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ROUND Diodes & Rectifiers 670

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SBYV28-150-E3/73 by Vishay Intertechnology

SBYV28-150-E3/73

Vishay Intertechnology

Vishay Intertechnology's SBYV28-150-E3/73 is a single rectifier diode with max VF of 1.1 V and output current of 3.5 A. With fast 0.02 us reverse recovery time, it operates in temp range -55 to 150 °C for efficiency applications. The diode has a max reverse voltage of 150 V and non-repetitive forward current of 90 A, making it suitable for various electronic circuits.

LOW LEAKAGE CURRENT, FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

90 A

1

1

2

150 Cel

-55 Cel

3.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.02 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

1N5399-E3/73 by Vishay Intertechnology

1N5399-E3/73

Vishay Intertechnology

1N5399-E3/73 by Vishay Intertechnology is a single rectifier diode with 1000V peak reverse voltage, 1.5A output current, and 2us reverse recovery time. It operates b/w -50°C to 150°C and is ideal for applications requiring high voltage rectification in electronic circuits.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.4 V

DO-204AL

O-PALF-W2

e3

50 A

1

1

2

150 Cel

-50 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

1000 V

2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

BY255GP-E3/54 by Vishay Intertechnology

BY255GP-E3/54

Vishay Intertechnology

BY255GP-E3/54 by Vishay Intertechnology is a single rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 1300V. It has a fast max reverse recovery time of 3us, making it suitable for high-power applications requiring efficient switching capabilities at temperatures ranging from -65°C to 175°C.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

100 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

1300 V

3 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

EGP50G-E3/54 by Vishay Intertechnology

EGP50G-E3/54

Vishay Intertechnology

Vishay Intertechnology's EGP50G-E3/54 is a single rectifier diode with 400V max reverse voltage and 5A output current. With 0.05us reverse recovery time, it operates b/w -65°C to 150°C, making it ideal for efficiency applications. The diode features matte tin finish, wire terminals, and isolated case connection in a round plastic package.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.05 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

EGP50G-E3/73 by Vishay Intertechnology

EGP50G-E3/73

Vishay Intertechnology

Vishay Intertechnology's EGP50G-E3/73 is a single rectifier diode with 400V peak reverse voltage and 5A output current. With 0.05us reverse recovery time, it operates b/w -65°C to 150°C. Ideal for efficiency applications due to its low forward voltage of 1.25V and high non-repetitive peak forward current of 150A.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.05 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

FGP30D-E3/54 by Vishay Intertechnology

FGP30D-E3/54

Vishay Intertechnology

Vishay Intertechnology's FGP30D-E3/54 is a single rectifier diode with a max reverse recovery time of 0.035 us and a max forward voltage of 0.95 V. It operates in temperatures ranging from -65 to 175 °C, making it ideal for efficiency applications requiring up to 3 A output current.

FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-204AC

O-PALF-W2

e3

125 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

BYD33DGP-E3/54 by Vishay Intertechnology

BYD33DGP-E3/54

Vishay Intertechnology

Vishay Intertechnology's BYD33DGP-E3/54 is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. Its fast 0.15us reverse recovery time makes it ideal for applications requiring quick switching, such as power supplies and inverters. With an operating temperature range from -65°C to 175°C, it offers reliable performance in various environments.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.15 us

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

BYD33DGP-E3/73 by Vishay Intertechnology

BYD33DGP-E3/73

Vishay Intertechnology

Vishay Intertechnology's BYD33DGP-E3/73 is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. Its plastic/epoxy package makes it suitable for applications requiring fast switching speeds, such as power supplies and inverters. Operating temperature ranges from -65°C to 175°C, making it versatile in various environments.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.15 us

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

GI250-3-E3/54 by Vishay Intertechnology

GI250-3-E3/54

Vishay Intertechnology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

3.5 V

DO-204AL

O-PALF-W2

e3

15 A

1

1

2

175 Cel

-65 Cel

.25 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

3000 V

2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

GP02-40HE3/54 by Vishay Intertechnology

GP02-40HE3/54

Vishay Intertechnology

The Vishay Intertechnology GP02-40HE3/54 is a single rectifier diode with a max forward voltage of 3V and output current of 0.25A. With a max reverse recovery time of 2us, it operates in temperatures ranging from -65°C to 175°C. Ideal for applications requiring high peak reverse voltage and low forward current requirements.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

3 V

DO-204AL

O-PALF-W2

e3

15 A

1

1

2

175 Cel

-65 Cel

.25 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

4000 V

2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

GP02-40HE3/73 by Vishay Intertechnology

GP02-40HE3/73

Vishay Intertechnology

The Vishay Intertechnology GP02-40HE3/73 is a single rectifier diode with a max forward voltage of 3V and output current of 0.25A. It has a max reverse recovery time of 2us, making it suitable for applications requiring high voltage protection such as power supplies and industrial equipment. Operating temperature ranges from -65°C to 175°C, ensuring reliable performance in various environments.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

3 V

DO-204AL

O-PALF-W2

e3

15 A

1

1

2

175 Cel

-65 Cel

.25 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

4000 V

2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH3L06-RL by STMicroelectronics

STTH3L06-RL

STMicroelectronics

STTH3L06-RL by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.085 µs and can handle up to 600 V. It operates at a max temp of 175 °C and supports output currents up to 3 A, ideal for demanding applications.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

DO-201AD

O-PALF-W2

e3

70 A

1

1

2

175 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

.085 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

1N5817G-TR by Microsemi

1N5817G-TR

Microsemi

1N5817G-TR by Microsemi is a Schottky rectifier diode with 20V peak reverse voltage and 1A output current. It operates b/w -65°C to 150°C, making it ideal for applications requiring high-speed switching and low forward voltage drop in electronic circuits. The diode's glass package body material ensures durability and reliability in various environments.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-41

O-LALF-W2

e0

1

1

2

150 Cel

-65 Cel

1 A

GLASS

ROUND

LONG FORM

Not Qualified

20 V

NO

SCHOTTKY

TIN LEAD

WIRE

AXIAL

HER105G-AP by Micro Commercial Components

HER105G-AP

Micro Commercial Components

HER105G-AP by Micro Commercial Components is a single rectifier diode with 1A output current and 400V peak reverse voltage. It has a fast 0.05us reverse recovery time and low 5uA reverse current, making it ideal for applications requiring efficient power conversion in electronic circuits. The diode's matte tin finish, wire terminal form, and isolated case connection ensure reliable performance in various electronic devices.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-41

O-PALF-W2

e3

1

30 A

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

400 V

5 uA

.05 us

NO

MATTE TIN

WIRE

AXIAL

10

MUR110GP-AP by Micro Commercial Components

MUR110GP-AP

Micro Commercial Components

MUR110GP-AP by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.045 us and max forward voltage of 0.97 V. It is ideal for applications requiring a 100 V repetitive peak reverse voltage, such as power supplies and battery chargers.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.97 V

DO-41

O-PALF-W2

e3

1

35 A

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

100 V

5 uA

.045 us

NO

MATTE TIN

WIRE

AXIAL

10

MUR120GP-AP by Micro Commercial Components

MUR120GP-AP

Micro Commercial Components

MUR120GP-AP by Micro Commercial Components is a single rectifier diode with 200V peak reverse voltage and 1A output current. With a fast 0.045us reverse recovery time, it's ideal for applications requiring low forward voltage such as power supplies and battery chargers.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

DO-41

O-PALF-W2

e3

1

35 A

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

200 V

5 uA

.045 us

NO

MATTE TIN

WIRE

AXIAL

10

MUR140GP-AP by Micro Commercial Components

MUR140GP-AP

Micro Commercial Components

MUR140GP-AP by Micro Commercial Components is a single rectifier diode with 400V max repetitive peak reverse voltage, 1A max output current, and 0.045us max reverse recovery time. It is used in applications requiring low forward voltage drop and fast switching capabilities.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

DO-41

O-PALF-W2

e3

1

35 A

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

400 V

5 uA

.045 us

NO

MATTE TIN

WIRE

AXIAL

10

BYD33DGPHE3/54 by Vishay Intertechnology

BYD33DGPHE3/54

Vishay Intertechnology

Vishay Intertechnology's BYD33DGPHE3/54 is a single rectifier diode with a max output current of 1A. It has a max repetitive peak reverse voltage of 200V and a min operating temperature of -65°C. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard and avalanche technology.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

AEC-Q101

200 V

.15 us

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

BYD33DGPHE3/73 by Vishay Intertechnology

BYD33DGPHE3/73

Vishay Intertechnology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

AEC-Q101

200 V

.15 us

NO

AVALANCHE

MATTE TIN

WIRE

AXIAL

BYM10-400HE3/97 by Vishay Intertechnology

BYM10-400HE3/97

Vishay Intertechnology

Vishay Intertechnology's BYM10-400HE3/97 is a single rectifier diode with a max forward voltage of 1.1V and max output current of 1A. It is commonly used in applications requiring high voltage rectification, such as power supplies and automotive electronics.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-213AB

O-PELF-R2

e3

1

30 A

1

1

2

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

AEC-Q101

400 V

Rectifier Diodes

YES

MATTE TIN

WRAP AROUND

END

RGP02-20EHE3/54 by Vishay Intertechnology

RGP02-20EHE3/54

Vishay Intertechnology

Vishay Intertechnology's RGP02-20EHE3/54 is a single rectifier diode with a max forward voltage of 1.8V and output current of 0.5A. With a max reverse recovery time of 0.3us, it operates in temperatures ranging from -65°C to 175°C. Ideal for applications requiring high peak reverse voltage and low forward current requirements.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.8 V

DO-204AL

O-PALF-W2

e3

20 A

1

1

2

175 Cel

-65 Cel

.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

2000 V

.3 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

RGP02-20EHE3/73 by Vishay Intertechnology

RGP02-20EHE3/73

Vishay Intertechnology

Vishay Intertechnology's RGP02-20EHE3/73 is a single rectifier diode with a max output current of 0.5A and max repetitive peak reverse voltage of 2000V. With a fast 0.3us reverse recovery time, it is ideal for applications requiring high voltage rectification in temperatures ranging from -65 to 175°C.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.8 V

DO-204AL

O-PALF-W2

e3

20 A

1

1

2

175 Cel

-65 Cel

.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

2000 V

.3 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

SBYV26CHE3/73 by Vishay Intertechnology

SBYV26CHE3/73

Vishay Intertechnology

Vishay Intertechnology's SBYV26CHE3/73 is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 600V. With a fast reverse recovery time of 0.03us, it is suitable for applications requiring efficient power conversion in temperature-sensitive environments. The diode's matte tin terminal finish and isolated case connection make it ideal for use in electronic circuits where reliable performance is crucial.

FREE WHEELING DIODE, HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-204AL

O-PALF-W2

e3

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH3R04Q by STMicroelectronics

STTH3R04Q

STMicroelectronics

STTH3R04Q by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and operates at up to 175 °C. It supports a max output current of 3 A and peak reverse voltage of 400 V, ideal for high-efficiency applications. Its isolated axial design ensures reliable performance in various electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-15

O-PALF-W2

60 A

1

1

2

175 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

400 V

.035 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

STTH3R04 by STMicroelectronics

STTH3R04

STMicroelectronics

STTH3R04 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and operates at up to 175 °C. It supports a peak reverse voltage of 400 V and delivers a forward current of 3 A. Ideal for high-efficiency applications, it features a round plastic/epoxy package.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-201AD

O-PALF-W2

e3

1

60 A

1

1

2

175 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH1R04Q by STMicroelectronics

STTH1R04Q

STMicroelectronics

STTH1R04Q by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports 1 A output current and handles peak reverse voltage of 400 V, ideal for power supply applications. Its isolated axial design ensures reliable performance in compact circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-15

O-PALF-W2

30 A

1

1

2

175 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

400 V

.03 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

STTH1R04RL by STMicroelectronics

STTH1R04RL

STMicroelectronics

STTH1R04RL from STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports 1 A output current and 400 V peak reverse voltage, ideal for power supply applications. Its isolated axial design ensures reliable performance in compact circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-41

O-PALF-W2

30 A

1

1

2

175 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

400 V

.03 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

STTH1R04 by STMicroelectronics

STTH1R04

STMicroelectronics

STTH1R04 by STMicroelectronics is a silicon rectifier diode designed for efficient power management. It features a max reverse recovery time of 0.03 µs, supports up to 400 V peak reverse voltage, and handles 1 A output current. Ideal for applications in power supplies and converters.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-41

O-PALF-W2

30 A

1

1

2

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

400 V

.03 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

1N4148,133 by NXP Semiconductors

1N4148,133

NXP Semiconductors

1N4148,133 by NXP Semiconductors is a RECTIFIER DIODE with 100V VRRM and 0.2A IF. It has 0.004us reverse recovery time and 1V VF. Widely used in electronics for signal rectification due to its fast response time and low forward voltage drop.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4148,143 by NXP Semiconductors

1N4148,143

NXP Semiconductors

1N4148,143 by NXP Semiconductors is a RECTIFIER DIODE with 100V VR, 0.2A IF, and 1V VF. Its GLASS package is ideal for applications requiring fast switching speeds in temperatures up to 200°C. With a 0.5W power dissipation rating, it suits various electronic circuits needing high-speed rectification.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4448,133 by NXP Semiconductors

1N4448,133

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.72 V

DO-35

O-LALF-W2

e3

1

.5 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4448,143 by NXP Semiconductors

1N4448,143

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.72 V

DO-35

O-LALF-W2

e3

1

.5 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

MBR5H150VPB-E1 by Diodes Incorporated

MBR5H150VPB-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.92 V

DO-27

O-PALF-W2

125 A

1

1

2

175 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

150 V

8 uA

NO

SCHOTTKY

WIRE

AXIAL

NOT SPECIFIED

MBR5H150VPB-G1 by Diodes Incorporated

MBR5H150VPB-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.92 V

DO-27

O-PALF-W2

125 A

1

1

2

175 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

150 V

8 uA

NO

SCHOTTKY

WIRE

AXIAL

NOT SPECIFIED

1N4448,113 by NXP Semiconductors

1N4448,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

CECC50001-021

100 V

.025 uA

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N914B,113 by NXP Semiconductors

1N914B,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-35

O-LALF-W2

1

1

2

175 Cel

.075 A

GLASS

ROUND

LONG FORM

.25 W

Not Qualified

100 V

.004 us

NO

WIRE

AXIAL

BAW62,113 by NXP Semiconductors

BAW62,113

NXP Semiconductors

The NXP Semiconductors BAW62,113 is a single rectifier diode with a max forward voltage of 1V and output current of 0.25A. It has a max reverse recovery time of 0.004us and operates at temperatures up to 200°C. This diode is commonly used in applications requiring high-speed switching and low power dissipation.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.25 A

GLASS

ROUND

LONG FORM

260

.35 W

Not Qualified

CECC50001-021

75 V

5 uA

.004 us

Rectifier Diodes

NO

AVALANCHE

TIN

WIRE

AXIAL

30

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

VS-SD600N12PC by Vishay Intertechnology

VS-SD600N12PC

Vishay Intertechnology

VS-SD600N12PC by Vishay Intertechnology is a single rectifier diode with max output current of 600A and max repetitive peak reverse voltage of 1200V. Ideal for high voltage, high power applications with operating temperature range from -40 to 180°C. Package style is post/stud mount in ceramic, metal-sealed cofired material.

HIGH VOLTAGE HIGH POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

O-CUPM-H1

13600 A

1

1

1

180 Cel

-40 Cel

600 A

CERAMIC, METAL-SEALED COFIRED

ROUND

POST/STUD MOUNT

NOT SPECIFIED

1200 V

35000 uA

NO

HIGH CURRENT CABLE

UPPER

NOT SPECIFIED

VS-SD600N16PC by Vishay Intertechnology

VS-SD600N16PC

Vishay Intertechnology

VS-SD600N16PC by Vishay Intertechnology is a single rectifier diode with max output current of 600A and max repetitive peak reverse voltage of 1600V. Ideal for high voltage, high power applications with operating temperature range from -40 to 180°C. Package style: Post/Stud Mount.

HIGH VOLTAGE HIGH POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

O-CUPM-H1

13600 A

1

1

1

180 Cel

-40 Cel

600 A

CERAMIC, METAL-SEALED COFIRED

ROUND

POST/STUD MOUNT

NOT SPECIFIED

1600 V

35000 uA

NO

HIGH CURRENT CABLE

UPPER

NOT SPECIFIED

VS-SD600N32PC by Vishay Intertechnology

VS-SD600N32PC

Vishay Intertechnology

VS-SD600N32PC by Vishay Intertechnology is a single rectifier diode with 3200V peak reverse voltage and 600A output current. Its ceramic, metal-sealed co-fired package makes it suitable for high voltage, high power applications. With a max operating temperature of 150°C and min of -40°C, it offers reliable performance in various environments.

HIGH VOLTAGE HIGH POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.44 V

O-CUPM-H1

11000 A

1

1

1

150 Cel

-40 Cel

600 A

CERAMIC, METAL-SEALED COFIRED

ROUND

POST/STUD MOUNT

NOT SPECIFIED

3200 V

35000 uA

NO

HIGH CURRENT CABLE

UPPER

NOT SPECIFIED