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1N6275AG

Onsemi

1N6275AG by Onsemi

1N6275AG by Onsemi is a Zener diode with 15V breakdown voltage, 1500W peak power dissipation, and 21.2V clamping voltage. It is used in transient suppression applications to protect circuits from voltage spikes. Operating temperature ranges from -65°C to 150°C.

Median Price

$0.496

Lifecycle Status

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11

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1k+

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Chip1Stop

Japan . 10 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$0.214

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DF Sales Co.

USA . 44 parts In-Stock

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$4.970

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DF Sales Co.

USA . 44 parts In-Stock

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Chip Stock

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Digiode

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ComSIT Distribution GmbH

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ComSIT USA

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VNN

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Vyrian

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ACDS - Activité Composants Distribution Service

France . 276 parts In-Stock

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Continental Prestige Electronics

USA . 1,537 parts In-Stock

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$0.095

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Aztec Data Supply Inc.

USA . 1,571 parts In-Stock

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$0.102

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Aranea Global

USA . 50 parts In-Stock

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Corohmni

South Africa . 91 parts In-Stock

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Argo Parts USA

USA . 4,172 parts In-Stock

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$0.208

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Semicontronic

India . 497 parts In-Stock

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$0.422

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$0.411

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$0.409

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Ampacity Inc.

Singapore . 451 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Cyclops Electronics Ltd (Excess)

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GreenTree Electronics

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Overview

Enhance your electronic devices with the 1N6275AG by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by the trusted brand Onsemi, this product offers unmatched protection against voltage spikes, ensuring the smooth operation of your equipment. Ideal for a wide range of applications, this Zener diode is a must-have for any electronics enthusiast or professional. Say goodbye to worries about power surges and trust in the proven performance of the 1N6275AG to keep your devices safe and running smoothly. Elevate your electronics game today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the device.

Config:

SINGLE - Single configuration simplifies installation and maintenance.

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W - High dissipation capability ensures reliable protection against power surges.

Nominal Breakdown Voltage:

15 V - Consistent breakdown voltage for efficient suppression of over-voltage conditions.

Package Shape:

ROUND - Round shape allows for easy integration into various systems.

No. of Terminals:

2 - Two terminals enable straightforward connections.

Package Style (Meter):

LONG FORM - The long form package style allows for efficient installation and placement.

Maximum Operating Temperature:

150 °C - High operating temperature range ensures performance in various environments.

Minimum Operating Temperature:

65 °C - Low operating temperature ensures reliability in extreme cold conditions.

Terminal Finish:

TIN - Tin finish provides corrosion resistance for long-lasting performance.

Terminal Position:

AXIAL - Axial terminal position allows for easy mounting and connection.

Case Connection:

ISOLATED - Isolated case connection prevents interference and improves overall safety.

Maximum Power Dissipation:

5 W - Low power dissipation ensures energy efficiency and long-term use.

Minimum Breakdown Voltage:

14.3 V - With a minimum breakdown voltage, the device offers reliable protection against voltage spikes.

Peak Reflow Temperature °C:

260 - High peak reflow temperature ensures secure soldering during installation.

Maximum Breakdown Voltage:

15.8 V - High maximum breakdown voltage offers extra protection against sudden voltage increases.

Reference Standard:

UL RECOGNIZED - UL recognized reference standard signifies compliance with safety standards.

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE - This diode type is specifically designed for transient suppression applications.

Technology:

ZENER - Zener technology provides precise voltage regulation for efficient suppression of over-voltage conditions.

Terminal Form:

WIRE - Wire terminal form allows for easy connection with other components.

Maximum Repetitive Peak Reverse Voltage:

12.8 V - With a maximum repetitive peak reverse voltage, the device can handle multiple voltage spikes.

Polarity:

UNIDIRECTIONAL - Unidirectional polarity ensures protection in a specific direction.

Maximum Clamping Voltage:

21.2 V - High maximum clamping voltage ensures effective suppression of voltage spikes.

Diode Element Material:

SILICON - Silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices 1N6275AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

15.8 V

Minimum Breakdown Voltage:

14.3 V

Nominal Breakdown Voltage:

15 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

21.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

12.8 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6275AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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