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XOPA392DBVR

Texas Instruments

XOPA392DBVR by Texas Instruments

XOPA392DBVR by Texas Instruments is a CMOS Operational Amplifier with low-offset and low-bias features. It has a max input offset voltage of 10 uV, nominal unity gain bandwidth of 13 MHz, and operates in automotive temperature grade applications.

Median Price

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3

In-Stock Inventory

1k+

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Vyrian

USA . 5,852 parts In-Stock

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Digiode

USA . 4,749 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 1,193 parts In-Stock

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$1.410

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$1.410

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Semicontronic

India . 230 parts In-Stock

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$2.410

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$2.350

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$2.338

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$2.410

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$5.425

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$5.154

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Corohmni

South Africa . 338 parts In-Stock

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Parana Technologies

USA . 877 parts In-Stock

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$6.202

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$6.966

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One Stop Electronics

USA . 1,591 parts In-Stock

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DigiPath Technology Company

USA . 996 parts In-Stock

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ChromeModa Solutions

Germany . 5,717 parts In-Stock

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IDEA Electronic Components Group

UK . 1,097 parts In-Stock

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AZTECH Wire

Italy . 868 parts In-Stock

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Continental Prestige Electronics

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Robosynatics

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Lucentia Tech

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Argo Parts USA

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Bastille Electronics

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Overview

Experience unparalleled performance and precision with the XOPA392DBVR operational amplifier by Texas Instruments. Known for their top-quality products, Texas Instruments delivers a compact and reliable solution that exceeds expectations in various applications. This small outline, low profile op amp offers low-offset, low-bias features, making it ideal for automotive use. With a wide temperature range and high common mode rejection ratio, this amplifier ensures optimal performance even in challenging environments. Upgrade your designs with the XOPA392DBVR and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection of internal components.

Maximum Input Offset Voltage: 10 uV

Low input offset voltage ensures accurate and precise output signals.

Maximum Average Bias Current (IIB): 0.0000008 uA

Low bias current minimizes power consumption and improves operational efficiency.

Surface Mount: YES

Easy and convenient installation on circuit boards for space-saving design.

Nominal Common Mode Reject Ratio: 120 dB

High common mode rejection ratio provides enhanced noise immunity.

Maximum Input Offset Current (IIO): 0.0000008 uA

Low input offset current ensures minimal error in signal amplification.

Maximum Supply Voltage Limit: 3 V

Safe operating voltage range for reliable performance and protection of internal components.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for operation in harsh environments.

Frequency Compensation: YES

Stable frequency response for accurate signal amplification.

Minimum Voltage Gain: 199526.2315

High voltage gain capability for amplification of weak signals.

Minimum Operating Temperature: -40 °C

Wide temperature range for operation in extreme cold conditions.

Low-Bias: YES

Low bias current ensures efficient power usage and minimal signal distortion.

Nominal Unity Gain Bandwidth: 13000 kHz

High unity gain bandwidth for wide bandwidth signal processing.

Minimum Common Mode Reject Ratio: 75 dB

Good common mode rejection ratio for minimizing noise interference in signals.

Technology: CMOS

CMOS technology offers low power consumption and high integration capability.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for signal amplification and processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) XOPA392DBVR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

13 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

10 uV

Minimum Voltage Gain:

199526.2315

Nominal Slew Rate:

4.8 V/us

Maximum Input Offset Current (IIO):

0.8 pA

Peak Bias Current:

0.8 pA

Maximum Bias Current (IIB) @25 °C:

0.8 pA

Operational Characteristics

Maximum Supply Voltage:

3 V

Minimum Negative Supply Voltage:

-3 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

XOPA392DBVR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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