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YES PIN Diodes 106

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BAR65-02V-E6327 by Infineon Technologies

BAR65-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Diode Resistive Test Current: 5 mA; Nominal Minority Carrier Lifetime: .08 us; Nominal Diode Capacitance: .5 pF;

.5 pF

.95 ohm

5 mA

100 MHz

PIN DIODE

.08 us

1

125 Cel

260

0 V

PIN Diodes

YES

BAR67-02V-E6327 by Infineon Technologies

BAR67-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 5 V; Maximum Operating Temperature: 125 Cel; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: .35 pF;

150 V

.35 pF

PIN DIODE

.7 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAR64-02V-E6327 by Infineon Technologies

BAR64-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Diode Forward Resistance: 20 ohm; Minimum Breakdown Voltage: 150 V; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 125 Cel;

150 V

.17 pF

20 ohm

1 mA

100 MHz

PIN DIODE

1.55 us

1

125 Cel

260

0 V

PIN Diodes

YES

BAR50-02L-E6327 by Infineon Technologies

BAR50-02L-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 125 Cel; Nominal Diode Capacitance: .24 pF; Minimum Breakdown Voltage: 50 V; Nominal Minority Carrier Lifetime: 1.1 us;

50 V

.24 pF

PIN DIODE

1.1 us

125 Cel

260

1 V

PIN Diodes

YES

BAR50-02V-E6327 by Infineon Technologies

BAR50-02V-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: 1.1 us; Peak Reflow Temperature (C): 260; Minimum Breakdown Voltage: 50 V; Moisture Sensitivity Level (MSL): 1;

50 V

.24 pF

PIN DIODE

1.1 us

1

125 Cel

260

1 V

PIN Diodes

YES

BAR63-02V-E6327 by Infineon Technologies

BAR63-02V-E6327

Infineon Technologies

Infineon's BAR63-02V-E6327 is a PIN diode with 5V reverse test voltage, 150°C max operating temp, and 2 ohm forward resistance. Ideal for RF switches, attenuators, and phase shifters in applications requiring high-speed switching and low capacitance.

50 V

.25 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

150 Cel

260

5 V

PIN Diodes

YES

BAR63-02W-E6327 by Infineon Technologies

BAR63-02W-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Nominal Diode Capacitance: .3 pF; Maximum Operating Temperature: 125 Cel; Minimum Breakdown Voltage: 50 V; Diode Resistive Test Frequency: 100 MHz;

50 V

.3 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAR63-02W-E6433 by Infineon Technologies

BAR63-02W-E6433

Infineon Technologies

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 5 V; Minimum Breakdown Voltage: 50 V; Nominal Diode Capacitance: .3 pF; Moisture Sensitivity Level (MSL): 1;

50 V

.3 pF

2 ohm

5 mA

100 MHz

PIN DIODE

.075 us

1

125 Cel

260

5 V

PIN Diodes

YES

BAP50-03,135 by NXP Semiconductors

BAP50-03,135

NXP Semiconductors

NXP Semiconductors' BAP50-03,135 is a PIN diode with 50V breakdown voltage and 40 ohm forward resistance. Ideal for RF applications, it operates up to 150°C, has 0.55 pF capacitance, and can withstand peak reflow at 260°C for 30s.

50 V

.55 pF

40 ohm

.5 mA

100 MHz

PIN DIODE

e3

1

150 Cel

260

1 V

PIN Diodes

YES

TIN

30

HSMP-3815-BLKG by Broadcom

HSMP-3815-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.27 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G3

e4

1.5 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NICKEL PALLADIUM GOLD

GULL WING

DUAL

20

HSMP-3815-TR1G by Broadcom

HSMP-3815-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.27 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G3

e4

1.5 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NICKEL PALLADIUM GOLD

GULL WING

DUAL

20

JDP2S02ACT(TPL3) by Toshiba

JDP2S02ACT(TPL3)

Toshiba

PIN DIODE; Surface Mount: YES; Minimum Breakdown Voltage: 30 V; Maximum Operating Temperature: 150 Cel; Maximum Diode Forward Resistance: 1.5 ohm; Diode Resistive Test Current: 10 mA;

30 V

.3 pF

1.5 ohm

10 mA

100 MHz

PIN DIODE

150 Cel

1 V

PIN Diodes

YES

JDP2S08SC(TPL3) by Toshiba

JDP2S08SC(TPL3)

Toshiba

PIN DIODE; Surface Mount: YES; Maximum Diode Forward Resistance: 1.5 ohm; Maximum Operating Temperature: 150 Cel; Diode Resistive Test Frequency: 100 MHz; Nominal Diode Capacitance: .21 pF;

30 V

.21 pF

1.5 ohm

10 mA

100 MHz

PIN DIODE

150 Cel

1 V

PIN Diodes

YES

JDP4P02AT(TE85L) by Toshiba

JDP4P02AT(TE85L)

Toshiba

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Diode Forward Resistance: 1.5 ohm; Nominal Diode Capacitance: .3 pF; Diode Resistive Test Current: 10 mA;

30 V

.3 pF

1.5 ohm

10 mA

100 MHz

PIN DIODE

150 Cel

1 V

PIN Diodes

YES

CLA4605-085LF by Skyworks Solutions

CLA4605-085LF

Skyworks Solutions

CLA4605-085LF by Skyworks Solutions is a PIN diode with high frequency to C band range. It has a max diode capacitance of 0.045 pF and can handle up to 3W power dissipation. Ideal for limiter applications, this diode operates at temperatures up to 175°C.

LIMITER

30 V

CATHODE

SINGLE

.045 pF

SILICON

2 ohm

PIN DIODE

HIGH FREQUENCY TO C BAND

S-XDSO-N2

.007 us

1

1

2

175 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

260

3 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

DUAL

SMP1330-085LF by Skyworks Solutions

SMP1330-085LF

Skyworks Solutions

SMP1330-085LF by Skyworks Solutions is a PIN diode with 1 pF capacitance, 2 ohm forward resistance, and 3 W power dissipation. It operates in the high frequency to C band range and is used as a limiter for applications requiring a breakdown voltage of 30 V and operating temperature up to 175°C.

LIMITER

30 V

CATHODE

SINGLE

1 pF

SILICON

2 ohm

PIN DIODE

HIGH FREQUENCY TO C BAND

S-PDSO-C2

.004 us

1

1

2

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

3 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

C BEND

DUAL

SMP1352-005LF by Skyworks Solutions

SMP1352-005LF

Skyworks Solutions

SMP1352-005LF by Skyworks Solutions is a PIN diode with 0.35 pF capacitance, 1.35 ohm forward resistance, and 0.25 W power dissipation. It is ideal for high frequency to S band applications such as switching due to its positive-intrinsic-negative technology and dual terminal position.

LOW DISTORTION

SWITCHING

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

HIGH FREQUENCY TO S BAND

R-PDSO-G3

1 us

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

CLA4603-085LF by Skyworks Solutions

CLA4603-085LF

Skyworks Solutions

CLA4603-085LF by Skyworks Solutions is a PIN diode with 0.4 pF capacitance, 2 ohm forward resistance, and 2 W power dissipation. It operates in the high-frequency to C band range and is ideal for limiter applications. With a temperature range of -55°C to 175°C, it offers reliable performance in various conditions.

LIMITER

20 V

CATHODE

SINGLE

.4 pF

SILICON

2 ohm

PIN DIODE

HIGH FREQUENCY TO C BAND

S-PDSO-N2

e3

.01 us

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

2 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

DUAL

CLA4606-085LF by Skyworks Solutions

CLA4606-085LF

Skyworks Solutions

CLA4606-085LF by Skyworks Solutions is a PIN diode with a max power dissipation of 3W, suitable for high-frequency to C band applications. It has a reverse test voltage of 6V and a diode resistive test frequency of 500MHz. This single-configured diode in a plastic/epoxy package is ideal for limiter circuits due to its low forward resistance of 2 ohm.

LIMITER

45 V

CATHODE

SINGLE

.38 pF

.3 pF

SILICON

2 ohm

10 mA

500 MHz

PIN DIODE

HIGH FREQUENCY TO C BAND

S-PDSO-N2

e3

.01 us

1

1

2

175 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

3 W

6 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

DUAL

40

CLA4607-085LF by Skyworks Solutions

CLA4607-085LF

Skyworks Solutions

CLA4607-085LF by Skyworks Solutions is a PIN diode with 0.35 pF capacitance, 2 ohm forward resistance, and 1.3 W power dissipation. It is used as a limiter in applications requiring breakdown voltage of 180V, operating temperature range from -55 to 150 °C, and Schottky technology for high performance.

LIMITER

180 V

CATHODE

SINGLE

.35 pF

.3 pF

SILICON

2 ohm

10 mA

500 MHz

PIN DIODE

S-PDSO-N2

e3

.05 us

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

1.3 W

YES

SCHOTTKY

TIN

NO LEAD

DUAL

BAR64-02LRH-E6433 by Infineon Technologies

BAR64-02LRH-E6433

Infineon Technologies

PIN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Nominal Diode Capacitance: .13 pF; Maximum Operating Temperature: 125 Cel; Maximum Diode Forward Resistance: 20 ohm;

150 V

.13 pF

20 ohm

1 mA

100 MHz

PIN DIODE

1.55 us

1

125 Cel

260

0 V

PIN Diodes

YES

RN242CST2R by ROHM

RN242CST2R

ROHM

ROHM's RN242CST2R is a SINGLE PIN Diode with 0.35 pF capacitance, 30V breakdown voltage, and 3 ohm forward resistance. Ideal for high-frequency applications like RF switches due to its positive-intrinsic-negative technology and silicon element material.

30 V

SINGLE

.35 pF

.35 pF

SILICON

3 ohm

3 mA

100 MHz

PIN DIODE

e3

1

1

150 Cel

225

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

CLA4608-085LF by Skyworks Solutions

CLA4608-085LF

Skyworks Solutions

CLA4608-085LF by Skyworks Solutions is a PIN diode with a reverse test voltage of 38V and max operating temperature of 150°C. With a diode forward resistance of 1.2 ohm, it is ideal for applications requiring high-frequency switching such as RF switches in communication systems.

120 V

.6 pF

SILICON

1.2 ohm

10 mA

500 MHz

PIN DIODE

.1 us

1

1

150 Cel

-40 Cel

260

38 V

PIN Diodes

YES

HVD131KRF-E by Renesas Electronics

HVD131KRF-E

Renesas Electronics

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

SINGLE

.8 pF

SILICON

1 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

BA595E6327HTSA1 by Infineon Technologies

BA595E6327HTSA1

Infineon Technologies

Infineon's BA595E6327HTSA1 is a PIN diode with 0.4 pF capacitance, 7 ohm forward resistance, and 50V breakdown voltage. Ideal for attenuator and switching applications in medium to L band frequencies. Features small outline package, dual terminals, and positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

e3

1.6 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BA595E6433HTMA1 by Infineon Technologies

BA595E6433HTMA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

1.6 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR61E6327HTSA1 by Infineon Technologies

BAR61E6327HTSA1

Infineon Technologies

Infineon's BAR61E6327HTSA1 is a PIN diode with 0.5 pF capacitance, suitable for high frequency applications like attenuators and switching. It operates at up to 150°C, has a power dissipation of 0.25 W, and features positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

ANODE AND CATHODE

COMPLEX

.5 pF

SILICON

PIN DIODE

HIGH FREQUENCY

R-PDSO-G4

e3

1 us

1

3

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR88-02VE6327 by Infineon Technologies

BAR88-02VE6327

Infineon Technologies

Infineon's BAR88-02VE6327 is a PIN diode for ultra-high frequency applications. With a max forward resistance of 2.5 ohm, it operates b/w -55 to 150 °C. Suitable for switching purposes, this diode has a small outline package and matte tin terminal finish.

SWITCHING

80 V

SINGLE

.4 pF

.25 pF

SILICON

2.5 ohm

1 mA

100 MHz

PIN DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

.5 us

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BAR141E6327HTSA1 by Infineon Technologies

BAR141E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR151E6327HTSA1 by Infineon Technologies

BAR151E6327HTSA1

Infineon Technologies

Infineon's BAR151E6327HTSA1 is a PIN diode with common cathode, 2 elements, and high frequency band. It has a max diode capacitance of 0.5 pF and is suitable for attenuator and switching applications. The diode operates at up to 150°C, with a forward resistance of 12 ohm and power dissipation of 0.25 W.

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

COMMON CATHODE, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR6302WH6327XTSA1 by Infineon Technologies

BAR6302WH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

SINGLE

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-F2

.075 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

BAR6704E6327HTSA1 by Infineon Technologies

BAR6704E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SILICON

1.8 ohm

PIN DIODE

L BAND

R-PDSO-G3

.7 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR8802LRHE6327XTSA1 by Infineon Technologies

BAR8802LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-XBCC-N2

e4

.5 us

1

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GOLD

NO LEAD

BOTTOM

BAR9002LRHE6327XTSA1 by Infineon Technologies

BAR9002LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

BAR9002LSE6327XTSA1 by Infineon Technologies

BAR9002LSE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

DC2011A by Gec Plessey Semiconductors

DC2011A

Gec Plessey Semiconductors

DC2011A by Gec Plessey Semiconductors is a PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.2 pF, it offers low forward resistance of 3 ohm and can handle up to 0.25 W power dissipation. Ideal for switching operations, this surface-mount diode has a temperature range from -55°C to 150°C.

SWITCHING

100 V

SINGLE

.2 pF

SILICON

3 ohm

25 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

2 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2118A by Gec Plessey Semiconductors

DC2118A

Gec Plessey Semiconductors

DC2118A by Gec Plessey Semiconductors is a PIN diode with 0.4 pF capacitance, 1 ohm forward resistance, and 100 V breakdown voltage. It operates in high frequency to Ku band applications like attenuators, limiters, and switches. With a max power dissipation of 0.25 W and operating temperature range from -55°C to 150°C, it's ideal for microwave systems.

ATTENUATOR; LIMITER; SWITCHING

100 V

SINGLE

.4 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.05 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

DC2118B by Gec Plessey Semiconductors

DC2118B

Gec Plessey Semiconductors

DC2118B by Gec Plessey Semiconductors is a PIN diode with high frequency to Ku band range. It has a max diode capacitance of 0.4 pF and operates b/w -55°C to 150°C. Ideal for attenuator, limiter, and switching applications due to its low forward resistance of 1 ohm and power dissipation of 0.25 W.

ATTENUATOR; LIMITER; SWITCHING

100 V

SINGLE

.4 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.05 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

DC2552A by Gec Plessey Semiconductors

DC2552A

Gec Plessey Semiconductors

DC2552A by Gec Plessey Semiconductors is a single PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.12 pF, it operates b/w -55°C to 150°C. This round, surface-mount chip has a forward resistance of 2 ohm and can handle up to 0.25 W power dissipation in switching applications.

SWITCHING

25 V

SINGLE

.12 pF

SILICON

2 ohm

25 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

30 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2518A by Gec Plessey Semiconductors

DC2518A

Gec Plessey Semiconductors

DC2518A by Gec Plessey Semiconductors is a single PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.15 pF, it offers low forward resistance of 1 ohm and can handle up to 0.25 W power dissipation. Ideal for switching operations, this silicon-based diode operates b/w -55°C to 150°C temperature range.

SWITCHING

50 V

SINGLE

.15 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

500 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2110A by Gec Plessey Semiconductors

DC2110A

Gec Plessey Semiconductors

DC2110A by Gec Plessey Semiconductors is a PIN Diode with 0.4 pF capacitance, 2 ohm forward resistance, and 50 V breakdown voltage. Ideal for high frequency to Ku band applications like attenuators, limiters, and switches. Operates b/w -55°C to 150°C temperature range.

ATTENUATOR; LIMITER; SWITCHING

50 V

SINGLE

.4 pF

SILICON

2 ohm

20 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.005 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

CLA4609-086LF by Skyworks Solutions

CLA4609-086LF

Skyworks Solutions

CLA4609-086LF by Skyworks Solutions is a PIN diode with a max forward resistance of 1.5 ohm and reverse test voltage of 30V, suitable for limiter applications in the C band frequency range. It operates b/w -55 to 150°C, has a diode capacitance of 0.6 pF, and features a small outline package style for surface mount assembly.

LIMITER

250 V

CATHODE

SINGLE

.6 pF

SILICON

1.5 ohm

10 mA

500 MHz

PIN DIODE

C BAND

S-XDSO-N2

e4

1.1 us

1

1

2

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

260

Not Qualified

30 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

40

HSMP-386J-BLKG by Broadcom

HSMP-386J-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 8; Surface Mount: YES; Package Shape: SQUARE;

LOW DISTORTION

SWITCHING

100 V

COMPLEX

1.25 pF

1.2 pF

SILICON

.77 ohm

50 mA

100 MHz

PIN DIODE

L BAND

S-PDSO-N8

e3

.26 us

1

8

8

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

2 W

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

NO LEAD

DUAL

20

HSMP-386J-TR2G by Broadcom

HSMP-386J-TR2G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 8; Surface Mount: YES; Package Shape: SQUARE;

LOW DISTORTION

SWITCHING

100 V

COMPLEX

1.25 pF

1.2 pF

SILICON

.77 ohm

50 mA

100 MHz

PIN DIODE

L BAND

S-PDSO-N8

e3

.26 us

1

8

8

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

2 W

Not Qualified

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

NO LEAD

DUAL

20

SMP1304-004LF by Skyworks Solutions

SMP1304-004LF

Skyworks Solutions

SMP1304-004LF by Skyworks Solutions is a PIN diode with common cathode, 2 elements. It operates in high frequency to L band range, with 0.3 pF diode capacitance. Ideal for attenuator applications due to its low forward resistance of 2 ohm and max power dissipation of 0.25 W.

LOW DISTORTION

ATTENUATOR

COMMON CATHODE, 2 ELEMENTS

.3 pF

SILICON

2 ohm

PIN DIODE

HIGH FREQUENCY TO L BAND

R-PDSO-G3

e3

1 us

1

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

Matte Tin (Sn)

GULL WING

DUAL

40

BAR88-02VE6127 by Infineon Technologies

BAR88-02VE6127

Infineon Technologies

Infineon's BAR88-02VE6127 is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80V breakdown voltage. Ideal for L Band applications like switching due to its positive-intrinsic-negative technology and small outline package style. Operating range from -55°C to 125°C makes it versatile for various environments.

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-PDSO-F2

e3

.5 us

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BAP1321-02,115 by NXP Semiconductors

BAP1321-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.5 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP1321-03,115 by NXP Semiconductors

BAP1321-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.5 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30