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TPIC44L02DBG4

Texas Instruments

TPIC44L02DBG4 by Texas Instruments

TPIC44L02DBG4 by Texas Instruments is a MOSFET Gate Driver with 24 terminals, operating voltage range of 4.5V to 24V, and peak output current of 0.0012A. Ideal for automotive applications due to its small outline package and dual terminal position design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,271 parts In-Stock

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Digiode

USA . 1,690 parts In-Stock

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1,690

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Distributors (Availability)

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Parana Technologies

USA . 1,711 parts In-Stock

1+ parts

$2.448

100+ parts

-

1k+ parts

$2.940

10k+ parts

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1,711

$2.448

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$2.940

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DigiPath Technology Company

USA . 874 parts In-Stock

1+ parts

$2.695

100+ parts

$2.479

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874

$2.695

$2.479

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ChromeModa Solutions

Germany . 2,195 parts In-Stock

1+ parts

$2.750

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$2.255

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2,195

$2.750

$2.255

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IDEA Electronic Components Group

UK . 134 parts In-Stock

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$2.750

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$2.475

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134

$2.750

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$2.475

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AZTECH Wire

Italy . 335 parts In-Stock

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$19.692

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335

$19.692

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Ampacity Inc.

Singapore . 454 parts In-Stock

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$42.500

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454

$42.500

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One Stop Electronics

USA . 1,217 parts In-Stock

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$47.500

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1,217

$47.500

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Component Stockers USA

USA . 597 parts In-Stock

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$99.990

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$99.990

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Microchip USA

USA . 2,557 parts In-Stock

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2,557

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Corphita

USA . 586 parts In-Stock

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586

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Overview

Discover the TPIC44L02DBG4 by Texas Instruments, a top-of-the-line MOSFET Gate Driver designed for high-performance applications. With Texas Instruments' reputation for quality and reliability, this product offers exceptional value to customers seeking precision and efficiency. Ideal for automotive and industrial use, this compact device features a small outline package and dual terminals for easy installation. Experience seamless operation with fast turn-on and turn-off times, ensuring optimal performance even in extreme temperatures. Upgrade your project today with the TPIC44L02DBG4 and elevate your design to new heights of excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the product lightweight and durable, ideal for applications where weight and reliability are important factors.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Operates efficiently with a maximum supply voltage of 5.5V, making it suitable for low power applications.

Minimum Supply Voltage: 4.5 V

The ability to operate at low supply voltages of 4.5V ensures compatibility with a wide range of systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures up to 125°C, making it suitable for automotive and industrial applications where heat resistance is crucial.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable performance and longevity.

Nominal Output Peak Current Limit: 0.0012 A

The nominal output peak current limit of 0.0012A ensures safe operation and protection of the MOSFET, increasing the lifespan of the device.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter based interface IC type provides flexibility in driving MOSFETs, allowing for customizable and efficient control over the switching of the transistors.

Technical Specifications

MOSFET Gate Drivers TPIC44L02DBG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.0012 A

Nominal Output Peak Current Limit:

.0012 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP28,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

4.2 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

24 V

Minimum Supply Voltage-1:

8 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

3.5 us

Turn-on Time:

4 us

Width:

5.3 mm

Trade Compliance

TPIC44L02DBG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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