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1N6297ARL4

Onsemi

1N6297ARL4 by Onsemi

1N6297ARL4 by Onsemi is a Zener diode with a breakdown voltage of 120V, max power dissipation of 5W, and clamping voltage of 165V. It is used for transient suppression in electronic circuits to protect against voltage spikes and surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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VNN

France . 3,930 parts In-Stock

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Sensible Micro Corp

USA . 1,378 parts In-Stock

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EMSNET

USA . 1,378 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Digiode

USA . 362 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 745 parts In-Stock

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$2.010

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745

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AZTECH Wire

Italy . 268 parts In-Stock

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Problanco Electronics

Mexico . 5,401 parts In-Stock

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Kulean Microsystems

USA . 3,106 parts In-Stock

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SupplyDigital Components

Austria . 2,434 parts In-Stock

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Corphita

USA . 1,689 parts In-Stock

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UHIMA Technologies

Türkiye . 839 parts In-Stock

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TANS Electronics

Latvia . 191 parts In-Stock

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Corohmni

South Africa . 163 parts In-Stock

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Bastille Electronics

Australia . 161 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality 1N6297ARL4 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers reliable Transient Suppression Devices that provide superior protection against voltage spikes and surges. Whether you're looking to safeguard your sensitive equipment or ensure smooth operation of your systems, this product offers unmatched value and performance. Trust Onsemi for top-notch technology and innovative solutions. Elevate your applications with the 1N6297ARL4 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Offers high power dissipation capability, making it suitable for handling transient voltage spikes effectively.

Nominal Breakdown Voltage: 120 V

Ensures reliable protection by activating when the voltage exceeds the specified level, safeguarding connected devices.

Package Shape: ROUND

Compact and space-saving design for easy installation in various applications.

Maximum Power Dissipation: 5 W

Efficiently dissipates excess power to prevent damage to the device and connected equipment.

Minimum Breakdown Voltage: 114 V

Provides a safety margin before the breakdown voltage is reached, enhancing the protective function.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes diode technology for effective transient suppression, redirecting excess voltage away from sensitive components.

Technology: ZENER

Zener technology ensures precise voltage regulation and stability, enhancing the overall performance of the transient suppression device.

Maximum Clamping Voltage: 165 V

Limits the voltage spike to a safe level, preventing damage to downstream components in the circuit.

Diode Element Material: SILICON

Silicon diode material provides high efficiency and reliability for transient voltage suppression applications.

Technical Specifications

Transient Suppression Devices 1N6297ARL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

126 V

Minimum Breakdown Voltage:

114 V

Nominal Breakdown Voltage:

120 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

165 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

102 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6297ARL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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