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1N6297A-E3/51

Vishay Intertechnology

1N6297A-E3/51 by Vishay Intertechnology

Vishay Intertechnology's 1N6297A-E3/51 is a unidirectional Trans Voltage Suppressor Diode with 1500W peak power dissipation. Ideal for transient suppression applications, it operates b/w -55°C to 175°C and has a breakdown voltage range of 114-126V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,162 parts In-Stock

1+ parts

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5,162

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VNN

France . 2,218 parts In-Stock

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2,218

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Nova Conductors

Japan . 650 parts In-Stock

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650

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 369 parts In-Stock

1+ parts

$2.010

100+ parts

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369

$2.010

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AZTECH Wire

Italy . 743 parts In-Stock

1+ parts

$17.360

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743

$17.360

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Bastille Electronics

Australia . 2,587 parts In-Stock

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2,587

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Overview

Experience the superior quality and reliability of Vishay Intertechnology with the 1N6297A-E3/51 transient suppression device. This product offers unmatched protection against voltage spikes, ensuring optimal performance and longevity for your electronic devices. Ideal for a wide range of applications, this diode is perfect for safeguarding sensitive equipment in industrial, automotive, and consumer electronics. Invest in peace of mind with Vishay Intertechnology's trusted brand and innovative solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it a reliable choice for transient suppression.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it user-friendly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively handle surges and spikes, ensuring reliable performance.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various systems, enhancing versatility.

No. of Terminals: 2

The two terminals provide simple connectivity, reducing installation time and effort.

Package Style (Meter): LONG FORM

The long form factor allows for easy handling and installation, making it convenient for users.

Maximum Operating Temperature: 175 °C

The high operating temperature range ensures that the device can perform effectively in different environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the device to function reliably in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides a secure connection and prevents corrosion, ensuring long-term reliability.

Terminal Position: AXIAL

The axial terminal position simplifies installation and ensures proper alignment in the circuit.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents electrical interference, making it a dependable choice.

Maximum Power Dissipation: 6.5 W

The low power dissipation helps in reducing energy consumption and heat generation, improving efficiency.

Minimum Breakdown Voltage: 114 V

The minimum breakdown voltage ensures protection against voltage spikes, safeguarding connected devices.

Maximum Breakdown Voltage: 126 V

The maximum breakdown voltage offers a safety margin, providing additional protection for sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type ensures efficient suppression of transients and voltage spikes, safeguarding equipment.

Technology: AVALANCHE

The avalanche technology allows for rapid response to surges, enhancing the device's protective capabilities.

Terminal Form: WIRE

The wire terminal form facilitates easy connection and installation, simplifying the setup process.

Maximum Repetitive Peak Reverse Voltage: 102 V

The maximum repetitive peak reverse voltage rating offers protection against continuous voltage fluctuations, ensuring long-term reliability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only allows current flow in one direction, enhancing its protective capabilities.

Diode Element Material: SILICON

The silicon diode element material provides high conductivity and durability, making it suitable for transient suppression applications.

Technical Specifications

Transient Suppression Devices 1N6297A-E3/51 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Maximum Breakdown Voltage:

126 V

Minimum Breakdown Voltage:

114 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

102 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6297A-E3/51 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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