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RECTANGULAR PIN Diodes 73

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NTE555 by Nte Electronics

NTE555

Nte Electronics

NTE555 by Nte Electronics is a PIN Diode with 1 pF diode capacitance, 20 V reverse test voltage, and -55 to 125 °C operating temperature range. It is used for switching applications in the very high frequency to ultra high frequency band due to its positive-intrinsic-negative technology and 0.4 W power dissipation capability.

SWITCHING

50 V

SINGLE

1 pF

.48 pF

SILICON

PIN DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDIP-T2

.0001 us

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

.4 W

20 V

NO

POSITIVE-INTRINSIC-NEGATIVE

THROUGH-HOLE

DUAL

HSMP-3815-BLKG by Broadcom

HSMP-3815-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.27 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G3

e4

1.5 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NICKEL PALLADIUM GOLD

GULL WING

DUAL

20

HSMP-3815-TR1G by Broadcom

HSMP-3815-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.27 pF

SILICON

3 ohm

100 mA

100 MHz

PIN DIODE

R-PDSO-G3

e4

1.5 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NICKEL PALLADIUM GOLD

GULL WING

DUAL

20

SMP1352-005LF by Skyworks Solutions

SMP1352-005LF

Skyworks Solutions

SMP1352-005LF by Skyworks Solutions is a PIN diode with 0.35 pF capacitance, 1.35 ohm forward resistance, and 0.25 W power dissipation. It is ideal for high frequency to S band applications such as switching due to its positive-intrinsic-negative technology and dual terminal position.

LOW DISTORTION

SWITCHING

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

SILICON

1.35 ohm

PIN DIODE

HIGH FREQUENCY TO S BAND

R-PDSO-G3

1 us

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

HVD131KRF-E by Renesas Electronics

HVD131KRF-E

Renesas Electronics

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

SINGLE

.8 pF

SILICON

1 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

BA595E6327HTSA1 by Infineon Technologies

BA595E6327HTSA1

Infineon Technologies

Infineon's BA595E6327HTSA1 is a PIN diode with 0.4 pF capacitance, 7 ohm forward resistance, and 50V breakdown voltage. Ideal for attenuator and switching applications in medium to L band frequencies. Features small outline package, dual terminals, and positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

e3

1.6 us

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BA595E6433HTMA1 by Infineon Technologies

BA595E6433HTMA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.4 pF

SILICON

7 ohm

PIN DIODE

MEDIUM FREQUENCY TO L BAND

R-PDSO-G2

1.6 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

NOT SPECIFIED

BAR61E6327HTSA1 by Infineon Technologies

BAR61E6327HTSA1

Infineon Technologies

Infineon's BAR61E6327HTSA1 is a PIN diode with 0.5 pF capacitance, suitable for high frequency applications like attenuators and switching. It operates at up to 150°C, has a power dissipation of 0.25 W, and features positive-intrinsic-negative technology.

ATTENUATOR; SWITCHING

ANODE AND CATHODE

COMPLEX

.5 pF

SILICON

PIN DIODE

HIGH FREQUENCY

R-PDSO-G4

e3

1 us

1

3

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR88-02VE6327 by Infineon Technologies

BAR88-02VE6327

Infineon Technologies

Infineon's BAR88-02VE6327 is a PIN diode for ultra-high frequency applications. With a max forward resistance of 2.5 ohm, it operates b/w -55 to 150 °C. Suitable for switching purposes, this diode has a small outline package and matte tin terminal finish.

SWITCHING

80 V

SINGLE

.4 pF

.25 pF

SILICON

2.5 ohm

1 mA

100 MHz

PIN DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

.5 us

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BAR141E6327HTSA1 by Infineon Technologies

BAR141E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR151E6327HTSA1 by Infineon Technologies

BAR151E6327HTSA1

Infineon Technologies

Infineon's BAR151E6327HTSA1 is a PIN diode with common cathode, 2 elements, and high frequency band. It has a max diode capacitance of 0.5 pF and is suitable for attenuator and switching applications. The diode operates at up to 150°C, with a forward resistance of 12 ohm and power dissipation of 0.25 W.

LOW DISTORTION

ATTENUATOR; SWITCHING

100 V

COMMON CATHODE, 2 ELEMENTS

.5 pF

SILICON

12 ohm

PIN DIODE

HIGH FREQUENCY

R-PDSO-G3

e3

1 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAR6302WH6327XTSA1 by Infineon Technologies

BAR6302WH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

50 V

SINGLE

.3 pF

SILICON

2 ohm

PIN DIODE

S BAND

R-PDSO-F2

.075 us

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

FLAT

DUAL

BAR6704E6327HTSA1 by Infineon Technologies

BAR6704E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

150 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SILICON

1.8 ohm

PIN DIODE

L BAND

R-PDSO-G3

.7 us

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GULL WING

DUAL

BAR8802LRHE6327XTSA1 by Infineon Technologies

BAR8802LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-XBCC-N2

e4

.5 us

1

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

GOLD

NO LEAD

BOTTOM

BAR9002LRHE6327XTSA1 by Infineon Technologies

BAR9002LRHE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

NOT SPECIFIED

BAR9002LSE6327XTSA1 by Infineon Technologies

BAR9002LSE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

80 V

SINGLE

.35 pF

SILICON

2.3 ohm

PIN DIODE

L BAND

R-XBCC-N2

.75 us

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.15 W

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

SMP1304-004LF by Skyworks Solutions

SMP1304-004LF

Skyworks Solutions

SMP1304-004LF by Skyworks Solutions is a PIN diode with common cathode, 2 elements. It operates in high frequency to L band range, with 0.3 pF diode capacitance. Ideal for attenuator applications due to its low forward resistance of 2 ohm and max power dissipation of 0.25 W.

LOW DISTORTION

ATTENUATOR

COMMON CATHODE, 2 ELEMENTS

.3 pF

SILICON

2 ohm

PIN DIODE

HIGH FREQUENCY TO L BAND

R-PDSO-G3

e3

1 us

1

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

Matte Tin (Sn)

GULL WING

DUAL

40

BAR88-02VE6127 by Infineon Technologies

BAR88-02VE6127

Infineon Technologies

Infineon's BAR88-02VE6127 is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80V breakdown voltage. Ideal for L Band applications like switching due to its positive-intrinsic-negative technology and small outline package style. Operating range from -55°C to 125°C makes it versatile for various environments.

LOW DISTORTION

SWITCHING

80 V

SINGLE

.4 pF

SILICON

2.5 ohm

PIN DIODE

L BAND

R-PDSO-F2

e3

.5 us

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

FLAT

DUAL

BAP1321-02,115 by NXP Semiconductors

BAP1321-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.5 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP1321-03,115 by NXP Semiconductors

BAP1321-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.45 pF

.4 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.5 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP1321-04,215 by NXP Semiconductors

BAP1321-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.45 pF

.42 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

TO-236AB

R-PDSO-G3

e3

.5 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-03,115 by NXP Semiconductors

BAP50-03,115

NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.

50 V

SINGLE

.55 pF

.55 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-04W,115 by NXP Semiconductors

BAP50-04W,115

NXP Semiconductors

The NXP Semiconductors BAP50-04W,115 is a PIN diode with 2 elements in series connected configuration. It has a max diode capacitance of 0.6 pF and operates b/w -65°C to 150°C. Ideal for applications requiring high-speed switching and RF signal routing in small outline packages.

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05,215 by NXP Semiconductors

BAP50-05,215

NXP Semiconductors

The NXP Semiconductors BAP50-05,215 is a PIN diode with common cathode, 2 elements. It has a max diode capacitance of 0.6 pF and operates b/w -65 to 150 °C. Ideal for applications requiring high-frequency switching such as RF switches and attenuators due to its low forward resistance and breakdown voltage of 50 V.

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.6 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

1 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP50-05W,115 by NXP Semiconductors

BAP50-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

50 V

COMMON CATHODE, 2 ELEMENTS

.6 pF

.45 pF

SILICON

5 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.05 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-02,115 by NXP Semiconductors

BAP63-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.36 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-F2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.715 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

FLAT

DUAL

30

BAP63-03,115 by NXP Semiconductors

BAP63-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.32 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G2

e3

.31 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63-05W,115 by NXP Semiconductors

BAP63-05W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.4 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

.31 us

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-04,215 by NXP Semiconductors

BAP64-04,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP64-05,215 by NXP Semiconductors

BAP64-05,215

NXP Semiconductors

The NXP Semiconductors BAP64-05,215 is a PIN diode with common cathode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. Ideal for attenuator and switching applications, it can withstand temperatures from -65 to 150°C while offering a max power dissipation of 0.25 W.

HIGH VOLTAGE

ATTENUATOR; SWITCHING

175 V

COMMON CATHODE, 2 ELEMENTS

.35 pF

.52 pF

SILICON

40 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-G3

e3

1.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP65-03,115 by NXP Semiconductors

BAP65-03,115

NXP Semiconductors

BAP65-03,115 by NXP Semiconductors is a single PIN diode with a max diode capacitance of 0.9 pF. It is used in applications such as attenuators and switching, with a max operating temperature of 150°C and a min operating temperature of -65°C.

ATTENUATOR; SWITCHING

30 V

SINGLE

.9 pF

.65 pF

SILICON

.9 ohm

5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

.17 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAT18,215 by NXP Semiconductors

BAT18,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SWITCHING

35 V

SINGLE

1 pF

.75 pF

SILICON

.7 ohm

5 mA

100 MHz

PIN DIODE

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

20 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70AM,135 by NXP Semiconductors

BAP70AM,135

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW DISTORTION

ATTENUATOR

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.25 pF

SILICON

1.9 ohm

PIN DIODE

1.1 V

R-PDSO-G6

e3

1.25 us

1

4

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.3 W

Not Qualified

50 V

.1 uA

50 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-04W,115 by NXP Semiconductors

BAP70-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

.6 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G3

e3

1.25 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.26 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP70-03,115 by NXP Semiconductors

BAP70-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE

ATTENUATOR

50 V

SINGLE

.25 pF

.57 pF

SILICON

1.9 ohm

.5 mA

100 MHz

PIN DIODE

R-PDSO-G2

e3

1.25 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

30

BAP63LX,315 by NXP Semiconductors

BAP63LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.3 pF

.34 pF

SILICON

1.5 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.32 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.135 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP55L,315 by NXP Semiconductors

BAP55L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

SINGLE

.28 pF

SILICON

.7 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.28 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51LX,315 by NXP Semiconductors

BAP51LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

.3 pF

SILICON

1.5 ohm

500 mA

100 MHz

PIN DIODE

S BAND

R-PDSO-N2

e3

.55 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.14 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

DUAL

30

BAP51L,315 by NXP Semiconductors

BAP51L,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.4 pF

SILICON

1.5 ohm

PIN DIODE

S BAND

R-PBCC-N2

e3

.55 us

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.5 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

NO LEAD

BOTTOM

BAP51-04W,115 by NXP Semiconductors

BAP51-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.55 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.55 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.24 W

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

TIN

GULL WING

DUAL

BAP142LX,315 by NXP Semiconductors

BAP142LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

50 V

SINGLE

.26 pF

.25 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

e3

.11 us

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

Tin (Sn)

NO LEAD

BOTTOM

30

BAP1321LX,315 by NXP Semiconductors

BAP1321LX,315

NXP Semiconductors

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ATTENUATOR; SWITCHING

60 V

SINGLE

.38 pF

.32 pF

SILICON

1.3 ohm

.5 mA

100 MHz

PIN DIODE

S BAND

R-PBCC-N2

.48 us

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.13 W

Not Qualified

0 V

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

BOTTOM

ASML-5822-BLKG by Broadcom

ASML-5822-BLKG

Broadcom

ASML-5822-BLKG by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5822-TR1G by Broadcom

ASML-5822-TR1G

Broadcom

ASML-5822-TR1G by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5822-TR2G by Broadcom

ASML-5822-TR2G

Broadcom

ASML-5822-TR2G by Broadcom is a PIN diode with 0.8 pF capacitance, 0.1 uA reverse current, and 0.6 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 50 V, operating b/w -65 to 150 °C.

LIMITER

50 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

SILICON

.6 ohm

PIN DIODE

.34 V

R-PDSO-G3

e3

.07 us

1

2

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

50 V

.1 uA

1 V

Other Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

20

ASML-5829-BLKG by Broadcom

ASML-5829-BLKG

Broadcom

ASML-5829-BLKG by Broadcom is a PIN diode with 2 elements, 0.375 pF capacitance, and 2.5 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 100 V and operates up to 150°C. The diode features positive-intrinsic-negative technology and comes in a small outline package for surface mount assembly.

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

ASML-5829-TR1G by Broadcom

ASML-5829-TR1G

Broadcom

Broadcom's ASML-5829-TR1G is a PIN diode with 2 elements, 0.375 pF capacitance, and 2.5 ohm forward resistance. It is used as a limiter in applications requiring a breakdown voltage of 100V and operates up to 150°C. The diode features positive-intrinsic-negative technology, matte tin finish, and gull wing terminal form for surface mount installation.

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL

ASML-5829-TR2G by Broadcom

ASML-5829-TR2G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LIMITER

100 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

SILICON

2.5 ohm

PIN DIODE

R-PDSO-G3

e3

.2 us

1

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

MATTE TIN

GULL WING

DUAL