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1N6269ARL

Onsemi

1N6269ARL by Onsemi

1N6269ARL by Onsemi is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 8.2V nominal reference voltage and 1500W peak reverse power dissipation. It operates b/w -65 to 175 °C, ideal for transient suppression in electronics with a breakdown voltage range of 7.79-8.61V.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,210 parts In-Stock

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Vyrian

USA . 429 parts In-Stock

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Native Components

USA . 156 parts In-Stock

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$16.510

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$16.510

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Northwest PG Solutions

USA . 1,969 parts In-Stock

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$18.161

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$16.345

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TANS Electronics

Latvia . 7,347 parts In-Stock

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SupplyDigital Components

Austria . 6,553 parts In-Stock

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Kulean Microsystems

USA . 4,830 parts In-Stock

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Corphita

USA . 736 parts In-Stock

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UHIMA Technologies

Türkiye . 643 parts In-Stock

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Problanco Electronics

Mexico . 334 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 1N6269ARL transient suppression device by Onsemi. This essential component offers superior protection against voltage spikes, ensuring your electronics stay safe and operational. With a maximum power dissipation of 1500W and a nominal reference voltage of 8.2V, this diode is ideal for a wide range of applications. Trust in Onsemi's expertise and innovation to provide you with the best-in-class solution for all your transient suppression needs. Choose the 1N6269ARL for peace of mind and unbeatable performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical protection and insulation for the device, ensuring durability and reliability in various applications.

Working Test Current: 10 mA

Capable of handling high transient currents, providing effective suppression of electrical transients in the circuit.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures the device can effectively handle surges and spikes in the circuit without getting damaged.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function effectively in various environmental conditions.

Nominal Reference Voltage: 8.2 V

Provides precise voltage regulation and protection, ensuring that the circuit remains safe from voltage surges.

Technical Specifications

Transient Suppression Devices 1N6269ARL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

8.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

10 mA

Trade Compliance

1N6269ARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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