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2SK302

Toshiba

2SK302 by Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Feedback Capacitance (Crss): .05 pF; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10

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GES GmbH

Germany . 4 parts In-Stock

1+ parts

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1k+ parts

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10k+ parts

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 555 parts In-Stock

1+ parts

$0.788

100+ parts

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1k+ parts

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10k+ parts

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555

$0.788

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Northwest PG Solutions

USA . 747 parts In-Stock

1+ parts

$0.867

100+ parts

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1k+ parts

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10k+ parts

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747

$0.867

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Kepictronics

USA . 600 parts In-Stock

1+ parts

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600

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK302 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK302 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-601-4759, 5961016014759

NIIN

016014759

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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