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DDR3L DRAM DRAM 131

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41K256M4DA-107:J by Micron Technology

MT41K256M4DA-107:J

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

1073741824 bit

DDR3L DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

DRAMs

162 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K64M16JT-125:G by Micron Technology

MT41K64M16JT-125:G

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Organization: 64MX16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K64M16TW-125:J by Micron Technology

MT41K64M16TW-125:J

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Memory Width: 16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K256M16HA-125AAT:E by Micron Technology

MT41K256M16HA-125AAT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-125AIT:E by Micron Technology

MT41K256M16HA-125AIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125AIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-performance applications in automotive electronics.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125AAT:E by Micron Technology

MT41K512M8RH-125AAT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Memory Density: 4294967296 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125AIT:E by Micron Technology

MT41K512M8RH-125AIT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-125MAIT:E by Micron Technology

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125MAIT:E by Micron Technology

MT41K512M8RH-125MAIT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16TW-107AT:P by Micron Technology

MT41K256M16TW-107AT:P

Micron Technology

Micron Technology's MT41K256M16TW-107AT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile grid array packages.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M16VRN-107AAT:P by Micron Technology

MT41K512M16VRN-107AAT:P

Micron Technology

Micron Technology's MT41K512M16VRN-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at up to 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

.022 Amp

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

W632GU6NB11I by Winbond Electronics

W632GU6NB11I

Winbond Electronics

Winbond Electronics' W632GU6NB11I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style, suitable for industrial applications due to its wide temperature range of -40 to 95°C and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GU6NB12I by Winbond Electronics

W632GU6NB12I

Winbond Electronics

The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution

IS43TR16512S2DL-125KBLI

Integrated Silicon Solution

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

260

8192

1.4 mm

YES

4,8

.044 Amp

1.283 V

246 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16VRN-107AAT:PTR by Micron Technology

MT41K512M16VRN-107AAT:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

.022 Amp

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M16VRN-107AIT:PTR by Micron Technology

MT41K512M16VRN-107AIT:PTR

Micron Technology

Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

934.57 MHz

COMMON

4,8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

4,8

.022 Amp

1.283 V

304 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M8DA-093:PTR by Micron Technology

MT41K512M8DA-093:PTR

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

1066 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

8

.012 Amp

150 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR

Integrated Silicon Solution

IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

934.5 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.028 Amp

254 mA

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution

IS43TR16256BL-125KBLI-TR

Integrated Silicon Solution

IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.028 Amp

228 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

IS43TR16256BL-125KBL-TR by Integrated Silicon Solution

IS43TR16256BL-125KBL-TR

Integrated Silicon Solution

IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR

Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

.028 Amp

228 mA

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

AS4C128M16D3LC-12BINTR by Alliance Memory

AS4C128M16D3LC-12BINTR

Alliance Memory

Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

AUTO REFRESH, SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

1 mm

YES

4,8

.015 Amp

1.283 V

240 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

MT41K128M8DA-107AIT:J by Micron Technology

MT41K128M8DA-107AIT:J

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Memory Width: 8;

MULTI BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

1073741824 bit

DDR3L DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

128MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K1G4RG-107:N by Micron Technology

MT41K1G4RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K256M16LY-107:N by Micron Technology

MT41K256M16LY-107:N

Micron Technology

Micron Technology's MT41K256M16LY-107:N is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13.5 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT41K512M8RG-093:N by Micron Technology

MT41K512M8RG-093:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT41K512M8RG-107:N by Micron Technology

MT41K512M8RG-107:N

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.6 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

MT41K1G8SN-107:A by Micron Technology

MT41K1G8SN-107:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-107IT:A by Micron Technology

MT41K1G8SN-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K1G8SN-125:A by Micron Technology

MT41K1G8SN-125:A

Micron Technology

Micron Technology's MT41K1G8SN-125:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K1G8SN-125IT:A by Micron Technology

MT41K1G8SN-125IT:A

Micron Technology

Micron Technology's MT41K1G8SN-125IT:A is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K2G4SN-125:A by Micron Technology

MT41K2G4SN-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-107:A by Micron Technology

MT41K512M16HA-107:A

Micron Technology

Micron Technology's MT41K512M16HA-107:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K512M16HA-107IT:A by Micron Technology

MT41K512M16HA-107IT:A

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16HA-125:A by Micron Technology

MT41K512M16HA-125:A

Micron Technology

Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT41K512M16HA-125IT:A by Micron Technology

MT41K512M16HA-125IT:A

Micron Technology

MT41K512M16HA-125IT:A by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41K1G16DGA-125:A by Micron Technology

MT41K1G16DGA-125:A

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

17179869184 bit

DDR3L DRAM

16

1

1

96

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.425 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K1G8RKB-107:N by Micron Technology

MT41K1G8RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: DUAL BANK PAGE BURST; Self Refresh: YES;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K2G4RKB-107:N by Micron Technology

MT41K2G4RKB-107:N

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

SELF REFRESH

R-PBGA-B78

10.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

2GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

AS4C512M16D3L-12BCN by Alliance Memory

AS4C512M16D3L-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.011 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

AS4C512M16D3L-12BIN by Alliance Memory

AS4C512M16D3L-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.011 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-125XIT:E by Micron Technology

MT41K256M16HA-125XIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125XIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in grid array package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT41K1G4DA-107:P by Micron Technology

MT41K1G4DA-107:P

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT41K512M8DA-093IT:P by Micron Technology

MT41K512M8DA-093IT:P

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35; Self Refresh: YES;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT41K512M8DA-125:P by Micron Technology

MT41K512M8DA-125:P

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT41K512M8DA-107AIT:P by Micron Technology

MT41K512M8DA-107AIT:P

Micron Technology

Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

934.57 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

1.2 mm

YES

8

.011 Amp

146 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

AS4C1G8MD3L-12BCN by Alliance Memory

AS4C1G8MD3L-12BCN

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-PBGA-B78

13.2 mm

8589934592 bit

DDR3L DRAM

8

3

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm