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1N6281AG

Onsemi

1N6281AG by Onsemi

1N6281AG by Onsemi is a Zener diode with a breakdown voltage of 27V, max clamping voltage of 37.5V, and power dissipation of 1500W. It is used in transient suppression applications to protect circuits from voltage spikes.

Median Price

$0.512

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 345 parts In-Stock

1+ parts

$0.139

100+ parts

-

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345

$0.139

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Element14

Singapore . 345 parts In-Stock

1+ parts

$0.747

100+ parts

$0.499

1k+ parts

$0.433

10k+ parts

$0.371

345

$0.747

$0.499

$0.433

$0.371

Rochester

USA . 373 parts In-Stock

1+ parts

-

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$0.277

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$0.230

10k+ parts

$0.205

373

-

$0.277

$0.230

$0.205

DigiKey

USA . 373 parts In-Stock

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$0.800

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373

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$0.800

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Distributors (In-Stock)

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Digiode

USA . 772 parts In-Stock

1+ parts

$0.217

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772

$0.217

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Nova Conductors

Japan . 87 parts In-Stock

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$0.426

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87

$0.426

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VNN

France . 31,831 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 1,800 parts In-Stock

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1,800

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Ashlea Components Ltd

UK . 1,054 parts In-Stock

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1,054

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LIBRA Elektronik GmbH

Germany . 264 parts In-Stock

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Classic Components Corporation

USA . 138 parts In-Stock

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Vyrian

USA . 90 parts In-Stock

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90

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Distributors (Availability)

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Continental Prestige Electronics

USA . 345 parts In-Stock

1+ parts

$0.139

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345

$0.139

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Ampacity Inc.

Singapore . 79 parts In-Stock

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$0.194

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79

$0.194

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Corphita

USA . 753 parts In-Stock

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$0.205

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753

$0.205

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Corohmni

South Africa . 382 parts In-Stock

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$0.228

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382

$0.228

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Component Stockers USA

USA . 1,464 parts In-Stock

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$0.230

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$0.220

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$0.200

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1,464

$0.230

$0.220

$0.200

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.426

100+ parts

-

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$0.405

10k+ parts

$0.396

2,000

$0.426

-

$0.405

$0.396

AZTECH Wire

Italy . 344 parts In-Stock

1+ parts

$10.455

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344

$10.455

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Perfect Parts

USA . 7,840 parts In-Stock

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7,840

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TANS Electronics

Latvia . 3,770 parts In-Stock

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3,770

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Cyclops Electronics Ltd (Excess)

UK . 3,500 parts In-Stock

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3,500

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Problanco Electronics

Mexico . 3,332 parts In-Stock

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SupplyDigital Components

Austria . 3,186 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

USA . 252 parts In-Stock

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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Overview

Discover the power of Onsemi's 1N6281AG Transient Suppression Device, designed to provide superior protection against voltage spikes and surges. With a maximum non-repetitive peak reverse power dissipation of 1500W and a nominal breakdown voltage of 27V, this product ensures reliable performance in various applications. Whether you're safeguarding sensitive electronics or industrial equipment, this high-quality device offers peace of mind with its advanced zener technology and UL recognition. Upgrade your protection with Onsemi's 1N6281AG today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for the package body, ensuring long-lasting performance of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability, making it suitable for handling surge currents and protecting connected devices.

Nominal Breakdown Voltage: 27 V

Provides effective suppression of voltage spikes above 27V, safeguarding connected equipment from damage.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the device to function effectively in various environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed diode type for transient suppression, providing superior protection against voltage spikes.

Technical Specifications

Transient Suppression Devices 1N6281AG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

37.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

23.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6281AG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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