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1N6268ARL4

Onsemi

1N6268ARL4 by Onsemi

1N6268ARL4 by Onsemi is a Zener diode with 7.5V breakdown voltage and 1500W max non-repetitive peak reverse power dissipation. It is a unidirectional transient suppression device used for clamping voltages up to 11.3V in applications requiring protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 9,894 parts In-Stock

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Digiode

USA . 1,113 parts In-Stock

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Vyrian

USA . 848 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 293 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 362 parts In-Stock

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$16.592

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Problanco Electronics

Mexico . 8,031 parts In-Stock

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Kulean Microsystems

USA . 6,555 parts In-Stock

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SupplyDigital Components

Austria . 2,957 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 2,472 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,937 parts In-Stock

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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Corohmni

South Africa . 360 parts In-Stock

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Overview

Discover the ultimate protection for your electronic devices with the 1N6268ARL4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This Transient Suppression Device is designed to safeguard your valuable equipment from voltage spikes and surges, ensuring uninterrupted performance. With its high power dissipation and superior breakdown voltage, this product offers peace of mind and long-lasting protection. Trust Onsemi for all your transient suppression needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation capability allows the device to handle large transient currents and protect the connected circuits effectively.

Nominal Breakdown Voltage: 7.5 V

The specific breakdown voltage ensures that the device activates at the right voltage levels to provide reliable protection to the circuit.

Package Shape: ROUND

The round shape of the package enhances the overall aesthetics of the device and makes it easy to install in different configurations.

Reference Standard: UL RECOGNIZED

Being UL recognized indicates that the product has met safety and quality standards, giving users confidence in its performance and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode technology ensures efficient suppression of transient voltage spikes, safeguarding the circuit from damage.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts current in one direction, providing effective protection against transient voltage spikes in a specific direction.

Diode Element Material: SILICON

The use of silicon as the diode element material offers high performance and durability, making the device suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices 1N6268ARL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.5 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

11.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6268ARL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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