Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SI1029X-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode for switching applications. Features include 60V DS breakdown voltage, 0.305A max drain current, and 1.4 ohm max drain-source resistance. Ideal for surface mount designs in various electronic systems.
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Plastic/Epoxy material provides good insulation and protection for the internal components of the transistor.
Having both N-channel and P-channel types allows for versatility in circuit design and application.
The built-in diode simplifies circuit design and improves efficiency.
Designed specifically for switching applications, ensuring reliable performance in such scenarios.
Surface mount capability makes the transistor easier to solder onto circuit boards, saving space and improving efficiency.
With a minimum breakdown voltage of 60V, this transistor can handle higher voltages safely.
Capable of handling a maximum drain current of 0.305A, suitable for a variety of low power applications.
Efficient power dissipation capabilities ensure reliable operation and prevent overheating.
Metal-oxide semiconductor technology offers high efficiency and reliability in signal amplification and switching.
With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.
Low drain-source on resistance ensures efficient conduction and minimal power loss.
Small Signal Field Effect Transistors (FET) SI1029X-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SI1029X-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev Material Chgs 1/Jul/2021
PCN Assembly/Origin - Manufacturing Capacity Expansion 27/Jul/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
SS14
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
ISO1050DUBR
Texas Instruments
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
BAV99
Toshiba
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Sangdest Microelectronics (Nanjing)
Onsemi
Transys Electronics
Zetex Plc
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
2N2222A
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
SS495A-SP
Honeywell Sensing And Control
SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.
FDC2512
The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.
2N7002
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
FDV301N
FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
BSS306NH6327XTSA1
Infineon Technologies
BSS306NH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 30V DS Breakdown Voltage and 2.3A ID. It features a 0.057 ohm RDS(on) and 17pF Crss, suitable for small signal applications in electronics requiring high drain current capabilities. The PLASTIC/EPOXY package with GULL WING terminals makes it ideal for surface mount designs in enhancement mode operation.
BSS84AKS,115
NXP Semiconductors
NXP Semiconductors' BSS84AKS,115 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.16A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode.
BSS123
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
2N7002W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
BSS138NH6327XTSA2
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
BS170
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: O-PBCY-W3; Transistor Application: SWITCHING;
2N7002K
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Transistor Element Material: SILICON;
ZXMN6A07FTA
ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
BSS139IXTSA1
Small Signal Field-Effect Transistors;
2N7002DWS-7
Diodes Inc. 2N7002DWS-7 is a N-channel FET with 60V DS breakdown voltage, 0.247A max drain current, and 4 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with MIL-STD-202 compliance.
MGSF1N03LT1G
MGSF1N03LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.6A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology, it offers reliable performance in small outline packages at up to 150°C.
DMP4047LFDE-7
DMP4047LFDE-7 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage, 6A max drain current, and 0.033 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C operating temp.
LND150K1-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138W-G
Comchip Technology
Comchip Technology's BSS138W-G is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 0.2W power dissipation and -55 to 150 °C temperature range.
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
NX3008PBK,215
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JEDEC-95 Code: TO-236AB;
SI2319DS-T1-GE3
Vishay Intertechnology
SI2319DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The transistor features a built-in DIODE, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package style.
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SI1016CX-T1-GE3
Vishay Intertechnology's SI1016CX-T1-GE3 is a Small Signal FET with N/P-channel types, 2 elements with built-in diode. Ideal for switching applications, it has a max drain current of 0.6A, on-resistance of 0.396 ohm, and operates at up to 150°C. Suitable for surface mount with a rectangular package shape and matte tin terminal finish.
SI1012CR-T1-GE3
SI1012CR-T1-GE3 by Vishay Intertechnology is a N-channel FET with 20V DS breakdown voltage and 0.63A ID. Ideal for switching applications, it operates in enhancement mode with 0.396 ohm RDS(on). Its small outline package and -55 to 150°C operating range make it suitable for various electronic designs.
SI1016X-T1-GE3
Vishay Intertechnology's SI1016X-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements, and built-in diode for switching applications. Features include max drain current of 0.485A, max power dissipation of 0.28W, and max operating temp of 150°C. Ideal for compact designs requiring high performance in surface-mount configurations.
SI1062X-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
SI1024X-T1-GE3
Vishay Intertechnology's SI1024X-T1-GE3 is a N-channel FET with 2 elements, diode, and resistor for switching applications. Features include max drain current of 0.485A, max power dissipation of 0.25W, and max operating temp of 150°C. Ideal for surface mount designs requiring small outline package style.
SI1012R-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .175 W; No. of Terminals: 3; Terminal Position: DUAL;
SI1022R-T1-GE3
Vishay Intertechnology's SI1022R-T1-GE3 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With 0.25W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline package style.
SI1026X-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
SI1034CX-T1-GE3
Vishay Intertechnology's SI1034CX-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.61A, min DS breakdown voltage of 20V, and max power dissipation of 0.22W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
SI1013R-T1-GE3
SI1013R-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.35A Drain Current, and 1.2 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range. It comes in a RECTANGULAR package with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
SI1013CX-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
SI1012X-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .275 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
SI1034X-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
SI1029X
Vishay Siliconix
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: 1.4 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI1026X-T1-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 60 V;
SI1029X-T1-E3
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 6; Operating Mode: ENHANCEMENT MODE;
SI1029X-T1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .305 A; Minimum DS Breakdown Voltage: 60 V;
SI1023X-T1-GE3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 20 V;
SI1025X-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW THRESHOLD; JESD-30 Code: R-PDSO-G6; Maximum Drain-Source On Resistance: 4 ohm;
SI1029X-E3
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G6; Terminal Form: GULL WING;
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