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1N6268A

Onsemi

1N6268A by Onsemi

1N6268A by Onsemi is a Zener diode with a breakdown voltage of 7.5V, max power dissipation of 5W, and clamping voltage of 11.3V. It is used for transient suppression in electronic circuits to protect against voltage spikes and surges.

Median Price

$0.315

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Verical

USA . 10,000 parts In-Stock

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Vyrian

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DF Sales Co.

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Component Electronics Inc.

Canada . 802 parts In-Stock

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Electronics Depot

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Digiode

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Corel Iberica Componentes, S.L.

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PC Components Company LLC

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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LittleDiode

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Century Electronics Ltd.

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Advanced Electronics

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Corohmni

South Africa . 153 parts In-Stock

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Problanco Electronics

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Overview

Looking for reliable transient suppression devices? Look no further than the 1N6268A by Onsemi. With a reputation for top-notch quality, Onsemi delivers high-performance products that meet industry standards. The 1N6268A is perfect for applications where protection against voltage surges is crucial. Offering a nominal breakdown voltage of 7.5V and maximum clamping voltage of 11.3V, this Zener diode ensures your electronics stay safe and secure. Trust Onsemi to provide you with the protection you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for applications where weight and durability are important factors.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation value, this device can handle large transient surges, ensuring reliable protection for sensitive equipment.

Nominal Breakdown Voltage: 7.5 V

The nominal breakdown voltage of 7.5 V ensures effective suppression of voltage spikes and transients, safeguarding connected devices.

Package Shape: ROUND

The round package shape offers easy installation and compact design, making it suitable for various applications where space is limited.

Maximum Power Dissipation: 5 W

The device can handle continuous power dissipation of 5 W, providing long-term protection against transient overvoltages without overheating.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diode technology ensures fast response times and reliable protection against voltage transients, making it an excellent choice for sensitive electronics.

Maximum Clamping Voltage: 11.3 V

The maximum clamping voltage of 11.3 V limits the peak voltage across connected devices during transient events, minimizing the risk of damage.

Technical Specifications

Transient Suppression Devices 1N6268A attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.5 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

11.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6268A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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