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SSM6N35AFE,LF(B

Toshiba

SSM6N35AFE,LF(B by Toshiba

Toshiba SSM6N35AFE,LF(B is a N-CHANNEL FET for SWITCHING applications. Features 2 ELEMENTS with BUILT-IN DIODE and RESISTOR. Offers 20V DS Breakdown Voltage, 0.25A ID, and 2.4Ω RDS(on).

Median Price

$0.187

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Verical

USA . 2,673 parts In-Stock

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Nova Conductors

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ACDS - Activité Composants Distribution Service

France . 3,860 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 3,503 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 191 parts In-Stock

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Continental Prestige Electronics

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CoreStaff

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Overview

Enhance your electronic designs with the high-quality SSM6N35AFE,LF(B Small Signal Field Effect Transistor by Toshiba. With a reputation for reliability and innovation, Toshiba delivers top-notch components for a wide range of applications. This N-CHANNEL transistor is perfect for switching operations, featuring a compact package with built-in diode and resistor. Experience seamless performance and efficiency with Toshiba's cutting-edge technology, providing value and benefits to customers seeking superior electronic solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high conductivity and efficiency, making them ideal for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design and allows for greater flexibility in use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability enables easy integration into modern circuit designs and saves space on circuit boards.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltages and provide added protection.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient utilization of board space and easy mounting in compact designs.

Terminal Form: FLAT

The flat terminal form ensures secure connections and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conductivity, enabling efficient switching.

No. of Elements: 2

With two elements, this transistor provides added functionality and versatility in circuit design.

No. of Terminals: 6

Six terminals offer multiple connection points for increased flexibility in circuit layout and design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology ensures high performance, low power consumption, and reliability.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency in transistor applications.

Maximum Drain Current (ID): 0.25 A

This maximum drain current rating of 0.25 A allows the transistor to handle higher current loads with ease.

Maximum Drain-Source On Resistance: 2.4 ohm

The low on-resistance of 2.4 ohms reduces power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal configuration provides additional connection options for versatile circuit design and implementation.

Maximum Feedback Capacitance (Crss): 10 pF

The maximum feedback capacitance of 10 pF minimizes feedback effects and ensures stable transistor operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) SSM6N35AFE,LF(B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

2.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SSM6N35AFE,LF(B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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