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OTHER Other Function Memory ICs 26

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MT72HTS1G72FZ-667H1D6 by Micron Technology

MT72HTS1G72FZ-667H1D6

Micron Technology

Other Memory ICs; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

77309411328 bit

72

240

1073741824 words

1G

95 Cel

0 Cel

1GX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,1.8

Not Qualified

8192

Other Memory ICs

NO

CMOS

OTHER

NO LEAD

1 mm

DUAL

MTFC2GMTEA-WT by Micron Technology

MTFC2GMTEA-WT

Micron Technology

MTFC2GMTEA-WT by Micron Technology is a 153-terminal memory IC with 17179869184 bit density. It operates b/w -25°C to 85°C, supporting power supplies of 1.8/3.3V and 3/3.3V. This square-shaped, surface-mountable IC in plastic/epoxy package is ideal for various applications requiring high memory capacity and temperature resilience.

S-PBGA-B153

17179869184 bit

153

85 Cel

-25 Cel

PLASTIC/EPOXY

FBGA

BGA153,14X14,20

SQUARE

GRID ARRAY, FINE PITCH

1.8/3.3,3/3.3

Not Qualified

Other Memory ICs

YES

OTHER

BALL

.5 mm

BOTTOM

MTFC4GMTEA-WT by Micron Technology

MTFC4GMTEA-WT

Micron Technology

Other Memory ICs; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: FBGA; Package Shape: SQUARE; Maximum Operating Temperature: 85 Cel;

S-PBGA-B153

34359738368 bit

153

85 Cel

-25 Cel

PLASTIC/EPOXY

FBGA

BGA153,14X14,20

SQUARE

GRID ARRAY, FINE PITCH

1.8/3.3,3/3.3

Not Qualified

Other Memory ICs

YES

OTHER

BALL

.5 mm

BOTTOM

MTFC16GLTDV-WT by Micron Technology

MTFC16GLTDV-WT

Micron Technology

MTFC16GLTDV-WT by Micron Technology is a memory IC with 137.4TB density, operating at -25 to 85°C. It features 169 terminals in a grid array package for surface mounting applications. Suitable for various electronic devices requiring high-density memory solutions.

R-PBGA-B169

137438953472 bit

169

85 Cel

-25 Cel

PLASTIC/EPOXY

FBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8/3.3,3/3.3

Not Qualified

Other Memory ICs

YES

OTHER

BALL

.5 mm

BOTTOM

LRI64-W4/1GE by STMicroelectronics

LRI64-W4/1GE

STMicroelectronics

STMicroelectronics LRI64-W4/1GE is a 64-bit memory circuit with CMOS technology. It operates asynchronously in temperatures ranging from -20 °C to 85°C. This surface-mount IC, organized as 64x1, is ideal for applications requiring unencased chip package style and voltage supply of 1.5V to 3V.

X-XUUC-N

64 bit

MEMORY CIRCUIT

1

1

64 words

64

ASYNCHRONOUS

85 Cel

-20 Cel

64X1

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

3 V

1.5 V

YES

CMOS

OTHER

NO LEAD

UPPER

SRIX4K-SBN18/1GE by STMicroelectronics

SRIX4K-SBN18/1GE

STMicroelectronics

SRIX4K-SBN18/1GE by STMicroelectronics is a CMOS memory IC with a density of 4096 bits, operating asynchronously b/w -25 °C and 85°C. It features a supply voltage range of 2.5V to 3.5V and organizes data in 128x32 words. Ideal for compact applications requiring reliable memory solutions.

X-XUUC-N

4096 bit

MEMORY CIRCUIT

32

1

128 words

128

ASYNCHRONOUS

85 Cel

-25 Cel

128X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

Not Qualified

3.5 V

2.5 V

3

YES

CMOS

OTHER

NO LEAD

UPPER

THGBMGG9U4LBAIR by Toshiba

THGBMGG9U4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMGT0U8LBAIG by Toshiba

THGBMGT0U8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG6C1LBAIL by Toshiba

THGBMHG6C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

68719476736 bit

MEMORY CIRCUIT

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG7C1LBAIL by Toshiba

THGBMHG7C1LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PBGA-B153

137438953472 bit

MEMORY CIRCUIT

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG8C2LBAIL by Toshiba

THGBMHG8C2LBAIL

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 8;

R-PBGA-B153

274877906944 bit

MEMORY CIRCUIT

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHG9C4LBAIR by Toshiba

THGBMHG9C4LBAIR

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

R-PBGA-B153

549755813888 bit

MEMORY CIRCUIT

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

THGBMHT0C8LBAIG by Toshiba

THGBMHT0C8LBAIG

Toshiba

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

1099511627776 bit

MEMORY CIRCUIT

8

1

153

137438953472 words

128G

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

CMOS

OTHER

BALL

BOTTOM

MT43A4G40200NFA-S15:A by Micron Technology

MT43A4G40200NFA-S15:A

Micron Technology

Micron Technology's MT43A4G40200NFA-S15:A is a 4GX4 memory IC with 17179869184 bit density. Operating at 1.2V, it features synchronous mode and 896 terminals in a square GRID ARRAY package. Ideal for applications requiring high memory capacity and fast data processing in electronic devices.

IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE

S-PBGA-B896

31 mm

17179869184 bit

MEMORY CIRCUIT

4

1

896

4294967296 words

4G

SYNCHRONOUS

105 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

NOT SPECIFIED

4.2 mm

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

NOT SPECIFIED

31 mm

MT29C4G48MAZBAAKS-5WT by Micron Technology

MT29C4G48MAZBAAKS-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAYBACKD-5WT by Micron Technology

MT29C4G96MAYBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C4G96MAZBACKD-5WT by Micron Technology

MT29C4G96MAZBACKD-5WT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10.5 mm;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5IT by Micron Technology

MT29C8G96MAZBADKD-5IT

Micron Technology

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 137; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

MT29C8G96MAZBADKD-5WT by Micron Technology

MT29C8G96MAZBADKD-5WT

Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology is a 64MX32 memory IC with 67108864 words and 2147483648 bit memory density. Operating at 1.7-1.95V, it has a synchronous mode and thin profile grid array package shape. Ideal for applications requiring high-speed data processing in compact electronic devices.

ALSO ORGANISED AS 128M X 16

R-PBGA-B137

13 mm

2147483648 bit

MEMORY CIRCUIT

32

1

137

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10.5 mm

SLE66R01PNBX1SA1 by Infineon Technologies

SLE66R01PNBX1SA1

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Code: DIE; Package Shape: UNSPECIFIED; Terminal Form: NO LEAD;

X-XUUC-N2

1216 bit

MEMORY CIRCUIT

32

1

2

38 words

38

SYNCHRONOUS

70 Cel

-25 Cel

38X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

OTHER

NO LEAD

UPPER

EMD3D256M08G1-150CBS1R by Everspin Technologies

EMD3D256M08G1-150CBS1R

Everspin Technologies

EMD3D256M08G1-150CBS1R by Everspin: 32MX8 memory IC with 268MB density, operates at 1.5V, synchronous mode. Ideal for applications requiring high-speed and reliable memory storage in compact devices.

R-PBGA-B78

13 mm

268435456 bit

MEMORY CIRCUIT

8

1

78

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

SLE66R01PNNBX1SA2 by Infineon Technologies

SLE66R01PNNBX1SA2

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Code: DIE; Package Shape: UNSPECIFIED; JESD-30 Code: X-XUUC-N2;

X-XUUC-N2

1216 bit

MEMORY CIRCUIT

8

1

2

152 words

152

SYNCHRONOUS

70 Cel

-25 Cel

152X8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

RP-SMLE04DA1 by Panasonic

RP-SMLE04DA1

Panasonic

The Panasonic RP-SMLE04DA1 is a rectangular, surface-mount memory IC with 4GX8 organization and 8-bit memory width. Operating asynchronously from -25°C to 85°C, it offers a memory density of 34.36 Gb for various applications requiring high-speed data storage and retrieval in compact electronic devices.

R-XUUC-N

34359738368 bit

MEMORY CIRCUIT

8

1

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

MT29C4G96MAZBACJG-5WT by Micron Technology

MT29C4G96MAZBACJG-5WT

Micron Technology

MT29C4G96MAZBACJG-5WT by Micron Technology is a 256MX16 Synchronous Flash+SDRAM memory IC with 4294967296 bit density. Operating at 1.8V, it offers a max access time of 25ns and is ideal for applications requiring high-speed data processing in compact electronic devices.

25 ns

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

FLASH+SDRAM

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

.9 mm

Other Memory ICs

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

MT29C4G48MAZBAAKQ-5WT by Micron Technology

MT29C4G48MAZBAAKQ-5WT

Micron Technology

Micron Technology's MT29C4G48MAZBAAKQ-5WT is a 256MX16 memory IC with 4294967296-bit density. Operating at 1.8V, it features synchronous mode and CMOS technology. Ideal for applications requiring high memory capacity in compact devices with very thin profile and fine pitch package style.

MOBILE LPDDR DEVICE ALSO AVAILABLE

S-PBGA-B168

12 mm

4294967296 bit

MEMORY CIRCUIT

16

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.75 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

AF8GUD3-OEM by Atp Electronics

AF8GUD3-OEM

Atp Electronics

AF8GUD3-OEM by Atp Electronics is an 8GX8 memory IC with a memory density of 68719476736 bit. It operates b/w -25 to 85 °C and features CMOS technology. Ideal for applications requiring high memory capacity in a compact, surface-mount package style.

X-XUUC-N

68719476736 bit

MEMORY CIRCUIT

8

1

8589934592 words

8G

85 Cel

-25 Cel

8GX8

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

YES

CMOS

OTHER

NO LEAD

UPPER