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XOPA607IDBVT

Texas Instruments

XOPA607IDBVT by Texas Instruments

XOPA607IDBVT by Texas Instruments is a CMOS Operational Amplifier with low-offset and low-bias features. It offers a max input offset voltage of 600 uV, nominal unity gain bandwidth of 50 MHz, and a min voltage gain of 1M. Ideal for automotive applications due to its small outline package style and wide temperature range from -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,996 parts In-Stock

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Digiode

USA . 767 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Corohmni

South Africa . 737 parts In-Stock

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$1.899

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737

$1.899

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Parana Technologies

USA . 956 parts In-Stock

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$3.773

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$4.267

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DigiPath Technology Company

USA . 2,165 parts In-Stock

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$4.154

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$3.822

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ChromeModa Solutions

Germany . 5,951 parts In-Stock

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$4.239

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$3.476

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IDEA Electronic Components Group

UK . 1,870 parts In-Stock

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$4.239

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$3.815

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Ampacity Inc.

Singapore . 1,148 parts In-Stock

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$4.410

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Semicontronic

India . 370 parts In-Stock

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$9.410

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$9.175

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$9.128

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One Stop Electronics

USA . 309 parts In-Stock

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$9.410

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AZTECH Wire

Italy . 769 parts In-Stock

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Corphita

USA . 4,198 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your electronic designs with the XOPA607IDBVT by Texas Instruments. As a leading manufacturer in operational amplifiers, Texas Instruments delivers top-quality products like this one that promise high performance and reliability. Perfect for applications in automotive and industrial settings, this operational amplifier offers low bias and offset, ensuring precision in your circuits. Experience seamless integration and superior functionality with the XOPA607IDBVT, setting a new standard in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 600 uV

Low input offset voltage ensures accurate amplification of input signals with minimal error.

Surface Mount: YES

Surface mount capability simplifies PCB assembly process and saves space on the board.

Nominal Common Mode Reject Ratio: 100 dB

High common mode rejection ratio allows the amplifier to reject unwanted noise and interference from the input signal.

Frequency Compensation: YES (AVCL>=6)

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the amplifier suitable for battery-powered applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in a wide range of linear and non-linear applications.

Technical Specifications

Operational Amplifiers (Op Amps) XOPA607IDBVT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

YES (AVCL>=6)

Low-Bias:

Yes

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

50 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

100 dB

Minimum Common Mode Rejection Ratio (CMRR ):

94 dB

Input Offset Voltage Limit:

600 uV

Minimum Voltage Gain:

1000000

Nominal Slew Rate:

24 V/us

Maximum Input Offset Current (IIO):

20 pA

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

20 pA

Operational Characteristics

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

XOPA607IDBVT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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