Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Winbond Electronics W631GU6MB12J is a DDR3L DRAM with 64MX16 organization, 1.35V nominal voltage, and 105°C max operating temp. Ideal for industrial applications requiring high memory density and fast access mode with self-refresh capability.
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The use of plastic/epoxy material makes this product lightweight and durable.
Being surface mountable allows for easy and convenient installation on PCBs.
The rectangular shape helps in efficient space utilization on the circuit board.
The synchronous operation ensures precise timing and improved performance.
Self-refresh capability helps in power saving and maintaining data integrity.
The low nominal supply voltage reduces power consumption for energy efficiency.
With 96 terminals, this product offers great connectivity options.
The grid array package style with a thin profile and fine pitch enhances signal integrity.
A high maximum operating temperature range ensures reliability in various environments.
The 64MX16 organization provides ample storage capacity for data-intensive applications.
The wide temperature range makes this product suitable for use in extreme conditions.
Bottom terminal position simplifies the installation process on the PCB.
The low seated height allows for compact and slim device designs.
The narrow width of 7.5mm enables easy integration into space-constrained systems.
The low minimum supply voltage ensures compatibility with a wide range of systems.
The length of 13mm offers a balance between compact size and functionality.
Industrial-grade temperature tolerance ensures reliable operation in harsh environments.
Multi-bank page burst access mode enhances data transfer efficiency and speed.
The CMOS technology used in this product offers low power consumption and high-speed performance.
The ball terminal form facilitates easy soldering and reliability in connection.
With a high number of words, this product can store a large amount of data.
The memory width of 16 bits allows for efficient data processing and transfer.
The small terminal pitch of 0.8mm enables high-density mounting on the PCB.
The 64M words code indicates the high capacity and performance of this product.
The high maximum supply voltage tolerance ensures robust operation under varying conditions.
The high memory density enables storing a vast amount of information in a compact space.
The DDR3L DRAM type offers high-speed data transfers and low power consumption for optimal performance.
DRAM W631GU6MB12J attributes and parameters. Explore more DRAM devices from Winbond Electronics
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W631GU6MB12J Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.32
SB
8542.32.00.15
Winbond was established in September 1987 and listed on Taiwan Stock Exchange in 1995, and is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fabs, which are the factories with high levels of intelligent technology and automation, are located in Taichung and Kaohsiung Science Park. Winbond is a Specialty memory IC company. From product design, research and development, and wafer fabrication to the marketing of brand name products, Winbond endeavors to provide its global clientele with total memory solutions. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash,Specialty DRAM and Mobile DRAM. The Company is the only one in Taiwan with the ability to develop DRAM and FLASH products in-house. Our advantages of technological autonomy and prudent capacity strategies enable us to build a highly flexible production system and create synergy among product lines, which allows us to meet the diverse demands of customers while building our brand image. Winbond’s products are used extensively in handheld devices, consumer electronics, and computer peripherals. We also focus on high-barrier, high-quality applications, such automotive and industrial electronics. Winbond has set up operations and distributor networks in the USA, Japan, China, Hong Kong , Israel ,and Germany to serve clients better and expand the depth and breadth of product sales. With regard to quality, Winbond pursues excellence and zero defects, and is certified in a number of quality and environmental safety management systems. It is also the first memory manufacturer in Taiwan to obtain the ISO 26262 certification, which is the highest standard for automotive functional safety. Winbond also always adheres to high standards of corporate governance; we have been evaluated by the Taiwan Stock Exchange as one of the top 20% listed corporate governance. Winbond will continue to provide customer-oriented services. Furthermore, by leveraging the strength of our advanced semiconductor design and manufacturing know-how, observing the core values of "accountability, innovation and synergy" and incorporating the corporate spirit of "execution, innovation and passion" in all operational activities, Winbond will strive towards the goal of becoming a hidden champion in providing sustainable semiconductors technology to enrich human life.
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
1N4148
Laube Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
BAV99
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
2N2222A
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
EPCS4SI8N
Altera
CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
SS14
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
LM107H/883C
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
SMBJ18CA
Jiangsu Jiejie Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Goodwork Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sensitron Semiconductor
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
AS4C8M16SA-6TINTR
Alliance Memory
Alliance Memory's AS4C8M16SA-6TINTR is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at -40 to 85 °C. Ideal for industrial applications, it features common I/O type, self-refresh mode, and small outline package style.
HYB25D512160BE-6
Qimonda Ag
DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
W958D8NBYA5I
Winbond Electronics
Winbond Electronics' W958D8NBYA5I is a 32MX8 DRAM with 268MB memory density. Operating at 200MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices with limited power consumption.
S70KS1282GABHV020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Minimum Operating Temperature: -40 Cel;
IS42S16320F-7BLI
Integrated Silicon Solution
IS42S16320F-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
K4D64163HF-TC40
Samsung
Samsung's K4D64163HF-TC40 is a 4MX16 DDR1 DRAM with 66 terminals, operating at 250 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS42S16400J-7BL
IS42S16400J-7BL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access in commercial temperature environments.
AS4C32M16SB-6TINTR
SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
HY5DU573222FP-33
Sk Hynix
SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.
MT40A256M16GE-083EIT:B
Micron Technology
Micron Technology's MT40A256M16GE-083EIT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
MT46H128M32L2MC-6WT:B
Micron Technology's MT46H128M32L2MC-6WT:B is a 128MX32 DDR1 DRAM with 240 terminals and operates at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.
IS43DR16160A-3DBLI-TR
IS43DR16160A-3DBLI-TR by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. Operating at 1.8V, it offers 16M words and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times.
AS4C4M16SA-6BINTR
AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.
MT48LC8M16A2P-6AXIT:L
Micron Technology's MT48LC8M16A2P-6AXIT:L is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. Ideal for applications requiring fast access time and high memory density, such as automotive electronics or industrial control systems.
MT41K512M16VRP-107AAT:P
Micron Technology's MT41K512M16VRP-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
M471B2873FHS-CH9
Samsung's M471B2873FHS-CH9 DDR DRAM MODULE offers 128MX64 organization, 1.5V nominal voltage, and operates in synchronous mode. Ideal for applications requiring high memory density and fast access times with a temperature range of 0-95°C.
MT46V16M16P-5BIT:MTR
Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.
MT53E256M32D2DS-046IT:B
Micron Technology's MT53E256M32D2DS-046IT:B is a 256MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates in an industrial temperature range and has a very thin profile package style. This memory module is commonly used in applications that require high-speed data processing and reliable performance.
AS4C256M16D3A-12BIN
Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
MT53D512M32D2DS-053AIT:D
Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
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W631GG6NB-12
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;
W631GG6NB12I
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;
W631GU6NB09I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;
W631GG6NB-09
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;
W631GU6NB11I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96;
W631GG6NB09I
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 20 ns;
W631GU6NB-09
The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.
W631GU6NB-12
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA96,9X16,32;
W631GU6NB12I
W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
W631GG6NB-11
DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 20 ns;
W631GG6NB11I
DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
W631GU6MB-12
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
W631GU6MB12I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;
W631GU6MB-11
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;
W631GU6MB-15
DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;
W631GU6MB09I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
W631GU6MB09J
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 105 Cel;
W631GU6MB11I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
W631GU6MB15I
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 7.5 mm;
W631GU6MB15J
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;
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