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2N5486ZL1

Onsemi

2N5486ZL1 by Onsemi

2N5486ZL1 by Onsemi is an N-CHANNEL RF FET with a power gain of 10 dB, ideal for amplifier applications in the UHF band. Operating in depletion mode, it has a max drain current of 0.03 A and feedback capacitance of 1 pF, housed in a cylindrical package with through-hole terminals.

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1k+

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Vyrian

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Digiode

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Native Components

USA . 5 parts In-Stock

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Northwest PG Solutions

USA . 530 parts In-Stock

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Problanco Electronics

Mexico . 7,556 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 6,304 parts In-Stock

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Kulean Microsystems

USA . 5,639 parts In-Stock

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Corphita

USA . 428 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Enhance your amplifier performance with the 2N5486ZL1 by Onsemi, a top-quality RF Small Signal Field Effect Transistor (FET) designed for ultra-high frequency applications. Manufactured by Onsemi, a trusted industry leader, this N-CHANNEL transistor offers a minimum power gain of 10dB and operates in depletion mode for optimal efficiency. With its durable plastic/epoxy body and through-hole terminals, this transistor guarantees reliable performance and easy installation. Upgrade your amplifier today with the 2N5486ZL1 and experience superior signal amplification like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer better performance and lower resistance compared to P-channel transistors, making them ideal for many applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Minimum Power Gain (Gp): 10 dB

High minimum power gain ensures strong signal amplification capabilities, making it suitable for applications requiring high gain.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making installation and circuit assembly straightforward.

Operating Mode: DEPLETION MODE

Depletion mode operation offers precise control over the transistor's behavior, allowing for stable and reliable performance in various conditions.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ensuring compatibility with a wide range of high-frequency systems and devices.

No. of Terminals: 3

Three terminals provide versatile connectivity options and enable the transistor to be easily integrated into different circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and space-saving design, making it suitable for small and tight spaces in electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high performance and efficiency, making it a reliable choice for demanding applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the transistor can withstand elevated temperatures without performance degradation, enhancing reliability in harsh environments.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, ensuring stable and consistent performance over time.

Maximum Drain Current (ID): 0.03 A

Maximum drain current rating of 0.03 A allows the transistor to handle moderate current loads, making it suitable for various applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connection in circuits, enhancing user convenience and installation efficiency.

Maximum Feedback Capacitance (Crss): 1 pF

Low feedback capacitance minimizes the risk of unwanted oscillations and instability, ensuring reliable and consistent performance in high-frequency applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5486ZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5486ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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