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RGP02-20EHE3/54

Vishay Intertechnology

RGP02-20EHE3/54 by Vishay Intertechnology

Vishay Intertechnology's RGP02-20EHE3/54 is a single rectifier diode with a max forward voltage of 1.8V and output current of 0.5A. With a max reverse recovery time of 0.3us, it operates in temperatures ranging from -65°C to 175°C. Ideal for applications requiring high peak reverse voltage and low forward current requirements.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,267 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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5,267

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,300 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

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10k+ parts

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1,300

$2.010

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AZTECH Wire

Italy . 396 parts In-Stock

1+ parts

$15.005

100+ parts

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1k+ parts

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10k+ parts

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396

$15.005

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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Overview

Unleash the power of innovation with the Vishay Intertechnology RGP02-20EHE3/54 diode rectifier. Crafted with precision and expertise, this product guarantees top-notch quality and performance. Ideal for a wide range of applications, this diode offers unmatched reliability and efficiency. Say goodbye to worries about overheating or short circuits, as this diode ensures stable operation even in extreme temperatures. Elevate your projects to new heights with the Vishay Intertechnology RGP02-20EHE3/54 - where quality meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration makes it easy to install and use in various applications.

Maximum Reverse Recovery Time: 0.3 us

This fast reverse recovery time ensures efficient operation of the diode, making it suitable for high-speed applications.

Package Shape: ROUND

Round shape allows for easy mounting and integration into different systems.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of error.

Package Style (Meter): LONG FORM

Long form package style provides better heat dissipation and allows for higher power handling capabilities.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability under varying environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in extreme cold environments without performance degradation.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures good electrical conductivity.

Terminal Position: AXIAL

Axial terminal position simplifies installation and ensures proper alignment.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures safety in operation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC and is commonly used in power supplies and rectification circuits.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop ensures efficient energy conversion and minimal power loss.

Maximum Output Current: 0.5 A

High output current rating allows for handling of large loads and high power applications.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection and installation.

Maximum Repetitive Peak Reverse Voltage: 2000 V

High reverse voltage rating makes the diode suitable for high voltage applications and systems.

Maximum Non Repetitive Peak Forward Current: 20 A

High peak forward current rating allows for handling of short-term high current surges without damage to the diode.

Diode Element Material: SILICON

Silicon diode element material ensures good conductivity, high temperature tolerance, and reliability in operation.

Technical Specifications

Diodes & Rectifiers RGP02-20EHE3/54 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JEDEC-95 Code:

DO-204AL

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

2000 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RGP02-20EHE3/54 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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