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YES PIN Diodes 106

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAP1321-04,215 by NXP Semiconductors

BAP1321-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.45 pF

.42 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

TO-236AB

R-PDSO-G3

e3

.5 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-03,115 by NXP Semiconductors

BAP50-03,115

NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.

50 V

SINGLE

.55 pF

.55 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-04W,115 by NXP Semiconductors

BAP50-04W,115

NXP Semiconductors

The NXP Semiconductors BAP50-04W,115 is a PIN diode with 2 elements in series connected configuration. It has a max diode capacitance of 0.6 pF and operates b/w -65°C to 150°C. Ideal for applications requiring high-speed switching and RF signal routing in small outline packages.

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05,215 by NXP Semiconductors

BAP50-05,215

NXP Semiconductors

The NXP Semiconductors BAP50-05,215 is a PIN diode with common cathode, 2 elements. It has a max diode capacitance of 0.6 pF and operates b/w -65 to 150 °C. Ideal for applications requiring high-frequency switching such as RF switches and attenuators due to its low forward resistance and breakdown voltage of 50 V.

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.6 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05W,115 by NXP Semiconductors

BAP50-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-02,115 by NXP Semiconductors

BAP63-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.36 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP63-03,115 by NXP Semiconductors

BAP63-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-05W,115 by NXP Semiconductors

BAP63-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

.31 us

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-04,215 by NXP Semiconductors

BAP64-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-05,215 by NXP Semiconductors

BAP64-05,215

NXP Semiconductors

The NXP Semiconductors BAP64-05,215 is a PIN diode with common cathode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. Ideal for attenuator and switching applications, it can withstand temperatures from -65 to 150°C while offering a max power dissipation of 0.25 W.

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP65-03,115 by NXP Semiconductors

BAP65-03,115

NXP Semiconductors

BAP65-03,115 by NXP Semiconductors is a single PIN diode with a max diode capacitance of 0.9 pF. It is used in applications such as attenuators and switching, with a max operating temperature of 150°C and a min operating temperature of -65°C.

ATTENUATOR; SWITCHING

30 V

SINGLE

.9 pF

.65 pF

SILICON

.9 ohm

5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.17 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAT18,215 by NXP Semiconductors

BAT18,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

35 V

SINGLE

1 pF

.75 pF

SILICON

.7 ohm

5 mA

100 MHz

PIN DIODE

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

20 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BA779E6327 by Infineon Technologies

BA779E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 0 V; Diode Resistive Test Current: 1.5 mA; Nominal Minority Carrier Lifetime: 1.6 us; Maximum Diode Forward Resistance: 40 ohm;

50 V

.26 pF

40 ohm

1.5 mA

100 MHz

PIN DIODE

1.6 us

1

150 Cel

0 V

PIN Diodes

YES

BAR65-02LE6327 by Infineon Technologies

BAR65-02LE6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Diode Resistive Test Frequency: 100 MHz; Nominal Minority Carrier Lifetime: .08 us; No. of Elements: 1; Maximum Operating Temperature: 125 Cel;

.5 pF

.95 ohm

5 mA

100 MHz

PIN DIODE

.08 us

1

1

125 Cel

260

0 V

PIN Diodes

YES

BAP70AM,135 by NXP Semiconductors

BAP70AM,135

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.25 pF

SILICON

1.9 ohm

PIN DIODE

1.1 V

R-PDSO-G6

e3

1.25 us

1

4

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.3 W

Not Qualified

50 V

.1 uA

50 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-04W,115 by NXP Semiconductors

BAP70-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

.6 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.25 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.26 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-03,115 by NXP Semiconductors

BAP70-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR

50 V

SINGLE

.25 pF

.57 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1.25 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63LX,315 by NXP Semiconductors

BAP63LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.3 pF

.34 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.32 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.135 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP55L,315 by NXP Semiconductors

BAP55L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

SINGLE

.28 pF

SILICON

.7 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.28 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51LX,315 by NXP Semiconductors

BAP51LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

.3 pF

SILICON

1.5 ohm

500 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-N2

e3

.55 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.14 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

DUAL

30

BAP51L,315 by NXP Semiconductors

BAP51L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

SILICON

1.5 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.55 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51-04W,115 by NXP Semiconductors

BAP51-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.55 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAP142LX,315 by NXP Semiconductors

BAP142LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.26 pF

.25 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.11 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

BOTTOM

30

BAP1321LX,315 by NXP Semiconductors

BAP1321LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.38 pF

.32 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

.48 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

ASML-5822-BLKG by Broadcom

ASML-5822-BLKG

Broadcom

ASML-5822-BLKG by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5822-TR1G by Broadcom

ASML-5822-TR1G

Broadcom

ASML-5822-TR1G by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5822-TR2G by Broadcom

ASML-5822-TR2G

Broadcom

ASML-5822-TR2G by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5829-BLKG by Broadcom

ASML-5829-BLKG

Broadcom

ASML-5829-BLKG by Broadcom is a PIN diode with 2 elements, 0.375 pF capacitance, and 2.5 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 100 V and operates up to 150°C. The diode features positive-intrinsic-negative technology and comes in a small outline package for surface mount assembly.

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

ASML-5829-TR1G by Broadcom

ASML-5829-TR1G

Broadcom

Broadcom's ASML-5829-TR1G is a PIN diode with 2 elements, 0.375 pF capacitance, and 2.5 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 100V and operates up to 150°C. The diode features positive-intrinsic-negative technology, matte tin finish, and gull wing terminal form for surface mount installation.

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

ASML-5829-TR2G by Broadcom

ASML-5829-TR2G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

SMP1345-079LF by Skyworks Solutions

SMP1345-079LF

Skyworks Solutions

SMP1345-079LF by Skyworks Solutions is a PIN diode with a single configuration, operating in the C band frequency. It features a max diode capacitance of 0.2 pF and forward resistance of 2 ohm, suitable for applications like attenuators and switching due to its positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

ISOLATED

SINGLE

.2 pF

SILICON

2 ohm

PIN DIODE

C BAND

R-PDSO-G2

e3

.1 us

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

Matte Tin (Sn)

GULL WING

DUAL

40

SMP1345-518 by Skyworks Solutions

SMP1345-518

Skyworks Solutions

SMP1345-518 by Skyworks Solutions is a PIN diode with 4 elements in a ring configuration. It operates in the C band frequency range and has a max diode capacitance of 0.2 pF. This diode is commonly used in attenuator and switching applications due to its low forward resistance of 2 ohm.

ATTENUATOR; SWITCHING

ISOLATED

RING, 4 ELEMENTS

.2 pF

SILICON

2 ohm

PIN DIODE

C BAND

R-PBGA-B4

.1 us

1

4

4

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

BUTT

BOTTOM

30

DSG9500-000 by Skyworks Solutions

DSG9500-000

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; LIMITER; SWITCHING

200 V

SINGLE

.02 pF

SILICON

4 ohm

PIN DIODE

L BAND TO KU BAND

R-XDMW-F2

.25 us

1

2

UNSPECIFIED

RECTANGULAR

MICROWAVE

NOT SPECIFIED

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

NOT SPECIFIED

BAR50-03WE6327 by Infineon Technologies

BAR50-03WE6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Diode Capacitance: .24 pF; Minimum Breakdown Voltage: 50 V; Reverse Test Voltage: 1 V; Peak Reflow Temperature (C): 260;

50 V

.24 pF

PIN DIODE

1.1 us

1

1

125 Cel

260

1 V

PIN Diodes

YES

MMBV3700LT1G by Onsemi

MMBV3700LT1G

Onsemi

MMBV3700LT1G by Onsemi is a PIN diode with 1pF capacitance, 20V reverse test voltage, and 1 ohm forward resistance. It is used for very high-frequency switching applications due to its positive-intrinsic-negative technology and small outline package style. Operating at up to 125°C, it offers efficient performance in various electronic systems.

HIGH VOLTAGE

SWITCHING

200 V

SINGLE

1 pF

1 pF

SILICON

1 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

20 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

MMVL3401T1G by Onsemi

MMVL3401T1G

Onsemi

MMVL3401T1G by Onsemi is a PIN diode with a max forward resistance of 0.7 ohm and a diode capacitance of 1 pF, suitable for very high frequency applications like switching. It operates at temperatures up to 150 °C, has a breakdown voltage of 35V, and features a gull wing terminal form in a small outline package style.

SWITCHING

35 V

SINGLE

1 pF

SILICON

.7 ohm

10 mA

100 MHz

PIN DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

MMVL3700T1G by Onsemi

MMVL3700T1G

Onsemi

MMVL3700T1G by Onsemi is a PIN diode with single configuration, suitable for very high frequency applications. It has a max diode capacitance of 1 pF and forward resistance of 1 ohm, making it ideal for switching operations. With a small outline package style and operating temperature up to 150 °C, this diode offers efficient performance in various electronic circuits.

HIGH VOLTAGE

SWITCHING

200 V

SINGLE

1 pF

SILICON

1 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

SMP1320-077LF by Skyworks Solutions

SMP1320-077LF

Skyworks Solutions

SMP1320-077LF by Skyworks Solutions is a PIN diode for high frequency to S band applications. It has a max forward resistance of 0.9 ohm and reverse test voltage of 30V, making it suitable for switching operations. With a small outline package style and isolated case connection, it can handle up to 0.25W power dissipation at temperatures up to 150°C.

SWITCHING

50 V

ISOLATED

SINGLE

.45 pF

.3 pF

SILICON

.9 ohm

10 mA

100 MHz

PIN DIODE

HIGH FREQUENCY TO S BAND

R-PDSO-G3

e3

.4 us

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

GULL WING

DUAL

40

SMP1345-004LF by Skyworks Solutions

SMP1345-004LF

Skyworks Solutions

SMP1345-004LF by Skyworks Solutions is a PIN diode with common cathode, 2 elements, and 0.2 pF capacitance. It operates in C band for applications like attenuators and switches. The diode has a max forward resistance of 2 ohm and can handle up to 0.25 W power dissipation.

ATTENUATOR; SWITCHING

ISOLATED

COMMON CATHODE, 2 ELEMENTS

.2 pF

SILICON

2 ohm

PIN DIODE

C BAND

R-PDSO-G3

e3

.1 us

1

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

Matte Tin (Sn)

GULL WING

DUAL

40

HSMP-389Z-BLKG by Broadcom

HSMP-389Z-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

100 V

SINGLE

.3 pF

.3 pF

SILICON

2.5 ohm

5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.2 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

5 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

HSMP-389Z-TR1G by Broadcom

HSMP-389Z-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

100 V

SINGLE

.3 pF

.3 pF

SILICON

2.5 ohm

5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.2 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

5 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

MA4L021-120 by M/a-com Technology Solutions

MA4L021-120

M/a-com Technology Solutions

MA4L021-120 by M/a-com Tech: PIN Diode for high freq to Ku band apps. Ceramic-metal package, single config, end terminal position. Breakdown voltage 35V, max temp 175°C, positive-intrinsic-negative tech.

LOW LEAKAGE

LIMITER

35 V

SINGLE

SILICON

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

1

2

175 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

NOT SPECIFIED

MADP-030025-13140P by M/a-com Technology Solutions

MADP-030025-13140P

M/a-com Technology Solutions

MADP-030025-13140P by M/a-com: PIN Diode with 0.56 pF capacitance, 0.65 ohm forward resistance, and 2.8 us carrier lifetime. Ideal for switching applications at up to 175°C operating temperature. Chip carrier package in glass material for surface mount configuration.

SWITCHING

ISOLATED

SINGLE

.56 pF

SILICON

.65 ohm

PIN DIODE

R-LBCC-N2

2.8 us

1

2

175 Cel

GLASS

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

HSMP-381Z-BLKG by Broadcom

HSMP-381Z-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR

100 V

SINGLE

.35 pF

.35 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1.5 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

HSMP-381Z-TR1G by Broadcom

HSMP-381Z-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR

100 V

SINGLE

.35 pF

.35 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1.5 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

HSMP-386Z-BLKG by Broadcom

HSMP-386Z-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

50 V

SINGLE

.2 pF

SILICON

3 ohm

10 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.5 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

HSMP-386Z-TR1G by Broadcom

HSMP-386Z-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

50 V

SINGLE

.2 pF

SILICON

3 ohm

10 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.5 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

HSMP-389Y-BLKG by Broadcom

HSMP-389Y-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

100 V

SINGLE

.3 pF

.3 pF

SILICON

3.8 ohm

1 mA

100 MHz

PIN DIODE

R-PDSO-F2

e3

.2 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

5 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Matte Tin (Sn)

FLAT

DUAL

20