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STTH3R04Q

STMicroelectronics

STTH3R04Q by STMicroelectronics

STTH3R04Q by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and operates at up to 175 °C. It supports a max output current of 3 A and peak reverse voltage of 400 V, ideal for high-efficiency applications. Its isolated axial design ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,117 parts In-Stock

1+ parts

-

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6,117

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Digiode

USA . 3,616 parts In-Stock

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100+ parts

-

1k+ parts

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3,616

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Anansix

USA . 957 parts In-Stock

1+ parts

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957

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 718 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

$0.056

10k+ parts

-

718

$0.063

-

$0.056

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MKK Technologies

India . 1,935 parts In-Stock

1+ parts

$0.118

100+ parts

-

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10k+ parts

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1,935

$0.118

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DigiPath Technology Company

USA . 1,935 parts In-Stock

1+ parts

$0.118

100+ parts

-

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-

10k+ parts

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1,935

$0.118

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AZTECH Wire

Italy . 42 parts In-Stock

1+ parts

$12.610

100+ parts

-

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42

$12.610

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QUARKTWIN TECHNOLOGY LTD

USA . 3,534 parts In-Stock

1+ parts

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3,534

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Corphita

USA . 1,332 parts In-Stock

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1,332

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Parana Technologies

USA . 48 parts In-Stock

1+ parts

-

100+ parts

$0.075

1k+ parts

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48

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$0.075

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Overview

Elevate your designs with the STTH3R04Q from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This ultra-fast recovery rectifier diode ensures unparalleled performance and reliability in demanding applications, boasting exceptional thermal efficiency and remarkable durability. Perfect for power conversion, automotive, and industrial uses, it offers customers peace of mind and superior value, driving innovation while optimizing energy efficiency. Experience quality that stands the test of time!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material offers excellent insulation and thermal stability, ensuring durability and reliability in various applications.

Config: SINGLE

A single diode configuration simplifies circuit design and integration, making this product easy to implement in various electronic devices.

Maximum Reverse Recovery Time: 0.035 μs

With a fast reverse recovery time, this diode minimizes switching losses, contributing to improved efficiency in high-speed circuits.

Package Shape: ROUND

The round package shape is compact and versatile, allowing for easy placement in tight spaces on a PCB.

Number of Terminals: 2

Having only two terminals simplifies connections, reducing the risk of errors during assembly.

Package Style (Meter): LONG FORM

The long form package style provides additional surface area for heat dissipation, enhancing performance under high current conditions.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery applications, this diode is ideal for switching power supplies and other circuits where rapid response is critical.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows this diode to function reliably in demanding environments, ensuring a longer lifespan.

Terminal Position: AXIAL

Axial terminal positioning makes this diode easy to install and solder onto circuit boards, facilitating efficient manufacturing.

Case Connection: ISOLATED

Isolated case connections prevent electrical interference and enhance safety in circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), making it essential in power supply circuits.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop ensures efficient operation, minimizing energy loss during conduction.

Maximum Output Current: 3 A

Supporting a maximum output current of 3 A makes this diode suitable for a wide range of applications, from consumer electronics to industrial equipment.

Maximum Repetitive Peak Reverse Voltage: 400 V

With a high repetitive peak reverse voltage, this diode can handle significant voltage spikes, providing reliable performance in various electrical environments.

Maximum Non-Repetitive Peak Forward Current: 60 A

The capability to withstand high peak forward current makes this diode robust under transient conditions, ensuring its reliability in surge applications.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent conductivity and is standard for most diode applications, ensuring compatibility and reliability.

Technical Specifications

Diodes & Rectifiers STTH3R04Q attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH3R04Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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