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STTH3R04

STMicroelectronics

STTH3R04 by STMicroelectronics

STTH3R04 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.035 µs and operates at up to 175 °C. It supports a peak reverse voltage of 400 V and delivers a forward current of 3 A. Ideal for high-efficiency applications, it features a round plastic/epoxy package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LWI Electronics Inc

India . 15,738 parts In-Stock

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15,738

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Vyrian

USA . 5,395 parts In-Stock

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5,395

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Digiode

USA . 3,421 parts In-Stock

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3,421

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Anansix

USA . 2,231 parts In-Stock

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2,231

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Fibra_Brandt Electronic GMBH

Germany . 2,200 parts In-Stock

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2,200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 862 parts In-Stock

1+ parts

$0.139

100+ parts

-

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$0.125

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862

$0.139

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$0.125

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MKK Technologies

India . 2,046 parts In-Stock

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$0.261

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2,046

$0.261

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DigiPath Technology Company

USA . 2,046 parts In-Stock

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$0.261

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2,046

$0.261

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AZTECH Wire

Italy . 355 parts In-Stock

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$21.740

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355

$21.740

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Component Stockers USA

USA . 465 parts In-Stock

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$99.990

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465

$99.990

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RC Electronics

USA . 61,212 parts In-Stock

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61,212

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Corphita

USA . 1,769 parts In-Stock

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1,769

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Parana Technologies

USA . 145 parts In-Stock

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$0.166

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145

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$0.166

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Perfect Parts

USA . 76 parts In-Stock

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76

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Cyclops Electronics Ltd (Excess)

UK . 34 parts In-Stock

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34

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Overview

Experience unparalleled performance with the STTH3R04 diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for ultra-fast recovery and reliability, this rectifier diode ensures your applications run smoothly under demanding conditions. With its robust specifications, including high temperature resilience and efficient power management, the STTH3R04 is ideal for everything from power supplies to switching applications. Elevate your projects with a trusted component that delivers quality and efficiency you can rely on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and heat resistance, ensuring reliable performance in various applications.

Config: SINGLE

A single configuration allows for compact design, making it suitable for space-constrained circuit layouts.

Maximum Reverse Recovery Time: 0.035 us

Ultra-fast reverse recovery time enhances switching speeds, making this diode ideal for high-frequency applications.

Package Shape: ROUND

The round package shape facilitates easy integration into various circuit designs and improves thermal dissipation.

No. of Terminals: 2

The simple two-terminal design simplifies connections in electronic circuits.

Package Style (Meter): LONG FORM

The long form style ensures stability and reliability in connections, suitable for a variety of mounting options.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is excellent for applications requiring rapid switching, such as power supplies.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature makes this diode capable of withstanding challenging thermal environments.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent corrosion resistance, enhancing the longevity of the diode in electronic assemblies.

Terminal Position: AXIAL

Axial terminal positioning allows for straightforward mounting and soldering, boosting assembly efficiency.

Case Connection: ISOLATED

An isolated case connection ensures safety and minimizes the risk of short circuits in electronic applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is essential for converting AC to DC, making it key in power applications.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop improves efficiency and reduces heat generation during operation.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode can handle substantial loads, ideal for various power applications.

Terminal Form: WIRE

The wire terminal form enables flexible and reliable connections, adaptable to multiple circuit designs.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high repetitive peak reverse voltage rating allows this diode to withstand significant voltage levels, enhancing durability.

Maximum Non-Repetitive Peak Forward Current: 60 A

A maximum non-repetitive forward current of 60 A demonstrates robustness, enabling it to tolerate brief overload conditions.

Diode Element Material: SILICON

Constructed from silicon, this diode offers excellent electrical properties and reliability essential for electronic components.

Technical Specifications

Diodes & Rectifiers STTH3R04 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH3R04 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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