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XOPA1637DGKR

Texas Instruments

XOPA1637DGKR by Texas Instruments

XOPA1637DGKR by Texas Instruments is an Operational Amplifier with 250uV Max Input Offset Voltage, 140dB Nominal CMRR, and 9200kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,027 parts In-Stock

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Digiode

USA . 532 parts In-Stock

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532

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Nova Conductors

Japan . 200 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 560 parts In-Stock

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$3.410

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560

$3.410

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Parana Technologies

USA . 1,524 parts In-Stock

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$4.794

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$445.236

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$4.315

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DigiPath Technology Company

USA . 2,288 parts In-Stock

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$5.279

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$4.857

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IDEA Electronic Components Group

UK . 2,177 parts In-Stock

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$5.387

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$4.848

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$5.387

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ChromeModa Solutions

Germany . 1,449 parts In-Stock

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$5.387

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$4.417

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$5.387

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Corohmni

South Africa . 1,025 parts In-Stock

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$7.281

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One Stop Electronics

USA . 794 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 442 parts In-Stock

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$19.222

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Corphita

USA . 3,891 parts In-Stock

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Argo Parts USA

USA . 3,772 parts In-Stock

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Continental Prestige Electronics

USA . 1,808 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unleash the power of precision with the XOPA1637DGKR by Texas Instruments, a top-tier operational amplifier that sets the bar high for quality and performance. Crafted with cutting-edge technology and expertise from a renowned manufacturer, this op amp offers unparalleled reliability and accuracy for a wide range of applications. Experience seamless integration, exceptional value, and unmatched advantages that cater to all your needs. Elevate your projects with the XOPA1637DGKR and discover a world of possibilities like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Maximum Input Offset Voltage: 250 uV

Allows for precision in signal amplification with minimal distortion.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently with a low supply voltage, making it suitable for battery-powered applications.

Surface Mount: YES

Facilitates easy integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 140 dB

Ensures effective rejection of common-mode noise for cleaner output signals.

Nominal Unity Gain Bandwidth: 9200 kHz

Provides high bandwidth for fast signal processing and amplification.

Technical Specifications

Operational Amplifiers (Op Amps) XOPA1637DGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Total Functions:

1

Frequency Compensation:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

9.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

140 dB

Minimum Common Mode Rejection Ratio (CMRR ):

126 dB

Input Offset Voltage Limit:

250 uV

Minimum Voltage Gain:

562341.325

Nominal Slew Rate:

15 V/us

Maximum Input Offset Current (IIO):

1 nA

Peak Bias Current:

4 nA

Maximum Bias Current (IIB) @25 °C:

2 nA

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

20 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.6 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.20

Trade Compliance

XOPA1637DGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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