Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Vishay Intertechnology's SI1016CX-T1-GE3 is a Small Signal FET with N/P-channel types, 2 elements with built-in diode. Ideal for switching applications, it has a max drain current of 0.6A, on-resistance of 0.396 ohm, and operates at up to 150°C. Suitable for surface mount with a rectangular package shape and matte tin terminal finish.
Median Price
$0.103
Lifecycle Status
Suppliers In-Stock
21
In-Stock Inventory
1k+
Newark
1+ parts
$0.668
100+ parts
$0.265
1k+ parts
-
10k+ parts
TTI
$0.090
Avnet
Element14
$0.340
$0.228
$0.224
Arrow
$0.101
Verical
Farnell
$0.104
TTI Europe
Chip1Stop
$0.222
$0.131
Nova Conductors
$0.220
TME
$0.550
$0.225
$0.134
$0.128
Chip Stock
Vyrian
NAC Semi
$0.450
ComSIT Distribution GmbH
Rutronik
$0.113
NexGen Digital
Semtec, LLC
ACDS - Activité Composants Distribution Service
Bristol Electronics
$0.244
$0.146
Dan-Mar Components
Ampacity Inc.
$0.063
Semicontronic
$0.061
Argo Parts USA
$0.160
$0.155
Netroflash
Modulus Dynamics
$0.512
Corohmni
$0.604
Aztec Data Supply Inc.
$0.861
Advanced Electronics
$1.781
$1.692
Glotronic Ltd.
Kepictronics
Futuretech Components
Authorized Procurement Solutions
Continental Prestige Electronics
$0.120
$0.114
Benley Electronics
Eastek
S.R.D Solutions
Robosynatics
$1.455
Lucentia Tech
This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.
Having both N-channel and P-channel options allows for versatile applications in different circuit configurations.
The separate configuration with built-in diode makes it easier to integrate into circuits and improves overall efficiency.
Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities.
Surface mount technology allows for easy and convenient installation in compact electronic devices.
With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without damage, making it reliable in various circuits.
The high maximum drain current rating of 0.6A allows for handling of larger current loads, making it suitable for a wide range of applications.
With a maximum power dissipation of 0.22W, this transistor can effectively handle heat dissipation, ensuring stable operation under varying conditions.
The use of metal-oxide semiconductor technology provides high performance and reliability in a small form factor.
With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, increasing its versatility.
The low drain-source on resistance of 0.396 ohms ensures minimal power loss and improved efficiency in switching operations.
Small Signal Field Effect Transistors (FET) SI1016CX-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SI1016CX-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev Material Chgs 1/Jul/2021
PCN Assembly/Origin - Manufacturing Capacity Expansion 27/Jul/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
SMBJ18CA
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
EU2B-YS303C
Idec
ROTARY SWITCH;
Micro Commercial Components
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
Onsemi
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
LD1117S33CTR
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
BSS138-TP
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
General Semiconductor
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
BS170F
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: SWITCHING; No. of Elements: 1;
BSS123LT3
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain Current (ID): .17 A;
BSS84PWH6327
Infineon Technologies
BSS84PWH6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.15A max drain current, and 8 ohm max on resistance. It is used in small outline packages for applications requiring low power dissipation and high operating temperatures up to 150°C.
IRLML2803GTRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-236AB;
BSS138NH6433
Infineon's BSS138NH6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in automotive electronics due to AEC-Q101 and IEC-61249-2-21 compliance.
MMBF170LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
NDS7002A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
ZVP1320FTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL;
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
FDMA1032CZ
FDMA1032CZ by Onsemi is a Small Signal FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications. With a max drain current of 3.7A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS123LT3G
BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
2N7000
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
MGSF1N02LT1G
MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
FDC658AP
The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.
IRLML2803TRPBF-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .25 ohm; JEDEC-95 Code: TO-236AB; JESD-30 Code: R-PDSO-G3;
SI1317DL-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI1317DL-T1-GE3 is a P-channel FET with 20V breakdown voltage and 1.4A drain current, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 0.15 ohm on-resistance and 44pF feedback capacitance. This small outline transistor has a max power dissipation of 0.5W and can withstand temperatures from -50 to 150°C.
FDC640P
The Onsemi FDC640P is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.5A, 0.053 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
BSS138TA
Diodes Incorporated
BSS138TA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. It has a 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
IRF6216TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 200 mJ; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 150 V;
2N7002DW
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
SI1012CR-T1-GE3
SI1012CR-T1-GE3 by Vishay Intertechnology is a N-channel FET with 20V DS breakdown voltage and 0.63A ID. Ideal for switching applications, it operates in enhancement mode with 0.396 ohm RDS(on). Its small outline package and -55 to 150°C operating range make it suitable for various electronic designs.
SI1029X-T1-GE3
SI1029X-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode for switching applications. Features include 60V DS breakdown voltage, 0.305A max drain current, and 1.4 ohm max drain-source resistance. Ideal for surface mount designs in various electronic systems.
SI1016X-T1-GE3
Vishay Intertechnology's SI1016X-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements, and built-in diode for switching applications. Features include max drain current of 0.485A, max power dissipation of 0.28W, and max operating temp of 150°C. Ideal for compact designs requiring high performance in surface-mount configurations.
SI1062X-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
SI1024X-T1-GE3
Vishay Intertechnology's SI1024X-T1-GE3 is a N-channel FET with 2 elements, diode, and resistor for switching applications. Features include max drain current of 0.485A, max power dissipation of 0.25W, and max operating temp of 150°C. Ideal for surface mount designs requiring small outline package style.
SI1012R-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; No. of Terminals: 3; Terminal Position: DUAL;
SI1022R-T1-GE3
Vishay Intertechnology's SI1022R-T1-GE3 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With 0.25W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline package style.
SI1026X-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
SI1034CX-T1-GE3
Vishay Intertechnology's SI1034CX-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.61A, min DS breakdown voltage of 20V, and max power dissipation of 0.22W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
SI1013R-T1-GE3
SI1013R-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.35A Drain Current, and 1.2 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range. It comes in a RECTANGULAR package with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
SI1013CX-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
SI1012X-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .275 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
SI1034X-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
SI1016X-E3
Vishay Siliconix
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved