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2SK302-Y

Toshiba

2SK302-Y by Toshiba

Toshiba's 2SK302-Y is an N-CHANNEL RF FET with a built-in diode, ideal for amplifier applications. Operating in depletion mode, it offers a max drain current of 0.03A and very high frequency band performance. With a package style of small outline and GULL WING terminals, it can handle up to 125°C operating temperature.

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Overview

Unlock the power of cutting-edge technology with the Toshiba 2SK302-Y RF Small Signal Field Effect Transistor (FET)! Crafted with precision and expertise by Toshiba, this N-CHANNEL transistor offers superior performance in amplifier applications. With a maximum operating temperature of 125°C and very high frequency band capabilities, the 2SK302-Y guarantees top-notch quality and reliability. Its small outline package style and gull wing terminals make installation a breeze. Transform your projects with the unmatched value and benefits that Toshiba's 2SK302-Y brings to the table. Elevate your designs to the next level with this powerhouse transistor today!

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good durability and protection for the transistor.

Polarity or Channel Type : N-CHANNEL

N-channel transistors typically have higher mobility and conductivity compared to P-channel transistors, making them a good choice for amplifier applications.

Configuration : SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the transistor from reverse polarity and voltage spikes, increasing its reliability.

Transistor Application : AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification and processing.

Surface Mount : YES

The surface mount feature makes it easy to integrate this transistor into compact electronic devices and circuit boards.

Minimum DS Breakdown Voltage : 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltage levels without getting damaged.

Field Effect Transistor Technology : METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, making this transistor energy-efficient and reliable.

Maximum Operating Temperature : 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperature environments without experiencing performance issues.

Maximum Drain Current (ID) : 0.03 A

This transistor can handle a maximum drain current of 0.03A, making it suitable for low-power amplifier circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK302-Y attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.05 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK302-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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