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1N6269AG

Onsemi

1N6269AG by Onsemi

1N6269AG by Onsemi is a Zener diode with 8.2V breakdown voltage and 1500W max non-repetitive peak reverse power dissipation. It is a unidirectional transient suppression device in plastic/epoxy package, ideal for clamping voltages up to 12.1V in various electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,480 parts In-Stock

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Vyrian

USA . 192 parts In-Stock

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Native Components

USA . 64 parts In-Stock

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$0.746

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64

$0.746

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Northwest PG Solutions

USA . 1,820 parts In-Stock

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$0.821

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$0.821

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TANS Electronics

Latvia . 7,244 parts In-Stock

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Kulean Microsystems

USA . 6,315 parts In-Stock

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SupplyDigital Components

Austria . 5,358 parts In-Stock

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Kepictronics

USA . 4,970 parts In-Stock

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Corphita

USA . 1,910 parts In-Stock

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Problanco Electronics

Mexico . 1,370 parts In-Stock

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UHIMA Technologies

Türkiye . 484 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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Overview

Discover the power of the 1N6269AG by Onsemi, a top-quality transient suppression device that provides unparalleled protection against voltage spikes. Manufactured by the renowned Onsemi, this product offers reliability and durability in a variety of applications. With a maximum peak reverse power dissipation of 1500W and a nominal breakdown voltage of 8.2V, this device ensures your electronics stay safe from harmful surges. Trust in the value and benefits of the 1N6269AG to keep your devices running smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the device, ensuring long-term reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High maximum power dissipation allows the device to handle large transient surges effectively, protecting connected equipment.

Nominal Breakdown Voltage: 8.2 V

Precise breakdown voltage ensures reliable protection against overvoltage events within tight tolerances.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes provide efficient transient suppression, safeguarding sensitive electronics from voltage spikes.

Maximum Clamping Voltage: 12.1 V

High clamping voltage ensures that the device limits the voltage spike to a safe level, protecting downstream components.

Technical Specifications

Transient Suppression Devices 1N6269AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Nominal Breakdown Voltage:

8.2 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

12.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6269AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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