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8 EEPROM 614

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M93S66-WMN6T by STMicroelectronics

M93S66-WMN6T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M24C04-BN6 by STMicroelectronics

M24C04-BN6

STMicroelectronics

The STMicroelectronics M24C04-BN6 is an EEPROM with 512x8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M95080-MN6T by STMicroelectronics

M95080-MN6T

STMicroelectronics

The STMicroelectronics M95080-MN6T is an EEPROM with 1KX8 organization, SPI serial bus type, and 8192 bit memory density. It operates at a max clock frequency of 5 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.00001 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M95160-MN6T by STMicroelectronics

M95160-MN6T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.00001 Amp

EEPROMs

4 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M24C02-MN6T by STMicroelectronics

M24C02-MN6T

STMicroelectronics

The STMicroelectronics M24C02-MN6T is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85 °C) with a max clock frequency of 0.4 MHz. Ideal for applications requiring serial communication and write protection features.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6T by STMicroelectronics

M24C04-MN6T

STMicroelectronics

STMicroelectronics' M24C04-MN6T is an EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage with a small footprint.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6 by STMicroelectronics

M24C04-MN6

STMicroelectronics

STMicroelectronics' M24C04-MN6 is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M95256-WBN6 by STMicroelectronics

M95256-WBN6

STMicroelectronics

M95256-WBN6 by STMicroelectronics is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 100000 write/erase cycles. It operates at a max clock frequency of 5 MHz and has a temperature range of -40 to 85°C. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M95128-WMN6T by STMicroelectronics

M95128-WMN6T

STMicroelectronics

M95128-WMN6T by STMicroelectronics is a 16KX8 EEPROM with SPI serial bus, 131072 bit memory density, and 100000 write/erase cycles. It operates at -40 to 85 °C with a clock frequency of up to 5 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

XC1701LPD8C by Xilinx

XC1701LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8C by Xilinx

XC1701PD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8I by Xilinx

XC1701PD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8C by Xilinx

XC17512LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8I by Xilinx

XC17512LPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

25LC512-M/SN by Microchip Technology

25LC512-M/SN

Microchip Technology

25LC512-M/SN by Microchip is a serial EEPROM with 64KX8 organization, operating at up to 10 MHz. It has a MILITARY temperature grade and offers 1000000 Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory in harsh environments.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

25LC512T-M/SN by Microchip Technology

25LC512T-M/SN

Microchip Technology

25LC512T-M/SN by Microchip Technology is a 64KX8 EEPROM with SPI serial bus type, operating at 5V. It offers 1000000 write/erase cycles, -55 to 125 °C temperature range, and synchronous operation. Ideal for applications requiring small outline package style and high endurance memory.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

3

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

FM93CS56LN by Fairchild Semiconductor

FM93CS56LN

Fairchild Semiconductor

FM93CS56LN by Fairchild Semiconductor is a 2048-bit EEPROM with 128x16 organization. It operates at 0.25 MHz clock frequency and has a max write cycle time of 15 ms. Suitable for applications requiring low power consumption and reliable non-volatile memory storage.

.25 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.817 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.08 mm

MICROWIRE

.00001 Amp

EEPROMs

1 mA

5.5 V

2.7 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

15 ms

HARDWARE/SOFTWARE

M34C02-LDW6T by STMicroelectronics

M34C02-LDW6T

STMicroelectronics

M34C02-LDW6T by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V to 5.5V and featuring I2C control for easy integration. It supports up to 1M write/erase cycles and operates in temperatures from -40 °C to 85°C. Ideal for industrial applications requiring reliable data retention and low power consumption.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2.5/5

Not Qualified

1.2 mm

I2C

.0000005 Amp

EEPROMs

2 mA

5.5 V

2.2 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE/SOFTWARE

24AA128-I/SM by Microchip Technology

24AA128-I/SM

Microchip Technology

24AA128-I/SM by Microchip Technology is an EEPROM with 16KX8 organization, I2C serial bus type, and 1000000 Write/Erase Cycles endurance. It operates at a max clock frequency of 0.4 MHz and is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24AA64T-I/SM by Microchip Technology

24AA64T-I/SM

Microchip Technology

24AA64T-I/SM by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.4 MHz, and uses I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64-E/SM by Microchip Technology

24LC64-E/SM

Microchip Technology

24LC64-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, operating at 4.5V and -40 to 125 °C temperature range. It features I2C control byte 1010DDDR, offers 1000000 Write/Erase cycles endurance, and is ideal for automotive applications due to AEC-Q100 screening level.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64T-E/SM by Microchip Technology

24LC64T-E/SM

Microchip Technology

24LC64T-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and is ideal for automotive applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

M24128-BWDW6T by STMicroelectronics

M24128-BWDW6T

STMicroelectronics

M24128-BWDW6T by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (2.5V-5.5V), operates in -40 °C to 85°C, and supports 1M write/erase cycles, ideal for industrial applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/5

Not Qualified

1.2 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24128-BWMN6 by STMicroelectronics

M24128-BWMN6

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24256-BWMN6T by STMicroelectronics

M24256-BWMN6T

STMicroelectronics

M24256-BWMN6T by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 2.5-5.5V and supports up to 100k write/erase cycles, ensuring reliability in harsh environments. Its compact SOIC package allows easy surface mounting.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34D64-WMN6T by STMicroelectronics

M34D64-WMN6T

STMicroelectronics

M34D64-WMN6T by STMicroelectronics is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1000000 Write/Erase Cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M95020-MN6 by STMicroelectronics

M95020-MN6

STMicroelectronics

M95020-MN6 by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 10MHz and SPI serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95040-WMN6 by STMicroelectronics

M95040-WMN6

STMicroelectronics

M95040-WMN6 by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5 MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1,000,000 Write/Erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

XC17V01VO8C by Xilinx

XC17V01VO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

15 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

TSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17V01VO8I by Xilinx

XC17V01VO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

15 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

TSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

24LC16B-E/ST by Microchip Technology

24LC16B-E/ST

Microchip Technology

24LC16B-E/ST by Microchip Tech is a 2Kx8 EEPROM with 1000000 Write/Erase Cycles. Operating at -40 to 125 °C, it has a Serial I2C interface and supports up to 0.4 MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.4 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24LC64XT-E/ST by Microchip Technology

24LC64XT-E/ST

Microchip Technology

24LC64XT-E/ST by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

XC17S100APD8C by Xilinx

XC17S100APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: Tin/Lead (Sn85Pb15);

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S100APD8I by Xilinx

XC17S100APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 15 mA;

COMMON

R-PDIP-T8

e0

9.3599 mm

781216 bit

CONFIGURATION MEMORY

1

1

1

8

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S100AVO8C by Xilinx

XC17S100AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Width: 3.9 mm;

COMMON

R-PDSO-G8

e0

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S100AVO8I by Xilinx

XC17S100AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 781216 bit;

COMMON

R-PDSO-G8

e0

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S150APD8C by Xilinx

XC17S150APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150APD8I by Xilinx

XC17S150APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

COMMON

R-PDIP-T8

e0

9.3599 mm

1040096 bit

CONFIGURATION MEMORY

1

1

1

8

1040096 words

1040096

SYNCHRONOUS

85 Cel

-40 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150AVO8C by Xilinx

XC17S150AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Width: 1;

COMMON

R-PDSO-G8

e0

4.9 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

8

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15APD8C by Xilinx

XC17S15APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15APD8I by Xilinx

XC17S15APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDIP-T8

e0

9.3599 mm

197696 bit

CONFIGURATION MEMORY

1

1

1

8

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S15AVO8C by Xilinx

XC17S15AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

COMMON

R-PDSO-G8

e0

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15AVO8I by Xilinx

XC17S15AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

COMMON

R-PDSO-G8

e0

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200APD8C by Xilinx

XC17S200APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Width: 7.62 mm;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APD8I by Xilinx

XC17S200APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE;

COMMON

R-PDIP-T8

e0

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200AVO8C by Xilinx

XC17S200AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Standby Current: .001 Amp;

COMMON

R-PDSO-G8

e0

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVO8I by Xilinx

XC17S200AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

COMMON

R-PDSO-G8

e0

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30APD8C by Xilinx

XC17S30APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;

COMMON

R-PDIP-T8

e0

9.3599 mm

336768 bit

CONFIGURATION MEMORY

1

1

1

8

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm