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XOPA810IDCKT

Texas Instruments

XOPA810IDCKT by Texas Instruments

XOPA810IDCKT by Texas Instruments is a BICMOS operational amplifier with 500uV max input offset voltage, 100dB nominal CMRR, and 70000kHz unity gain bandwidth. Ideal for automotive applications due to its low bias current, wideband capability, and compact thin profile package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,975 parts In-Stock

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Vyrian

USA . 2,130 parts In-Stock

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2,130

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Nova Conductors

Japan . 72 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,006 parts In-Stock

1+ parts

$2.655

100+ parts

-

1k+ parts

$3.144

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1,006

$2.655

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$3.144

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ChromeModa Solutions

Germany . 5,916 parts In-Stock

1+ parts

$2.983

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$2.446

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5,916

$2.983

$2.446

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IDEA Electronic Components Group

UK . 309 parts In-Stock

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$2.983

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$2.685

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309

$2.983

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$2.685

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Corohmni

South Africa . 57 parts In-Stock

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$7.277

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57

$7.277

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Ampacity Inc.

Singapore . 421 parts In-Stock

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$8.410

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421

$8.410

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Semicontronic

India . 1,446 parts In-Stock

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$9.410

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$9.175

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$9.128

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1,446

$9.410

$9.175

$9.128

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One Stop Electronics

USA . 1,011 parts In-Stock

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$9.410

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$9.410

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AZTECH Wire

Italy . 661 parts In-Stock

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$16.227

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Continental Prestige Electronics

USA . 4,730 parts In-Stock

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Corphita

USA . 4,697 parts In-Stock

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Argo Parts USA

USA . 3,914 parts In-Stock

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DigiPath Technology Company

USA . 2,026 parts In-Stock

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$2.689

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$2.689

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Unleash the power of precision with the Texas Instruments XOPA810IDCKT Operational Amplifier. Manufactured with top-notch quality by Texas Instruments, this Op Amp is designed to deliver unparalleled performance and reliability in a compact package. Ideal for a wide range of applications, this amplifier boasts a low-bias design, ensuring accurate signal amplification with minimal distortion. Experience enhanced signal processing capabilities and optimal efficiency with the XOPA810IDCKT, setting new standards in operational amplifier technology. Elevate your projects to the next level with this innovative solution from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 500 uV

Low input offset voltage helps in minimizing errors in signal processing applications, resulting in accurate output.

Maximum Average Bias Current (IIB): 0.00002 uA

Low bias current ensures minimal power consumption and stable performance over time.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving valuable production time.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference from the signal, leading to cleaner output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with a wide range of applications.

Frequency Compensation: YES

Frequency compensation ensures stability and reliable performance across different operating conditions.

Technology: BICMOS

Utilizes BiCMOS technology for a good balance of high-speed operation and low power consumption, making it suitable for various applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides precise control over gain and bandwidth, offering flexibility in signal processing.

Wideband: YES

Wideband operation allows for high-frequency signal processing, making it suitable for applications requiring fast response times.

Technical Specifications

Operational Amplifiers (Op Amps) XOPA810IDCKT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

70 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

500 uV

Minimum Voltage Gain:

251188

Nominal Slew Rate:

200 V/us

Maximum Input Offset Current (IIO):

20 pA

Peak Bias Current:

20 pA

Maximum Bias Current (IIB) @25 °C:

20 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

14 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

4.6 mA

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.049 in (1.25 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

5

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP5/6,.08

Trade Compliance

XOPA810IDCKT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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