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STTH1R04Q

STMicroelectronics

STTH1R04Q by STMicroelectronics

STTH1R04Q by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports 1 A output current and handles peak reverse voltage of 400 V, ideal for power supply applications. Its isolated axial design ensures reliable performance in compact circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 21,000 parts In-Stock

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21,000

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Vyrian

USA . 7,030 parts In-Stock

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7,030

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Anansix

USA . 1,898 parts In-Stock

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1,898

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Digiode

USA . 1,430 parts In-Stock

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1,430

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,539 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

$0.075

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1,539

$0.083

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$0.075

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MKK Technologies

India . 682 parts In-Stock

1+ parts

$0.156

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682

$0.156

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DigiPath Technology Company

USA . 682 parts In-Stock

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$0.156

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682

$0.156

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AZTECH Wire

Italy . 981 parts In-Stock

1+ parts

$18.750

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981

$18.750

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Perfect Parts

USA . 74,193 parts In-Stock

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74,193

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QUARKTWIN TECHNOLOGY LTD

USA . 29,282 parts In-Stock

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29,282

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Corphita

USA . 3,340 parts In-Stock

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3,340

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Parana Technologies

USA . 292 parts In-Stock

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$0.099

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292

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$0.099

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Overview

Elevate your projects with the STTH1R04Q by STMicroelectronics—a premier rectifier diode designed for superior performance and reliability. With its robust 400V peak reverse voltage capability and exceptional thermal resistance, this diode excels in demanding applications like power supplies and motor controls. Backed by STMicroelectronics' renowned quality and innovation, the STTH1R04Q ensures efficiency and longevity, delivering unmatched value to your designs. Choose excellence; choose STTH1R04Q!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Config: SINGLE

A single configuration helps in simplifying the circuit design and minimizes space requirements, making it ideal for compact applications.

Maximum Reverse Recovery Time: 0.03 µs

A fast reverse recovery time enhances efficiency and reduces switching losses, ensuring better performance in high-speed applications.

Package Shape: ROUND

The round package shape allows for easy integration into various PCB designs and can improve heat dissipation.

No. of Terminals: 2

With only two terminals, this diode is easy to install and minimizes the complexity of circuit connections.

Package Style (Meter): LONG FORM

Long form package style provides a larger surface area for mounting, making it suitable for robust mechanical support.

Maximum Operating Temperature: 175 °C

High operating temperature capabilities increase reliability in demanding environments, allowing for more versatile applications.

Terminal Position: AXIAL

Axial terminals facilitate easier handling and mounting in circuit boards, thus simplifying the assembly process.

Case Connection: ISOLATED

Isolated connections enhance safety by reducing the risk of short circuits, ensuring reliable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for converting AC to DC, making it essential for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop improves efficiency by minimizing power loss during operation, which is critical for battery-operated devices.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle moderate loads, making it suitable for various consumer and industrial applications.

Terminal Form: WIRE

Wire terminals provide flexible connections, allowing for versatile mounting options and ease of assembly in different configurations.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high peak reverse voltage rating enables the diode to work effectively in high-voltage environments, enhancing system reliability.

Maximum Non Repetitive Peak Forward Current: 30 A

The capability to handle large surge currents of up to 30 A makes this diode suitable for applications where high inrush currents occur.

Diode Element Material: SILICON

Silicon as a diode element material offers excellent thermal stability and performance, ensuring long-lasting operation in various conditions.

Technical Specifications

Diodes & Rectifiers STTH1R04Q attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH1R04Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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