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1N6269A

Onsemi

1N6269A by Onsemi

1N6269A by Onsemi is a Zener diode with 8.2V breakdown voltage and 1500W max non-repetitive peak reverse power dissipation. It is a unidirectional transient suppression device in plastic/epoxy package, ideal for clamping voltages up to 12.1V in various electronic applications.

Median Price

$0.315

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 10,000 parts In-Stock

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$0.315

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$0.268

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$0.315

$0.268

Distributors (In-Stock)

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Vyrian

USA . 49,171 parts In-Stock

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$0.230

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American Microsemiconductor Inc.

USA . 115 parts In-Stock

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$0.950

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$0.950

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Chip Stock

USA . 34,000 parts In-Stock

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Digiode

USA . 1,906 parts In-Stock

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R&J Components

USA . 1,400 parts In-Stock

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LWI Electronics Inc

India . 463 parts In-Stock

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Pegasus Components GmbH

Germany . 400 parts In-Stock

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PC Components Company LLC

USA . 350 parts In-Stock

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350

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Bristol Electronics

USA . 350 parts In-Stock

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350

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Electronic Expediters

USA . 70 parts In-Stock

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Microfarads

USA . 68 parts In-Stock

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CirComp Electronics, Inc.

USA . 50 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 19 parts In-Stock

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NAC Semi

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Resion

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LittleDiode

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Native Components

USA . 192 parts In-Stock

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$0.194

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$0.186

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$0.186

Northwest PG Solutions

USA . 2,389 parts In-Stock

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$0.214

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$0.188

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Corohmni

South Africa . 413 parts In-Stock

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$0.230

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Component Stockers USA

USA . 501 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 4,661 parts In-Stock

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SupplyDigital Components

Austria . 3,259 parts In-Stock

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Kulean Microsystems

USA . 2,972 parts In-Stock

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Glotronic Ltd.

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Corphita

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Problanco Electronics

Mexico . 1,245 parts In-Stock

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UHIMA Technologies

Türkiye . 125 parts In-Stock

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Overview

Discover the powerful protection and reliability of the 1N6269A by Onsemi. As a leading manufacturer in the industry of Transient Suppression Devices, Onsemi delivers top-quality products that meet high standards. The 1N6269A offers customers peace of mind with its impressive peak reverse power dissipation and nominal breakdown voltage. Whether you need to safeguard sensitive electronics or equipment from voltage spikes, this Zener diode is the perfect solution. Trust Onsemi for superior performance and unmatched value in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the device, making it suitable for various environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

This high power dissipation capability allows the device to handle sudden surges in voltage effectively, protecting connected equipment from damage.

Nominal Breakdown Voltage: 8.2 V

The nominal breakdown voltage ensures that the device activates at the desired voltage level, providing reliable overvoltage protection.

Package Shape: ROUND

The round package shape is compact and easy to install, making it suitable for various applications where space is limited.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the device meets stringent safety and performance standards, giving users confidence in its reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of transients, offering reliable protection for connected devices.

Maximum Clamping Voltage: 12.1 V

The maximum clamping voltage limits the voltage across connected equipment during transient events, preventing damage to sensitive components.

Technical Specifications

Transient Suppression Devices 1N6269A attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Nominal Breakdown Voltage:

8.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

12.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6269A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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