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XOPA810IDT

Texas Instruments

XOPA810IDT by Texas Instruments

XOPA810IDT by Texas Instruments is an Operational Amplifier with a max input offset voltage of 500uV, 100dB nominal common mode reject ratio, and 70,000 kHz nominal unity gain bandwidth. Ideal for automotive applications due to its small outline package style and wide temperature range from -40°C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,197 parts In-Stock

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Digiode

USA . 3,070 parts In-Stock

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3,070

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 233 parts In-Stock

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$4.320

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233

$4.320

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Ampacity Inc.

Singapore . 788 parts In-Stock

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$5.410

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788

$5.410

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Parana Technologies

USA . 1,950 parts In-Stock

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$5.512

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$6.260

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$5.512

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AZTECH Wire

Italy . 361 parts In-Stock

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$5.913

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$5.913

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DigiPath Technology Company

USA . 519 parts In-Stock

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$6.069

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519

$6.069

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ChromeModa Solutions

Germany . 6,979 parts In-Stock

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$6.193

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$5.078

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IDEA Electronic Components Group

UK . 283 parts In-Stock

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$6.193

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$5.574

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One Stop Electronics

USA . 1,440 parts In-Stock

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$8.410

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Semicontronic

India . 343 parts In-Stock

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$9.410

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$9.175

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$9.128

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343

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Argo Parts USA

USA . 4,958 parts In-Stock

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Corphita

USA . 3,406 parts In-Stock

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Continental Prestige Electronics

USA . 2,769 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Overview

Unleash the power of precision with the XOPA810IDT operational amplifier by Texas Instruments. Crafted with top-notch quality and reliability, this amplifier offers unparalleled performance in a variety of applications. From automotive to industrial settings, this amplifier delivers exceptional value and benefits to customers seeking high-quality solutions. Elevate your projects with the XOPA810IDT and experience seamless operation and unmatched efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and reliable material ensures longevity and robustness of the product.

Maximum Input Offset Voltage: 500 uV

Low input offset voltage ensures high accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 0.00002 uA

This extremely low bias current minimizes errors and distortion in signal amplification.

Surface Mount: YES

Ease of installation and space-saving design for efficient PCB layout.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio ensures minimal interference from external noise.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a nominal supply voltage, suitable for various applications.

Maximum Supply Voltage Limit: 14 V

Wide supply voltage range allows flexibility in power source selection.

Maximum Operating Temperature: 125 °C

High operating temperature range suitable for industrial and automotive applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture enhances stability and performance in signal processing tasks.

Nominal Slow Rate: 200 V/us

Fast slew rate enables rapid response to input signal changes.

Technical Specifications

Operational Amplifiers (Op Amps) XOPA810IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

70 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

500 uV

Nominal Slew Rate:

200 V/us

Peak Bias Current:

20 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

14 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.91 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

XOPA810IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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