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1N6290AG

Onsemi

1N6290AG by Onsemi

1N6290AG by Onsemi is a Zener diode with a breakdown voltage of 62V, ideal for transient suppression applications. With a max power dissipation of 5W and clamping voltage of 85V, it ensures protection against voltage spikes. This unidirectional diode operates b/w -65°C to 150°C, making it suitable for various electronic devices.

Median Price

$0.465

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

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$0.540

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$0.540

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Chip Stock

USA . 42,000 parts In-Stock

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VNN

France . 5,449 parts In-Stock

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Digiode

USA . 2,066 parts In-Stock

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Vyrian

USA . 432 parts In-Stock

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Carlin Systems, Inc.

USA . 200 parts In-Stock

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Sensible Micro Corp

USA . 40 parts In-Stock

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$0.390

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$0.360

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40

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$0.390

$0.360

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 252 parts In-Stock

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$0.390

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252

$0.390

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Netroflash

USA . 100 parts In-Stock

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$0.540

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$0.529

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100

$0.540

$0.529

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Ampacity Inc.

Singapore . 1,376 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 373 parts In-Stock

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$9.250

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SupplyDigital Components

Austria . 7,398 parts In-Stock

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Problanco Electronics

Mexico . 6,379 parts In-Stock

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Continental Prestige Electronics

USA . 4,305 parts In-Stock

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Corphita

USA . 2,113 parts In-Stock

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Kulean Microsystems

USA . 1,972 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Perfect Parts

USA . 1,960 parts In-Stock

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Argo Parts USA

USA . 974 parts In-Stock

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TANS Electronics

Latvia . 200 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Overview

Unlock unparalleled protection with the 1N6290AG transient suppression device by Onsemi. Designed to safeguard your electronics from voltage spikes and surges, this high-quality product offers peace of mind and reliability. With a maximum power dissipation of 1500 W and a nominal breakdown voltage of 62 V, this Zener diode technology ensures optimal performance in various applications. Trust Onsemi's expertise in manufacturing to deliver a superior product that prioritizes safety and durability. Invest in the 1N6290AG for unmatched quality and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Can handle high power surges effectively, offering reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 62 V

Offers precise voltage protection at the specified level, ensuring consistent performance.

Package Shape: ROUND

Allows for easy installation and placement in various electronic devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Operates efficiently even in extremely low temperatures, enhancing its versatility.

Peak Reflow Temperature °C: 260

Can undergo reflow soldering processes without any issues, facilitating assembly in manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, delivering optimal protection against voltage spikes.

Technology: ZENER

Utilizes Zener diode technology for efficient voltage regulation and protection.

Maximum Repetitive Peak Reverse Voltage: 53 V

Offers consistent protection against reverse voltage spikes within the specified range.

Technical Specifications

Transient Suppression Devices 1N6290AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

65.1 V

Minimum Breakdown Voltage:

58.9 V

Nominal Breakdown Voltage:

62 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

85 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

53 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6290AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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