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TPIC44L03DB

Texas Instruments

TPIC44L03DB by Texas Instruments

TPIC44L03DB by Texas Instruments is a MOSFET Gate Driver with 24 terminals, operating voltage range of 4.5V to 24V, and turn-on/off time of 4us/3.5us. It is designed for automotive applications due to its small outline package style and dual terminal position, suitable for driving MOSFETs in various systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,086 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,086

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Digiode

USA . 966 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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966

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,570 parts In-Stock

1+ parts

$9.576

100+ parts

-

1k+ parts

$10.172

10k+ parts

-

1,570

$9.576

-

$10.172

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DigiPath Technology Company

USA . 700 parts In-Stock

1+ parts

$10.544

100+ parts

$9.700

1k+ parts

-

10k+ parts

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700

$10.544

$9.700

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ChromeModa Solutions

Germany . 5,879 parts In-Stock

1+ parts

$10.759

100+ parts

$8.822

1k+ parts

-

10k+ parts

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5,879

$10.759

$8.822

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IDEA Electronic Components Group

UK . 326 parts In-Stock

1+ parts

$10.759

100+ parts

$10.221

1k+ parts

$9.683

10k+ parts

-

326

$10.759

$10.221

$9.683

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AZTECH Wire

Italy . 848 parts In-Stock

1+ parts

$19.285

100+ parts

-

1k+ parts

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10k+ parts

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848

$19.285

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One Stop Electronics

USA . 1,544 parts In-Stock

1+ parts

$33.500

100+ parts

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1k+ parts

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10k+ parts

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1,544

$33.500

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Corphita

USA . 2,750 parts In-Stock

1+ parts

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2,750

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Overview

Experience unparalleled quality and reliability with the TPIC44L03DB MOSFET Gate Driver by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge solutions for a wide range of applications. This compact driver offers exceptional performance, efficiency, and precision control, making it an ideal choice for automotive and industrial applications. Trust Texas Instruments to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the MOSFET gate driver.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and space in the overall design.

Maximum Supply Voltage: 5.5 V

The maximum supply voltage of 5.5 V ensures safe operation within specified limits, preventing damage to the gate driver.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard PCB layouts and facilitates easy integration into existing designs.

Maximum Supply Voltage-1: 24 V

With a maximum supply voltage of 24 V, this MOSFET gate driver can handle higher voltage requirements for diverse applications.

Power Supplies (V): 5

Having a power supply of 5 V ensures compatibility with common voltage sources, making integration into various systems straightforward.

No. of Terminals: 24

The presence of 24 terminals allows for versatile connectivity options and ensures compatibility with a wide range of circuit configurations.

Package Style (Meter): SMALL OUTLINE, SHRINK PITCH

The small outline and shrink pitch package style saves valuable board space, ideal for compact designs where size constraints are a concern.

Minimum Supply Voltage-1: 8 V

Having a minimum supply voltage of 8 V ensures reliable operation even under low voltage conditions, enhancing the versatility of the gate driver.

Minimum Supply Voltage: 4.5 V

The minimum supply voltage of 4.5 V provides flexibility in power input requirements, allowing the gate driver to operate efficiently at lower voltages.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliability and stability in demanding environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the gate driver to function effectively in cold conditions without compromising performance.

Terminal Finish: NICKEL PALLADIUM

The nickel palladium terminal finish provides excellent corrosion resistance and solderability, ensuring long-term reliability and ease of assembly.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting orientations and easy connection to external circuitry, enhancing the usability of the gate driver.

Maximum Seated Height: 2 mm

The maximum seated height of 2 mm contributes to a compact profile, making this gate driver suitable for space-constrained applications.

Width: 5.3 mm

The narrow width of 5.3 mm enables the gate driver to fit seamlessly into tight layouts, expanding design possibilities in constrained spaces.

Length: 8.2 mm

With a length of 8.2 mm, this gate driver offers a balanced form factor that strikes a harmony between compactness and functionality.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade certification ensures the gate driver meets stringent reliability standards for automotive applications, making it a dependable choice for vehicle electronics.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering processes and enhances mechanical robustness, ensuring secure connections and long-term performance.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5 V provides a stable power source for the gate driver, enabling consistent and reliable operation in various setups.

Turn-on Time: 4 us

The fast turn-on time of 4 microseconds ensures quick response and precise control of the MOSFET switching, enhancing overall system efficiency and performance.

Terminal Pitch: 0.65 mm

With a terminal pitch of 0.65 mm, this gate driver offers high density and efficient connectivity options for intricate circuit layouts.

Nominal Supply Voltage-1: 12 V

The nominal supply voltage of 12 V provides a suitable power range for various applications, offering versatility and compatibility in different setups.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The interface IC type of buffer or inverter based MOSFET driver ensures smooth and reliable control of MOSFET switches, enhancing system performance and stability.

Turn-off Time: 3.5 us

The quick turn-off time of 3.5 microseconds facilitates rapid switching transitions and precise timing control, minimizing power losses and improving efficiency.

Technical Specifications

MOSFET Gate Drivers TPIC44L03DB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP28,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

8 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Turn-off Time:

3.5 us

Turn-on Time:

4 us

Width:

5.3 mm

Trade Compliance

TPIC44L03DB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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