Loading...

1N6297ARL4G

Onsemi

1N6297ARL4G by Onsemi

1N6297ARL4G by Onsemi is a Zener diode with a max power dissipation of 5W and a breakdown voltage of 120V. It is used for transient suppression in applications requiring unidirectional polarity protection, with a max clamping voltage of 165V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 4,459 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,459

-

-

-

-

Vyrian

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,479

-

-

-

-

Digiode

USA . 791 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

791

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 641 parts In-Stock

1+ parts

$3.010

100+ parts

-

1k+ parts

-

10k+ parts

-

641

$3.010

-

-

-

AZTECH Wire

Italy . 663 parts In-Stock

1+ parts

$5.134

100+ parts

-

1k+ parts

-

10k+ parts

-

663

$5.134

-

-

-

Problanco Electronics

Mexico . 5,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,550

-

-

-

-

SupplyDigital Components

Austria . 4,744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,744

-

-

-

-

TANS Electronics

Latvia . 4,742 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,742

-

-

-

-

Kulean Microsystems

USA . 3,825 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,825

-

-

-

-

Corphita

USA . 2,401 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,401

-

-

-

-

UHIMA Technologies

Türkiye . 335 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

335

-

-

-

-

Bastille Electronics

Australia . 158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

158

-

-

-

-

Corohmni

South Africa . 102 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

102

-

-

-

-

Overview

Enhance the performance and reliability of your electronic circuits with the 1N6297ARL4G transient suppression device from Onsemi. This high-quality product offers superior protection against voltage spikes, ensuring the safety of your valuable equipment. Ideal for a wide range of applications, this diode is perfect for use in power supplies, automotive systems, and industrial machinery. Trust Onsemi's expertise and experience in manufacturing top-notch components to bring added value and peace of mind to your projects. Upgrade to the 1N6297ARL4G today and safeguard your investments with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device, making it user-friendly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this device can effectively protect equipment from voltage spikes and surges.

Nominal Breakdown Voltage: 120 V

The nominal breakdown voltage ensures reliable protection against overvoltage conditions for sensitive electronics.

Package Shape: ROUND

The round shape of the package allows for easy integration into different systems and circuit designs.

No. of Terminals: 2

The two terminals provide a straightforward connection process, reducing installation time and effort.

Package Style (Meter): LONG FORM

The long form package style offers increased surface area for heat dissipation, improving the device's overall performance.

Terminal Finish: TIN

The tin terminal finish enhances the device's conductivity and corrosion resistance for long-term reliability.

Terminal Position: AXIAL

The axial terminal position ensures proper alignment and positioning within a circuit, optimizing performance.

Case Connection: ISOLATED

The isolated case connection prevents interference and improves the device's overall stability and safety.

Maximum Power Dissipation: 5 W

This device can handle up to 5W of power dissipation, ensuring effective protection without sacrificing performance.

Minimum Breakdown Voltage: 114 V

The minimum breakdown voltage ensures the device triggers when necessary to protect connected equipment.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C makes this device suitable for various soldering processes.

Maximum Breakdown Voltage: 126 V

The maximum breakdown voltage protects against higher voltage spikes, ensuring comprehensive surge protection.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this device meets safety and quality standards, making it a trusted choice for users.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type offers superior surge protection capabilities to safeguard equipment from voltage fluctuations.

Technology: ZENER

The Zener technology allows for precise voltage regulation and clamping, offering reliable protection for sensitive electronics.

Terminal Form: WIRE

The wire terminal form ensures secure and stable connections, enhancing the overall performance and longevity of the device.

Maximum Repetitive Peak Reverse Voltage: 102 V

With a maximum repetitive peak reverse voltage of 102V, this device provides continuous protection against reverse polarity issues.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures protection in one direction, making it suitable for specific applications requiring one-way voltage regulation.

Maximum Clamping Voltage: 165 V

The maximum clamping voltage of 165V effectively limits the voltage spike level, ensuring the connected equipment remains safe.

Diode Element Material: SILICON

The silicon diode element material offers high conductivity and efficiency, ensuring reliable performance and durability of the device.

Technical Specifications

Transient Suppression Devices 1N6297ARL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

126 V

Minimum Breakdown Voltage:

114 V

Nominal Breakdown Voltage:

120 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

165 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

102 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6297ARL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20