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MULTI-PORT SRAM SRAM 114

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
7130LA100JI8 by Integrated Device Technology

7130LA100JI8

Integrated Device Technology

7130LA100JI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it features an access time of 100ns and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

100 ns

COMMON

S-PQCC-J52

e0

8192 bit

MULTI-PORT SRAM

8

3

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

7130LA55PFI8 by Integrated Device Technology

7130LA55PFI8

Integrated Device Technology

7130LA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at an industrial temperature grade, it has a max access time of 55ns and operates in parallel mode. Suitable for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G64

e0

8192 bit

MULTI-PORT SRAM

8

3

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

71321LA55JI8 by Integrated Device Technology

71321LA55JI8

Integrated Device Technology

71321LA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at -40 to 85°C. It features a 5V supply voltage, 52 terminals in a chip carrier package, and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

55 ns

COMMON

S-PQCC-J52

e0

16384 bit

MULTI-PORT SRAM

8

3

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

140 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA35JI8 by Integrated Device Technology

71342SA35JI8

Integrated Device Technology

71342SA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports asynchronous operation. Ideal for industrial applications requiring fast memory access and common I/O type.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.015 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71342SA55PFI8 by Integrated Device Technology

71342SA55PFI8

Integrated Device Technology

Integrated Device Technology's 71342SA55PFI8 is a 4Kx8 MULTI-PORT SRAM with 4096 words, operating at 5V. Featuring an access time of 55ns and a memory density of 32768 bits, it is ideal for industrial applications requiring fast and reliable parallel memory storage. The device comes in a square flatpack package with surface mount capability, making it suitable for various electronic systems.

55 ns

COMMON

S-PQFP-G64

e0

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

.015 Amp

4.5 V

SRAMs

270 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

7134LA35JI8 by Integrated Device Technology

7134LA35JI8

Integrated Device Technology

7134LA35JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

COMMON

S-PQCC-J52

e0

32768 bit

MULTI-PORT SRAM

8

3

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

71421SA25PFI8 by Integrated Device Technology

71421SA25PFI8

Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: QFP; Package Shape: SQUARE; Technology: CMOS;

25 ns

COMMON

S-PQFP-G64

e0

16384 bit

MULTI-PORT SRAM

8

3

2

64

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP64,.66SQ,32

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.03 Amp

4.5 V

SRAMs

270 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

CY7C131-55JXCT by Cypress Semiconductor

CY7C131-55JXCT

Cypress Semiconductor

CY7C131-55JXCT by Cypress Semiconductor is a 1Kx8 SRAM with 55ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact chip carrier package.

55 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

110 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

20

19.1262 mm

7007L20PFGI8 by Integrated Device Technology

7007L20PFGI8

Integrated Device Technology

7007L20PFGI8 by Integrated Device Technology is a 32Kx8 MULTI-PORT SRAM with 3-STATE output, operating at 5V. It features a max access time of 20ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

20 ns

COMMON

S-PQFP-G80

e3

262144 bit

MULTI-PORT SRAM

8

3

1

2

80

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP80,.64SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

.01 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.635 mm

QUAD

30

7024L55PFI by Integrated Device Technology

7024L55PFI

Integrated Device Technology

7024L55PFI by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 4096 words and 16 memory width. Operating at -40 to 85 °C, it has an access time of 55 ns and consumes a max current of 0.004 Amp. Ideal for industrial applications requiring fast data access in a compact FLATPACK package.

55 ns

COMMON

S-PQFP-G100

e0

65536 bit

MULTI-PORT SRAM

16

3

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

70V25S25PFI8 by Integrated Device Technology

70V25S25PFI8

Integrated Device Technology

70V25S25PFI8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with 3.3V supply, operating at -40 to 85°C. Featuring a fast access time of 25ns and low standby current of 0.015A, it's ideal for industrial applications requiring high-speed memory solutions.

25 ns

COMMON

S-PQFP-G100

e0

131072 bit

MULTI-PORT SRAM

16

3

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

3.3

Not Qualified

.015 Amp

3 V

SRAMs

190 mA

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

QUAD

20

CY7C131E-15NXI by Cypress Semiconductor

CY7C131E-15NXI

Cypress Semiconductor

CY7C131E-15NXI by Cypress Semiconductor is a 1Kx8 SRAM with 15ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for industrial applications requiring fast memory access in a compact square package.

15 ns

COMMON

S-PQFP-G52

e3

10 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

260

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CY7C131E-55JXC by Cypress Semiconductor

CY7C131E-55JXC

Cypress Semiconductor

CY7C131E-55JXC by Cypress Semiconductor is a 1Kx8 SRAM chip with 55ns access time, operating at 5V. It features asynchronous mode, 3-state output, and common I/O type. Ideal for commercial applications requiring fast memory access in a compact square chip carrier package.

55 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

20

19.1262 mm

CY7C136E-25JXC by Cypress Semiconductor

CY7C136E-25JXC

Cypress Semiconductor

CY7C136E-25JXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQCC-J52

e3

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

260

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

19.1262 mm

CY7C136E-25NXC by Cypress Semiconductor

CY7C136E-25NXC

Cypress Semiconductor

CY7C136E-25NXC by Cypress Semiconductor is a 2Kx8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

COMMON

S-PQFP-G52

e3

10 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QFP

QFP52,.52SQ

SQUARE

FLATPACK

PARALLEL

5

Not Qualified

2.5 mm

.015 Amp

4.5 V

SRAMs

275 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10 mm

CYD18S36V18-167BBAI by Cypress Semiconductor

CYD18S36V18-167BBAI

Cypress Semiconductor

CYD18S36V18-167BBAI by Cypress Semiconductor is a 512Kx36 MULTI-PORT SRAM with 167 MHz fCLK. Operating at -40 to 85 °C, it has a low profile GRID ARRAY package and consumes up to 780 mA at 1.5/1.8 Vsup. Ideal for industrial applications requiring fast access times and high memory density.

4 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

167 MHz

COMMON

S-PBGA-B256

e0

17 mm

18874368 bit

MULTI-PORT SRAM

36

3

1

2

256

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA256,16X16,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8

Not Qualified

1.7 mm

.35 Amp

1.4 V

SRAMs

780 mA

1.58 V

1.42 V

1.5

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

17 mm

CY7C131-25JC by Cypress Semiconductor

CY7C131-25JC

Cypress Semiconductor

CY7C131-25JC by Cypress Semiconductor is a 1Kx8 SRAM with 25ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast memory access in commercial-grade environments.

25 ns

INTERRUPT FLAG

COMMON

S-PQCC-J52

e0

19.1262 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

52

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

YES

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

5.08 mm

.015 Amp

4.5 V

SRAMs

170 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

19.1262 mm

SN74AS870DWR by Texas Instruments

SN74AS870DWR

Texas Instruments

SN74AS870DWR by Texas Instruments is a 16x4 MULTI-PORT SRAM with 64-bit memory density. It operates at 5V, has a max access time of 15ns, and features 3-STATE output characteristics. This TTL technology chip is ideal for applications requiring fast and efficient parallel memory storage.

15 ns

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

R-PDSO-G24

15.4 mm

64 bit

MULTI-PORT SRAM

4

1

2

24

16 words

16

ASYNCHRONOUS

70 Cel

0 Cel

16X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

2.65 mm

5.5 V

4.5 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

7.5 mm

CY7C09099V-12AC by Cypress Semiconductor

CY7C09099V-12AC

Cypress Semiconductor

CY7C09099V-12AC by Cypress Semiconductor is a 128KX8 MULTI-PORT SRAM with synchronous operation and 3.3V power supply. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and telecommunications systems.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

8

3

1

2

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00025 Amp

3 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C024AV-25AC by Cypress Semiconductor

CY7C024AV-25AC

Cypress Semiconductor

CY7C024AV-25AC by Cypress Semiconductor is a 4Kx16 SRAM with 3.3V supply, operating at 0-70°C. It features 25ns access time, 100 terminals in a square package, and is ideal for multi-port memory applications.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00005 Amp

2 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C09349A-12AC by Cypress Semiconductor

CY7C09349A-12AC

Cypress Semiconductor

CY7C09349A-12AC by Cypress Semiconductor is a 4Kx18 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has a max access time of 25ns, and is ideal for applications requiring multi-port memory solutions in commercial-grade environments.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

COMMON

S-PQFP-G100

e0

14 mm

73728 bit

MULTI-PORT SRAM

18

1

2

100

4096 words

4K

SYNCHRONOUS

70 Cel

0 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

5

Not Qualified

1.6 mm

.0005 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

QUAD

14 mm

7008L20JI8 by Integrated Device Technology

7008L20JI8

Integrated Device Technology

7008L20JI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for industrial applications requiring fast and reliable memory storage with common I/O type.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQCC-J84

e0

29.3116 mm

524288 bit

MULTI-PORT SRAM

8

1

1

2

84

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.3116 mm

7008L20PFI8 by Integrated Device Technology

7008L20PFI8

Integrated Device Technology

7008L20PFI8 by Integrated Device Technology is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast access times of up to 20ns. This multi-port SRAM has a memory density of 524288 bits and can operate in parallel mode.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI8 by Integrated Device Technology

7008S55PFI8

Integrated Device Technology

7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7024L55PF8 by Integrated Device Technology

7024L55PF8

Integrated Device Technology

7024L55PF8 by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package with fine pitch and gull wing terminals, suitable for commercial temperature grade applications. With 4096 words and 16-bit memory width, it offers fast parallel data processing in various electronic systems.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S20PF8 by Integrated Device Technology

7025S20PF8

Integrated Device Technology

7025S20PF8 by Integrated Device Technology is an 8Kx16 SRAM with a memory density of 131072 bit. It operates at a nominal voltage of 5V and has an access time of 20ns. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

20 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S25PF8 by Integrated Device Technology

7025S25PF8

Integrated Device Technology

7025S25PF8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with a memory density of 131072 bit. It operates at a max access time of 25ns and has a supply voltage range from 4.5V to 5.5V, making it suitable for high-speed applications requiring fast data access and storage capabilities in commercial-grade environments.

25 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

265 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

709289L9PFI by Integrated Device Technology

709289L9PFI

Integrated Device Technology

709289L9PFI by Integrated Device Technology is a synchronous SRAM with an organization of 64KX16. It operates at a max clock frequency of 66 MHz and has a memory density of 1,048,576 bits. This multi-port SRAM is commonly used in industrial applications requiring high-speed data storage and retrieval.

20 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

66 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

16

3

1

2

100

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.006 Amp

4.5 V

SRAMs

430 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V261L25PFI8 by Integrated Device Technology

70V261L25PFI8

Integrated Device Technology

70V261L25PFI8 by Integrated Device Technology is a 16KX16 MULTI-PORT SRAM with a supply voltage of 3.3V. It operates asynchronously and has a max access time of 25ns. This SRAM is commonly used in industrial applications due to its low profile, fine pitch package style and wide temperature range (up to 85°C).

25 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

262144 bit

MULTI-PORT SRAM

16

3

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V26L25JI8 by Integrated Device Technology

70V26L25JI8

Integrated Device Technology

70V26L25JI8 by Integrated Device Technology is a 16Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features a 25ns access time, 185mA max supply current, and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in a compact chip carrier package.

25 ns

COMMON

S-PQCC-J84

e0

29.2862 mm

262144 bit

MULTI-PORT SRAM

16

1

1

2

84

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC84,1.2SQ

SQUARE

CHIP CARRIER

PARALLEL

225

3.3

Not Qualified

4.572 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

29.2862 mm

70V27L20PFI8 by Integrated Device Technology

70V27L20PFI8

Integrated Device Technology

70V27L20PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package suitable for industrial applications, offering fast access time of 20 ns and common I/O type.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

230 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V27L35PFI8 by Integrated Device Technology

70V27L35PFI8

Integrated Device Technology

70V27L35PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a fast access time of 35ns and is ideal for industrial applications requiring high-speed memory solutions.

35 ns

INTERRUPT FLAGS

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

235 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V37L20PFI8 by Integrated Device Technology

70V37L20PFI8

Integrated Device Technology

70V37L20PFI8 by Integrated Device Technology is a 32KX18 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 20 ns. Ideal for industrial applications requiring high-speed memory operations.

20 ns

INTERRUPT FLAG

COMMON

S-PQFP-G100

e0

14 mm

589824 bit

MULTI-PORT SRAM

18

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V38L20PFI8 by Integrated Device Technology

70V38L20PFI8

Integrated Device Technology

70V38L20PFI8 by Integrated Device Technology is a 64Kx18 MULTI-PORT SRAM with 3.3V supply, operating in ASYNCHRONOUS mode. Featuring a low profile FLATPACK package, 0.5mm terminal pitch, and industrial temperature grade, it's ideal for high-speed parallel memory applications.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V631S12PRFI8 by Integrated Device Technology

70V631S12PRFI8

Integrated Device Technology

70V631S12PRFI8 by Integrated Device Technology is a 256Kx18 MULTI-PORT SRAM with 3.3V nominal voltage, operating in synchronous mode. It features a low profile flatpack package and offers fast access time of 12 ns, making it ideal for industrial applications requiring high-speed memory solutions.

12 ns

COMMON

R-PQFP-G128

e0

20 mm

4718592 bit

MULTI-PORT SRAM

18

3

1

2

128

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP128,.63X.87,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

225

2.5/3.3,3.3

Not Qualified

1.6 mm

.015 Amp

3.15 V

SRAMs

515 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

30

14 mm

7130SA100PF8 by Integrated Device Technology

7130SA100PF8

Integrated Device Technology

7130SA100PF8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it offers an access time of 100ns and features a low profile FLATPACK package. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

100 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PF8 by Integrated Device Technology

7130SA55PF8

Integrated Device Technology

7130SA55PF8 by Integrated Device Technology is a multi-port SRAM with a memory density of 8192 bit. It operates asynchronously and has a max access time of 55 ns. This SRAM is commonly used in applications requiring fast and efficient data storage and retrieval.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

70 Cel

0 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

7130SA55PFI8 by Integrated Device Technology

7130SA55PFI8

Integrated Device Technology

7130SA55PFI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192 bit memory density. Operating at 5V, it offers a max access time of 55ns and features a low profile FLATPACK package suitable for industrial applications. With an asynchronous operating mode and common I/O type, this SRAM is ideal for high-speed parallel data processing tasks.

55 ns

COMMON

S-PQFP-G64

e0

14 mm

8192 bit

MULTI-PORT SRAM

8

3

1

2

64

1024 words

1K

ASYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71321SA55JI8 by Integrated Device Technology

71321SA55JI8

Integrated Device Technology

71321SA55JI8 by Integrated Device Technology is a 2Kx8 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures. Ideal for applications requiring fast data retrieval in harsh environments.

55 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

COMMON

S-PQCC-J52

e0

19.1262 mm

16384 bit

MULTI-PORT SRAM

8

3

1

2

52

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.572 mm

.03 Amp

4.5 V

SRAMs

190 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

7133LA25PFI8 by Integrated Device Technology

7133LA25PFI8

Integrated Device Technology

7133LA25PFI8 by Integrated Device Technology is a 2Kx16 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable memory storage. The device supports asynchronous operation and offers 3-STATE output characteristics.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

32768 bit

MULTI-PORT SRAM

16

3

1

2

100

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

71342LA20J8 by Integrated Device Technology

71342LA20J8

Integrated Device Technology

71342LA20J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 20ns access time, operating at 5V. It features a 52-terminal CHIP CARRIER package and supports ASYNCHRONOUS operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA20PF8 by Integrated Device Technology

71342LA20PF8

Integrated Device Technology

71342LA20PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 20ns and features a low profile flatpack package suitable for commercial temperature grade applications.

20 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25J8 by Integrated Device Technology

71342LA25J8

Integrated Device Technology

71342LA25J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a CMOS technology, 52 terminals in a square chip carrier package, and supports asynchronous operation. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25JI8 by Integrated Device Technology

71342LA25JI8

Integrated Device Technology

71342LA25JI8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM chip with 25ns access time, operating at 5V. It features a 3-STATE output and can withstand industrial temperatures up to 85°C. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.

25 ns

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA25PF8 by Integrated Device Technology

71342LA25PF8

Integrated Device Technology

71342LA25PF8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 4096 words and 32768 bit memory density. Operating at 5V, it offers a max access time of 25ns in commercial temperature grade. Ideal for applications requiring fast and reliable data storage with parallel interface.

25 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

240 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA25PFI8 by Integrated Device Technology

71342LA25PFI8

Integrated Device Technology

71342LA25PFI8 by Integrated Device Technology is a 4Kx8 SRAM with a memory density of 32768 bits. It operates at an industrial temperature grade range from -40 to 85°C, featuring a max access time of 25ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

260 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm

71342LA35J8 by Integrated Device Technology

71342LA35J8

Integrated Device Technology

71342LA35J8 by Integrated Device Technology is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQCC-J52

e0

19.1262 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

52

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC52,.8SQ

SQUARE

CHIP CARRIER

PARALLEL

225

5

Not Qualified

4.57 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

20

19.1262 mm

71342LA35PF8 by Integrated Device Technology

71342LA35PF8

Integrated Device Technology

Integrated Device Technology's 71342LA35PF8 is a 4Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile FLATPACK package and offers 3-STATE output characteristics. Ideal for applications requiring fast and efficient data storage in commercial-grade environments.

35 ns

SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP

COMMON

S-PQFP-G64

e0

14 mm

32768 bit

MULTI-PORT SRAM

8

3

1

2

64

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX8

3-STATE

PLASTIC/EPOXY

LQFP

QFP64,.66SQ,32

SQUARE

FLATPACK, LOW PROFILE

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

220 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

14 mm