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STTH1R04

STMicroelectronics

STTH1R04 by STMicroelectronics

STTH1R04 by STMicroelectronics is a silicon rectifier diode designed for efficient power management. It features a max reverse recovery time of 0.03 µs, supports up to 400 V peak reverse voltage, and handles 1 A output current. Ideal for applications in power supplies and converters.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,051 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,051

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Ack Elektronik San.Tic.Ltd.Sti

. 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,000

-

-

-

-

Digiode

USA . 3,325 parts In-Stock

1+ parts

-

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3,325

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Anansix

USA . 524 parts In-Stock

1+ parts

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100+ parts

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524

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 410 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

$0.065

10k+ parts

-

410

$0.072

-

$0.065

-

MKK Technologies

India . 311 parts In-Stock

1+ parts

$0.135

100+ parts

-

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311

$0.135

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DigiPath Technology Company

USA . 311 parts In-Stock

1+ parts

$0.135

100+ parts

-

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311

$0.135

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AZTECH Wire

Italy . 121 parts In-Stock

1+ parts

$10.200

100+ parts

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121

$10.200

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Metaverse IC Inc.

Canada . 20,000 parts In-Stock

1+ parts

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100+ parts

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20,000

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A-Z Elektronik GmbH

Germany . 7,263 parts In-Stock

1+ parts

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7,263

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QUARKTWIN TECHNOLOGY LTD

USA . 2,480 parts In-Stock

1+ parts

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2,480

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Parana Technologies

USA . 867 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

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867

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$0.086

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Corphita

USA . 467 parts In-Stock

1+ parts

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467

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Overview

Unlock the power of efficiency with the STTH1R04 rectifier diode from STMicroelectronics, a leader in semiconductor innovation. Designed for reliability and performance, this high-quality component ensures fast recovery and robust voltage handling, making it perfect for a wide range of applications—from power supplies to industrial systems. With its durable construction and trusted manufacturer backing, the STTH1R04 delivers unmatched value, ensuring your projects run smoothly and effectively. Choose excellence; choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable packaging material ensures longevity and reliability under various environmental conditions, making it suitable for diverse applications.

Config: SINGLE

A single diode configuration offers simplicity and ease of integration into circuits, ideal for straightforward applications.

Maximum Reverse Recovery Time: 0.03 µs

With a low reverse recovery time, this diode minimizes switching losses, allowing for higher efficiency in fast-switching applications.

Package Shape: ROUND

The round package shape facilitates easy mounting and provides efficient thermal dissipation, enhancing overall performance.

No. of Terminals: 2

The two-terminal design simplifies connections and is standard for most electronic circuits, contributing to ease of use.

Package Style (Meter): LONG FORM

The long-form package style offers flexibility in circuit design, allowing for efficient space utilization on PCBs.

Terminal Position: AXIAL

Axial terminal positioning allows for straightforward installation and assembly in various electronic configurations.

Case Connection: ISOLATED

An isolated case connection enhances safety by preventing accidental short circuits, making it reliable for use in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 1.15 V

A low forward voltage drop helps reduce power loss during operation, improving the efficiency of the circuit.

Maximum Output Current: 1 A

This output current rating makes it suitable for moderate power applications without overheating or failure.

Terminal Form: WIRE

Wire terminal form enhances flexibility in connecting to various circuit designs, accommodating for different application needs.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high peak reverse voltage rating enables use in high-voltage applications, providing versatility in different circuit designs.

Maximum Non-Repetitive Peak Forward Current: 30 A

The capability to handle high peak forward currents ensures the diode can cope with sudden surges, protecting circuits from overload.

Diode Element Material: SILICON

Silicon is a widely used material for diodes due to its stable electrical properties and excellent thermal conductivity, ensuring reliability and performance.

Technical Specifications

Diodes & Rectifiers STTH1R04 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH1R04 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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