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1N6268CARL4

Onsemi

1N6268CARL4 by Onsemi

1N6268CARL4 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6.4V Max Reverse Voltage, 7.5V Clamping Voltage, and Bidirectional Polarity. Ideal for transient suppression in electronic circuits to protect against voltage spikes and surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,036 parts In-Stock

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Digiode

USA . 1,929 parts In-Stock

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1,929

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 362 parts In-Stock

1+ parts

$0.516

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362

$0.516

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Northwest PG Solutions

USA . 1,042 parts In-Stock

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$0.568

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1,042

$0.568

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Kulean Microsystems

USA . 7,028 parts In-Stock

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7,028

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Problanco Electronics

Mexico . 4,269 parts In-Stock

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4,269

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SupplyDigital Components

Austria . 2,634 parts In-Stock

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2,634

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TANS Electronics

Latvia . 2,367 parts In-Stock

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2,367

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Corphita

USA . 1,823 parts In-Stock

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1,823

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UHIMA Technologies

Türkiye . 230 parts In-Stock

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Corohmni

South Africa . 212 parts In-Stock

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Overview

Protect your electronic devices with the high-quality 1N6268CARL4 TRANS VOLTAGE SUPPRESSOR DIODE by Onsemi. Designed to withstand transient voltage spikes, this diode ensures reliable performance and longevity for your equipment. Whether you're in need of surge protection for consumer electronics, industrial machinery, or automotive applications, the Onsemi 1N6268CARL4 delivers peace of mind and superior protection. Trust Onsemi's expertise in transient suppression devices and safeguard your investments with this top-notch product.

Feature Benefit Bullets

Nominal Breakdown Voltage: 7.5 V

The high nominal breakdown voltage of 7.5 V ensures protection against voltage spikes and surges, making this product reliable for preventing damage to sensitive electronic components.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures a secure connection, making installation easy and durable.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type of TRANS VOLTAGE SUPPRESSOR DIODE ensures efficient suppression of transient voltage spikes, protecting connected devices from damage.

Maximum Repetitive Peak Reverse Voltage: 6.4 V

With a maximum repetitive peak reverse voltage of 6.4 V, this product can effectively suppress voltage spikes and surges without exceeding its limitations, ensuring long-term reliability.

Polarity: BIDIRECTIONAL

The bidirectional polarity of this transient suppression device allows it to protect against voltage spikes in both directions, providing comprehensive protection for connected equipment.

Maximum Clamping Voltage: 7.5 V

The maximum clamping voltage of 7.5 V indicates the level at which the device will limit the voltage during a transient event, preventing it from exceeding this value and ensuring protection for connected devices.

Technical Specifications

Transient Suppression Devices 1N6268CARL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

7.5 V

Maximum Clamping Voltage:

7.5 V

JESD-609 Code:

e0

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

1N6268CARL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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