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1N6289ARL4G

Onsemi

1N6289ARL4G by Onsemi

1N6289ARL4G by Onsemi is a Zener diode with a breakdown voltage of 56V, max clamping voltage of 77V, and peak power dissipation of 1500W. It is used in transient suppression applications due to its unidirectional polarity and high breakdown voltage capabilities.

Median Price

$0.805

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

$0.220

100+ parts

$0.220

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$0.210

10k+ parts

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1,500

$0.220

$0.220

$0.210

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Chip1Stop

Japan . 2,998 parts In-Stock

1+ parts

$1.390

100+ parts

$0.498

1k+ parts

$0.362

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2,998

$1.390

$0.498

$0.362

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.560

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300

$0.560

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Digiode

USA . 2,325 parts In-Stock

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$1.320

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$1.320

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Flip Electronics

USA . 3,300 parts In-Stock

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Vyrian

USA . 2,925 parts In-Stock

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Sogenti Electronics

Canada . 1,500 parts In-Stock

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VNN

France . 1,350 parts In-Stock

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Classic Components Corporation

USA . 1,180 parts In-Stock

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Ashlea Components Ltd

UK . 1,100 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 426 parts In-Stock

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$0.538

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$0.538

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Ampacity Inc.

Singapore . 2,765 parts In-Stock

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$1.180

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$1.180

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Corphita

USA . 1,924 parts In-Stock

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$1.251

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Component Stockers USA

USA . 722 parts In-Stock

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$99.990

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$99.990

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Perfect Parts

USA . 11,084 parts In-Stock

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SupplyDigital Components

Austria . 8,190 parts In-Stock

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Problanco Electronics

Mexico . 7,764 parts In-Stock

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TANS Electronics

Latvia . 5,711 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,932 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.549

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$0.532

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$0.521

2,000

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$0.549

$0.532

$0.521

UHIMA Technologies

Türkiye . 679 parts In-Stock

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679

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Overview

Experience superior quality and performance with the 1N6289ARL4G transient suppression device from Onsemi. Designed with precision and reliability in mind, this product offers unparalleled protection against voltage surges, making it ideal for a wide range of applications. Whether you're looking to safeguard your electronics or ensure the stability of your power supply, this device delivers value, efficiency, and peace of mind. Trust Onsemi to provide top-notch solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, the device can effectively handle transient overvoltage events, providing protection to sensitive electronic components.

Nominal Breakdown Voltage: 56 V

The nominal breakdown voltage of 56V ensures that the device activates and clamps the voltage at a safe level during transient events, protecting connected equipment.

Maximum Operating Temperature: 175 °C

The high operating temperature range allows the device to function effectively in a wide range of environmental conditions, ensuring reliable performance.

Maximum Repetitive Peak Reverse Voltage: 47.8 V

Having a high repetitive peak reverse voltage rating means the device can provide continuous protection against transient voltage spikes without failing.

Technical Specifications

Transient Suppression Devices 1N6289ARL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

58.8 V

Minimum Breakdown Voltage:

53.2 V

Nominal Breakdown Voltage:

56 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

77 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

47.8 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6289ARL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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