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TPIC44L01DBRG4

Texas Instruments

TPIC44L01DBRG4 by Texas Instruments

TPIC44L01DBRG4 by Texas Instruments is a MOSFET Gate Driver with 24 terminals, operating voltage range of 4.5V to 24V, and turn-on time of 4us. Ideal for automotive applications due to its small outline package style and dual terminal position.

Median Price

$1.280

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 83 parts In-Stock

1+ parts

-

100+ parts

$1.280

1k+ parts

$1.150

10k+ parts

$1.080

83

-

$1.280

$1.150

$1.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,200 parts In-Stock

1+ parts

$1.064

100+ parts

-

1k+ parts

-

10k+ parts

-

2,200

$1.064

-

-

-

Vyrian

USA . 6,949 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,949

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,809 parts In-Stock

1+ parts

$1.008

100+ parts

-

1k+ parts

-

10k+ parts

-

1,809

$1.008

-

-

-

Parana Technologies

USA . 1,576 parts In-Stock

1+ parts

$6.870

100+ parts

-

1k+ parts

$7.489

10k+ parts

-

1,576

$6.870

-

$7.489

-

DigiPath Technology Company

USA . 53 parts In-Stock

1+ parts

$7.565

100+ parts

-

1k+ parts

-

10k+ parts

-

53

$7.565

-

-

-

ChromeModa Solutions

Germany . 4,112 parts In-Stock

1+ parts

$7.719

100+ parts

$6.330

1k+ parts

-

10k+ parts

-

4,112

$7.719

$6.330

-

-

IDEA Electronic Components Group

UK . 724 parts In-Stock

1+ parts

$7.719

100+ parts

-

1k+ parts

$6.947

10k+ parts

-

724

$7.719

-

$6.947

-

Microchip USA

USA . 454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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454

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-

Overview

Unlock the power of efficient and reliable MOSFET gate driving with the TPIC44L01DBRG4 by Texas Instruments. Built with superior quality and precision engineering, this small outline, shrink pitch package offers a wide range of applications in automotive systems and beyond. With a maximum supply voltage of 24V and fast turn-on/off times, this dual-terminal device provides exceptional value and performance for your projects. Trust Texas Instruments to deliver cutting-edge technology that meets your needs seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and ensures protection for the internal components of the MOSFET gate driver.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto PCBs, saving space and simplifying assembly processes.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this MOSFET gate driver is suitable for low-power applications and can operate within safe voltage limits.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, making it easier to fit into tight spaces on a PCB.

Maximum Supply Voltage-1: 24 V

Capable of handling a maximum supply voltage of 24V, this MOSFET gate driver can be used in a variety of applications requiring higher voltages.

Power Supplies (V): 5

Operating at 5V, this MOSFET gate driver is ideal for applications where low power consumption is a priority.

No. of Terminals: 24

Having 24 terminals allows for a greater level of control and connectivity options, making it versatile for different circuit configurations.

Package Style (Meter): SMALL OUTLINE, SHRINK PITCH

The small outline and shrink pitch package style offers a compact form factor, saving PCB space and enabling high-density designs.

Minimum Supply Voltage-1: 8 V

With a minimum supply voltage of 8V, this MOSFET gate driver can operate reliably even in applications where voltage fluctuations may occur.

Minimum Supply Voltage: 4.5 V

Being able to operate at a minimum voltage of 4.5V ensures compatibility with a wide range of power supply systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows this MOSFET gate driver to withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

Capable of operating at temperatures as low as -40°C, this MOSFET gate driver is suitable for use in both hot and cold climates.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures reliable electrical connections and corrosion resistance for long-term use.

Terminal Position: DUAL

Dual terminal positions provide flexibility in PCB mounting orientations, making installation easier and more adaptable.

Maximum Seated Height: 2 mm

With a low maximum seated height of 2mm, this MOSFET gate driver can fit into slim and compact designs without compromising performance.

Width: 5.3 mm

The narrow width of 5.3mm allows for efficient space utilization on the PCB, enabling dense packing and optimal layout.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, the MOSFET gate driver can withstand manufacturing processes without damage or degradation.

Peak Reflow Temperature °C: 260

Capable of withstanding a peak reflow temperature of 260°C, this MOSFET gate driver is suitable for lead-free soldering processes.

Length: 8.2 mm

The compact length of 8.2mm makes this MOSFET gate driver suitable for applications with space constraints.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive temperature standards, this MOSFET gate driver is reliable in automotive applications where temperature fluctuations are common.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and facilitates easy soldering during assembly.

Nominal Supply Voltage: 5 V

With a nominal supply voltage of 5V, this MOSFET gate driver ensures compatibility with standard power supplies and control systems.

Turn-on Time: 4 us

The fast turn-on time of 4 microseconds ensures quick and precise switching of MOSFETs, enhancing overall system efficiency.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65mm enables high-density mounting on the PCB, making it suitable for compact designs.

Nominal Supply Voltage-1: 12 V

With a nominal supply voltage of 12V, this MOSFET gate driver provides sufficient power for driving MOSFETs in various applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based interface IC type enhances compatibility with different MOSFET configurations, offering flexibility and versatility in circuit design.

Turn-off Time: 3.5 us

The fast turn-off time of 3.5 microseconds ensures quick switching off of MOSFETs, reducing power loss and improving efficiency in the system.

Technical Specifications

MOSFET Gate Drivers TPIC44L01DBRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP24,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

8 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

3.5 us

Turn-on Time:

4 us

Width:

5.3 mm

Trade Compliance

TPIC44L01DBRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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