Loading...

FBGA Flash Memory 28

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
RD48F4400P0VBQ0A by Micron Technology

RD48F4400P0VBQ0A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

85 ns

BOTTOM

YES

YES

NO

R-PBGA-B88

536870912 bit

FLASH

16

8, 510

88

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

FBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

NOR TYPE

SST39VF1601-70-4C-B3KE-T by Microchip Technology

SST39VF1601-70-4C-B3KE-T

Microchip Technology

SST39VF1601-70-4C-B3KE-T by Microchip Technology is a 1MX16 NOR flash memory with 512 sectors and 3V nominal voltage. It operates in asynchronous mode, has 100000 write/erase cycles endurance, and supports common flash interface. Ideal for applications requiring fast access time, such as embedded systems and consumer electronics.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

16777216 bit

FLASH

16

1

1

512

48

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F8G16ADBDAH4:D by Micron Technology

MT29F8G16ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G01AAADDHC-IT:D by Micron Technology

MT29F4G01AAADDHC-IT:D

Micron Technology

MT29F4G01AAADDHC-IT:D by Micron Technology is a flash memory with 512MX8 organization and 4294967296 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max clock frequency of 50 MHz. It is commonly used in industrial applications requiring high endurance and reliable data storage.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

260

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

HARDWARE

MT29F4G01AAADDHC:D by Micron Technology

MT29F4G01AAADDHC:D

Micron Technology

MT29F4G01AAADDHC:D by Micron Technology is a 512MX8 SLC NAND flash memory with 4294967296 bit density. It operates at 3/3.3V, has 100000 Write/Erase cycles endurance, and supports SPI serial bus type. Ideal for applications requiring high-speed data storage in commercial temperature environments.

50 MHz

10

100000 Write/Erase Cycles

R-PBGA-B63

4294967296 bit

FLASH

8

63

536870912 words

512M

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

SERIAL

3/3.3

Not Qualified

SPI

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

SLC NAND TYPE

HARDWARE

MT29F1G16ABBDAH4-ITX:D by Micron Technology

MT29F1G16ABBDAH4-ITX:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

25 ns

YES

NO

R-PBGA-B63

e1

FLASH

16

1K

63

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

SST39VF3201C-70-4I-B3KE-T by Microchip Technology

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

SST39VF3201C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications requiring high endurance (100K cycles) and fast data polling. Features 8 sectors, 2097152 words, and common flash interface for parallel programming.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE-T by Microchip Technology

SST39VF3202C-70-4I-B3KE-T

Microchip Technology

SST39VF3202C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, featuring 100K cycles endurance and 2097152 words capacity in a compact GRID ARRAY package.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF6401B-70-4C-B1KE-T by Microchip Technology

SST39VF6401B-70-4C-B1KE-T

Microchip Technology

SST39VF6401B-70-4C-B1KE-T by Microchip: 3V NOR Flash Memory, 4Mx16 organization, 2K sectors. Ideal for commercial applications requiring fast access time and high endurance with a max operating temperature of 70°C.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

10 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

YES

NOR TYPE

8 mm

SST38VF6401-90-5I-B3KE-T by Microchip Technology

SST38VF6401-90-5I-B3KE-T

Microchip Technology

SST38VF6401-90-5I-B3KE-T by Microchip: 4MX16 NOR Flash Memory with 1K sectors, 4194304 words, and 100000 Write/Erase Cycles. Ideal for industrial applications requiring fast access time (90 ns) and low standby current (0.00003 Amp).

90 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

1

1K

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K

.00003 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F2G08ABAEAH4-ITX:E by Micron Technology

MT29F2G08ABAEAH4-ITX:E

Micron Technology

MT29F2G08ABAEAH4-ITX:E by Micron Technology is a 256MX8 SLC NAND flash memory with 2K sectors, 128K sector size, and 268M words. It operates at -40 to 85 °C, with 0.8mm terminal pitch and 0.0001A standby current. Ideal for industrial applications requiring fast access time and low power consumption.

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBEAH4-ITX:E by Micron Technology

MT29F2G08ABBEAH4-ITX:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F4G08ABADAH4-ITX:D by Micron Technology

MT29F4G08ABADAH4-ITX:D

Micron Technology

MT29F4G08ABADAH4-ITX:D by Micron Technology is a 512Mx8 SLC NAND flash memory with 4K sectors and 128K word sector size. Operating at -40 to 85°C, it has a peak reflow temp of 260°C and consumes max 35mA current. Ideal for industrial applications requiring fast access time of 25ns and high memory density of 4294967296 bits.

25 ns

YES

NO

R-PBGA-B63

e1

4294967296 bit

FLASH

8

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F8G16ADADAH4:D by Micron Technology

MT29F8G16ADADAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

8K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1K

PARALLEL

3/3.3

Not Qualified

YES

64K

.00005 Amp

Flash Memories

20 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBFAH4:F by Micron Technology

MT29F2G08ABBFAH4:F

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Toggle Bit: NO;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

PF48F4000P0ZTQEJ by Micron Technology

PF48F4000P0ZTQEJ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 88; Package Code: FBGA; Package Shape: RECTANGULAR; Boot Block: TOP;

100 ns

TOP

YES

YES

NO

R-PBGA-B88

e1

268435456 bit

FLASH

16

4,255

88

16777216 words

16M

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

FBGA

BGA88,8X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

16K,64K

.00021 Amp

Flash Memories

31 mA

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

NOR TYPE

MT29F8G16ABBCAH4:C by Micron Technology

MT29F8G16ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4:C by Micron Technology

MT29F16G08ADBCAH4:C

Micron Technology

MT29F16G08ADBCAH4:C by Micron Technology is a 1.8V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates b/w 0-70°C, has a max standby current of 0.00005A, and is suitable for commercial applications requiring fast access times and low power consumption.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADBCAH4:C by Micron Technology

MT29F16G16ADBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

30 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G08ADACAH4:C by Micron Technology

MT29F16G08ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Command User Interface: YES;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

8

8K

63

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

256K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4-IT:C by Micron Technology

MT29F8G16ABACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABBCAH4-IT:C by Micron Technology

MT29F8G16ABBCAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4-IT:C by Micron Technology

MT29F16G16ADACAH4-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words Code: 1G;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F16G16ADACAH4:C by Micron Technology

MT29F16G16ADACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA63,10X12,32;

25 ns

YES

NO

R-PBGA-B63

17179869184 bit

FLASH

16

8K

63

1073741824 words

1G

70 Cel

0 Cel

1GX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABBCAH4:C by Micron Technology

MT29F8G08ABBCAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Maximum Access Time: 30 ns;

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G16ABACAH4:C by Micron Technology

MT29F8G16ABACAH4:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; No. of Words: 536870912 words;

25 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

16

4K

63

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

MT29F8G08ABBCAH4-IT:C by Micron Technology

MT29F8G08ABBCAH4-IT:C

Micron Technology

MT29F8G08ABBCAH4-IT:C by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, 4K sectors, and 256K sector size. It operates in industrial temperatures (-40 to 85 °C) with parallel interface and 0.8mm terminal pitch. Ideal for applications requiring high memory density and fast access times.

30 ns

YES

NO

R-PBGA-B63

8589934592 bit

FLASH

8

4K

63

1073741824 words

1G

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4K

PARALLEL

1.8

1.8

Not Qualified

YES

256K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE