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BYD33DGPHE3/54

Vishay Intertechnology

BYD33DGPHE3/54 by Vishay Intertechnology

Vishay Intertechnology's BYD33DGPHE3/54 is a single rectifier diode with a max output current of 1A. It has a max repetitive peak reverse voltage of 200V and a min operating temperature of -65°C. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard and avalanche technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,183 parts In-Stock

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10,183

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VNN

France . 3,291 parts In-Stock

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3,291

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Nova Conductors

Japan . 24 parts In-Stock

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24

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Distributors (Availability)

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Ampacity Inc.

Singapore . 386 parts In-Stock

1+ parts

$2.010

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386

$2.010

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AZTECH Wire

Italy . 641 parts In-Stock

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$5.622

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641

$5.622

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Component Stockers USA

USA . 398 parts In-Stock

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$99.990

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398

$99.990

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the exceptional quality and reliability of the BYD33DGPHE3/54 rectifier diode by Vishay Intertechnology. Designed with precision and expertise, this diode offers unparalleled performance in a variety of applications. With its innovative technology and maximum output current of 1 A, this diode delivers superior efficiency and optimal power management. Whether you're looking to enhance your electronic devices or improve your power systems, the BYD33DGPHE3/54 is the perfect choice. Trust Vishay Intertechnology for industry-leading solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and allows for efficient and straightforward installation.

Maximum Reverse Recovery Time: 0.15 us

With a fast reverse recovery time, this diode ensures efficient switching and minimizes power losses in electronic systems.

Package Shape: ROUND

The round shape provides ease of mounting and allows for compact designs in space-restricted applications.

No. of Terminals: 2

The two-terminal design simplifies the connection process and reduces the complexity of the circuit layout.

Package Style (Meter): LONG FORM

The long form package style provides additional protection and facilitates efficient heat dissipation for improved performance.

Minimum Operating Temperature: -65 °C

This diode is designed to operate reliably even in extremely low-temperature environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances the solderability and ensures a secure and reliable electrical connection.

Terminal Position: AXIAL

The axial terminal position simplifies the PCB layout and enables easy integration into existing circuit designs.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and ensures the safe operation of the diode in different systems.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this diode guarantees high reliability and meets the stringent requirements of automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC signals into DC signals, making it essential for power supply and rectification applications.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle high current demands, providing stable and reliable performance.

Technology: AVALANCHE

The avalanche technology allows this diode to withstand high-voltage surges and ensures its robustness under transient conditions.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and improves the overall reliability of the diode.

No. of Elements: 1

This diode consists of a single element, offering simple and straightforward functionality.

Maximum Repetitive Peak Reverse Voltage: 200 V

With a maximum peak reverse voltage of 200 V, this diode can handle high voltage applications with ease.

No. of Phases: 1

This diode operates in a single-phase configuration, making it suitable for a wide range of electronic systems.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures high efficiency, low forward voltage drop, and excellent temperature stability.

Technical Specifications

Diodes & Rectifiers BYD33DGPHE3/54 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-204AL

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.15 us

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYD33DGPHE3/54 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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