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SSM6N815R,LF(T

Toshiba

SSM6N815R,LF(T by Toshiba

Toshiba SSM6N815R,LF(T is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 2A ID, and 0.142 ohm RDS(on). With 2 elements in SMALL OUTLINE package, it operates in ENHANCEMENT MODE up to 150°C.

Median Price

$0.220

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$0.154

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$0.143

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Verical

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Glotronic Ltd.

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Overview

Discover the power of Toshiba's SSM6N815R,LF(T Small Signal Field Effect Transistor! This high-quality component offers unmatched performance in switching applications, with a minimum DS breakdown voltage of 100V and a maximum drain current of 2A. With its innovative design featuring 2 separate elements and a built-in diode, this transistor provides reliable operation and efficient power dissipation. Whether you're a hobbyist or a professional, this transistor is sure to meet your needs with its compact package style and advanced metal-oxide semiconductor technology. Upgrade your projects today with Toshiba's SSM6N815R,LF(T!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making it a reliable choice.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds, making them suitable for high-frequency applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode allows for efficient switching and current flow control, enhancing performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption.

Surface Mount: YES

The surface-mount design allows for easy installation and space-saving benefits in compact electronic devices.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this transistor can handle higher voltages, ensuring reliable operation in various circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact footprint, making it ideal for space-constrained applications.

Terminal Form: FLAT

The flat terminal form allows for easy soldering and secure connections, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode offers better control over the transistor’s characteristics and allows for precise voltage regulation.

No. of Elements: 2

With two elements, this transistor can handle more complex circuit configurations, offering versatility in circuit design.

No. of Terminals: 6

The six terminals provide multiple connection points, allowing for flexibility in circuit layout and design.

Maximum Power Dissipation (Abs): 1.4 W

With a maximum power dissipation of 1.4W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact design, suitable for applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and efficiency, making this transistor a durable choice.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand higher temperatures, ensuring reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making this transistor a durable choice for various applications.

Maximum Drain Current (ID): 2 A

With a maximum drain current of 2A, this transistor can handle higher currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.142 ohm

The low drain-source on resistance of 0.142 ohms minimizes power loss and enhances efficiency in circuit operation.

Terminal Position: DUAL

The dual terminal position allows for easy connectivity and flexibility in circuit design, making it a versatile choice for various applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder joints.

Maximum Feedback Capacitance (Crss): 16 pF

The low feedback capacitance of 16 pF minimizes the risk of signal distortion, ensuring high-quality performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SSM6N815R,LF(T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.142 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

16 pF

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SSM6N815R,LF(T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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