106ACGZN-R7 by Analog Devices

ADPA1106ACGZN-R7

Analog Devices

ADPA1106ACGZN-R7 by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating b/w 2700-3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

MAX2644EXT by Maxim Integrated

MAX2644EXT

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

15 dB

5 dBm

e4

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

NICKEL PALLADIUM GOLD

HMC1131LC4TR by Analog Devices

HMC1131LC4TR

Analog Devices

HMC1131LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain, operating from 24 to 35 GHz. It has a max input power of 12 dBm and operates on a 5V power supply. This ceramic-packaged component is ideal for RF and microwave applications requiring high frequency amplification in the -40 to +85°C temperature range.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1131LC4 by Analog Devices

HMC1131LC4

Analog Devices

HMC1131LC4 by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 24 to 35 GHz, handling up to 12 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

UPC2746TB-E3-A by Renesas Electronics

UPC2746TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

50 ohm

COMPONENT

11 dB

34 dBm

SURFACE MOUNT

1

10

20000 MHz

2000 MHz

85 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

GAN

6

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

HMC8120-SX by Analog Devices

HMC8120-SX

Analog Devices

HMC8120-SX by Analog Devices is a wide band low power RF amplifier with 19 dB gain. Operating frequency range from 71-76 GHz, ideal for high-frequency applications. Features PHEMT technology, 50 ohm impedance, and surface mounting for easy integration.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC8120 by Analog Devices

HMC8120

Analog Devices

HMC8120 by Analog Devices is a PHEMT RF amplifier with 19 dB gain, operating b/w 71-76 GHz. It features 28 terminals, 50 ohm impedance, and consumes up to 250 mA at 4 V. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

28 dB

24 dBm

e3

SURFACE MOUNT

1

24

14000 MHz

8000 MHz

85 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.2SQ,25

6

WIDE BAND MEDIUM POWER

GAAS

Matte Tin (Sn) - annealed

HMC7543-SX by Analog Devices

HMC7543-SX

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Power Supplies (V): 4; Construction: COMPONENT; Maximum Operating Frequency: 76000 MHz;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

HMC7543 by Analog Devices

HMC7543

Analog Devices

Analog Devices' HMC7543 is a PHEMT RF amplifier with 19 dB gain, operating from 71-76 GHz. It requires a 4V power supply and draws up to 450 mA current. Ideal for wideband medium-power applications in RF and microwave systems, it has a characteristic impedance of 50 ohms and operates b/w -55 °C to +85°C.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

ADL5723ACPZN-R7 by Analog Devices

ADL5723ACPZN-R7

Analog Devices

ADL5723ACPZN-R7 by Analog Devices is a RF amplifier with 24.1 dB gain, operating frequency range of 10.1-11.7 GHz, and characteristic impedance of 100 ohm. It is designed for wide band low power applications in RF & Microwave systems requiring surface mounting feature.

100 ohm

COMPONENT

24.1 dB

SURFACE MOUNT

1

8

11700 MHz

10100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

BIPOLAR

ADL5726ACPZN-R7 by Analog Devices

ADL5726ACPZN-R7

Analog Devices

ADL5726ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with gain of 22.5 dB. It operates b/w 21.2-23.6 GHz, suitable for RF & Microwave applications requiring surface mount package and 100 ohm impedance.

100 ohm

COMPONENT

22.5 dB

SURFACE MOUNT

1

8

23600 MHz

21200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

1.8,3.3

WIDE BAND LOW POWER

HMC392ALC4 by Analog Devices

HMC392ALC4

Analog Devices

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.

HIGH RELIABILITY

50 ohm

COMPONENT

14.5 dB

20 dBm

e4

SURFACE MOUNT

1

24

8000 MHz

3500 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

75 mA

GAAS

GOLD NICKEL

HMC392A by Analog Devices

HMC392A

Analog Devices

Analog Devices' HMC392A is a GAAS RF amplifier with 14.5 dB gain, operating from 3.5 to 7 GHz. It has a max input power of 20 dBm and requires a 5V supply, drawing up to 75 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

14.5 dB

20 dBm

SURFACE MOUNT

1

10

7000 MHz

3500 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

75 mA

GAAS

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

50 ohm

COMPONENT

11 dB

e3

SURFACE MOUNT

1

32

28000 MHz

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

300 mA

PHEMT

Matte Tin (Sn)

HMC8121-SX by Analog Devices

HMC8121-SX

Analog Devices

Analog Devices' HMC8121-SX is a PHEMT RF amplifier with 19 dB gain, operating b/w 81-86 GHz. Ideal for wide band low power applications, it has a characteristic impedance of 50 ohm and operates from -55 to 85 °C. Suitable for surface mount construction with a 5V power supply requirement.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8121 by Analog Devices

HMC8121

Analog Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Temperature: -55 Cel;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND LOW POWER

PHEMT

HMC8142-SX by Analog Devices

HMC8142-SX

Analog Devices

HMC8142-SX by Analog Devices is a wide band medium power RF amplifier with 19 dB gain. Operating from 81-86 GHz, it has a characteristic impedance of 50 ohm and consumes up to 450 mA at 4 V. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8142 by Analog Devices

HMC8142

Analog Devices

Analog Devices' HMC8142 is a wide band medium power RF amplifier with 19 dB gain, operating from 81-86 GHz. It features E-PHEMT technology, 50 ohm impedance, and consumes up to 450 mA at 4 V. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8401-SX by Analog Devices

HMC8401-SX

Analog Devices

HMC8401-SX by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating from 10 MHz to 28 GHz. It has a max input power of 20 dBm and requires a 7.5 V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC8401 by Analog Devices

HMC8401

Analog Devices

HMC8401 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 7.5V supply, and 12.5dB gain. Utilizes PHEMT tech for wide band low power applications from 10MHz to 28GHz. With surface mount feature, it operates b/w -55°C to 85°C temperature range.

50 ohm

COMPONENT

12.5 dB

20 dBm

SURFACE MOUNT

1

8

28000 MHz

10 MHz

85 Cel

-55 Cel

DIE OR CHIP

7.5

WIDE BAND LOW POWER

60 mA

PHEMT

HMC1114LP5DETR by Analog Devices

HMC1114LP5DETR

Analog Devices

Analog Devices' HMC1114LP5DETR is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and requires a 28 V power supply, drawing up to 150 mA. This wideband high-power device is ideal for applications requiring surface mount construction in RF and microwave systems.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

MATTE TIN

1.43

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN

A2I20D040GNR1 by NXP Semiconductors

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I20D040NR1 by NXP Semiconductors

A2I20D040NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

31.5 dB

18 dBm

e3

SURFACE MOUNT

1

17

2200 MHz

1400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010GNR1 by NXP Semiconductors

MMRF2010GNR1

NXP Semiconductors

MMRF2010GNR1 by NXP Semiconductors is a RF amplifier with 30.5 dB gain, operating frequency range of 1030-1090 MHz, and max input power of 25 dBm. It is designed for narrow band high power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features LDMOS technology, surface mounting, and can operate b/w -55 to 150 °C temperature range.

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

MMRF2010NR1 by NXP Semiconductors

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Construction: COMPONENT;

50 ohm

COMPONENT

30.5 dB

25 dBm

e3

SURFACE MOUNT

1

14

1090 MHz

1030 MHz

150 Cel

-55 Cel

PLASTIC/EPOXY

50

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060GNR1 by NXP Semiconductors

A2I35H060GNR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Operating Frequency: 3800 MHz;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

A2I35H060NR1 by NXP Semiconductors

A2I35H060NR1

NXP Semiconductors

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 17; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

23 dB

26 dBm

e3

SURFACE MOUNT

1

17

3800 MHz

3400 MHz

150 Cel

-40 Cel

PLASTIC/EPOXY

28

NARROW BAND HIGH POWER

LDMOS

TIN

10

HMC797ALP5E by Analog Devices

HMC797ALP5E

Analog Devices

HMC797ALP5E by Analog Devices is a GAAS RF amplifier with 11dB gain, operating from 0-22000MHz. It has a max input power of 27dBm and VSWR of 7, suitable for wideband medium power applications. With a compact design and surface mount feature, it operates at temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

11 dB

27 dBm

SURFACE MOUNT

1

32

22000 MHz

0 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

3.5,10

WIDE BAND MEDIUM POWER

440 mA

GAAS

7

HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC5805LS6TR by Analog Devices

HMC5805LS6TR

Analog Devices

Analog Devices' HMC5805LS6TR is a GAAS RF amplifier with 13.5 dB gain, operating up to 40 GHz. With a max input power of 17 dBm and VSWR of 7, it's ideal for wideband low-power applications in RF & microwave systems requiring high-frequency amplification. The ceramic package and surface-mounting feature make it suitable for various environments, from -40 °C to 85°C.

50 ohm

COMPONENT

13.5 dB

17 dBm

SURFACE MOUNT

1

16

40000 MHz

85 Cel

-40 Cel

CERAMIC

LCC16,.24SQ,40/32

10

WIDE BAND LOW POWER

GAAS

7

HMC8325-SX by Analog Devices

HMC8325-SX

Analog Devices

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT